Molecular clusters as building blocks for nanoelectronics: the first demonstration of a cluster single-electron tunnelling transistor at room temperatureGUBIN, S. P; GULAYEV, Yu V; KHOMUTOV, G. B et al.Nanotechnology (Bristol. Print). 2002, Vol 13, Num 2, pp 185-194, issn 0957-4484Article

Microwave induced co-tunneling in single electron tunneling transistorsEJRNAES, M; SAVOLAINEN, M. T; MANSCHER, M et al.Physica. C. Superconductivity and its applications. 2002, Vol 372-76, pp 1353-1355, 3Conference Paper

Resonant tunneling permeable base transistor based pulsed oscillatorLIND, Erik; LINDSTRÖM, Peter; NAUEN, André et al.DRC : Device research conference. 2004, pp 129-130, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Hétérostructures double barrière pour la réalisation de diodes et de transistors à effet tunnel résonnant = Double barrier heterostructures for resonant tunneling in two- and -three terminal configurationMounaix, Patrick; Lippens, Didier.1992, 230 p.Thesis

LATERAL MIS TUNNEL TRANSISTORRUZYLLO J.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 10; PP. 197-199; BIBL. 6 REF.Article

The spin-valve transistor: a review and outlookJANSEN, R.Journal of physics. D, Applied physics (Print). 2003, Vol 36, Num 19, pp R289-R308, issn 0022-3727Article

A metal/oxide tunnelling transistorSNOW, E. S; CAMPBELL, P. M; RENDELL, R. W et al.Semiconductor science and technology. 1998, Vol 13, Num 8A, pp A75-A78, issn 0268-1242Conference Paper

Transport spectroscopy in single-electron tunneling transistors : Ordered molecular and nanoscale electronicsHAUG, R. J; WEIS, J; BLICK, R. H et al.Nanotechnology (Bristol. Print). 1996, Vol 7, Num 4, pp 381-384, issn 0957-4484Article

Very wide current-regime operation of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)CHENG, Shiou-Ying.Microelectronics and reliability. 2007, Vol 47, Num 8, pp 1208-1212, issn 0026-2714, 5 p.Article

Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistorVEXLER, M. I; TYAGINOV, S. E; SHULEKIN, A. F et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 50, pp 8057-8068, issn 0953-8984, 12 p.Article

High performance tunnel field-effect transistor by gate and source engineeringRU HUANG; QIANQIAN HUANG; SHAOWEN CHEN et al.Nanotechnology (Bristol. Print). 2014, Vol 25, Num 50, issn 0957-4484, 505201.1-505201.8Article

Device Performance of Heterojunction Tunneling Field-Effect Transistors Based on Transition Metal Dichalcogenide MonolayerLAM, Kai-Tak; XI CAO; JING GUO et al.IEEE electron device letters. 2013, Vol 34, Num 10, pp 1331-1333, issn 0741-3106, 3 p.Article

Direct Band-to-Band Tunneling in Reverse Biased MoS₂ Nanoribbon p-n JunctionsRAM KRISHNA GHOSH; MAHAPATRA, Santanu.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 274-279, issn 0018-9383, 6 p.Article

Study of Random Dopant Fluctuation Induced Variability in the Raised-Ge-Source TFETDAMRONGPLASIT, Nattapol; SUNG HWAN KIM; KING LIU, Tsu-Jae et al.IEEE electron device letters. 2013, Vol 34, Num 2, pp 184-186, issn 0741-3106, 3 p.Article

Asymmetric Tunnel Field-Effect Transistors as Frequency MultipliersMADAN, Himanshu; SARIPALLI, Vinay; HUICHU LIU et al.IEEE electron device letters. 2012, Vol 33, Num 11, pp 1547-1549, issn 0741-3106, 3 p.Article

Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V OperationLATTANZIO, Livio; DE MICHIELIS, Luca; IONESCU, Adrian M et al.IEEE electron device letters. 2012, Vol 33, Num 2, pp 167-169, issn 0741-3106, 3 p.Article

DC Compact Model for SOI Tunnel Field-Effect TransistorsBHUSHAN, Bharat; NAYAK, Kaushik; RAMGOPAL RAO, V et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 10, pp 2635-2642, issn 0018-9383, 8 p.Article

Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETsKAO, Kuo-Hsing; VERHULST, Anne S; VANDENBERGHE, William G et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 2, pp 292-301, issn 0018-9383, 10 p.Article

Doping, Tunnel Barriers, and Cold Carriers in InAs and InSb Nanowire Tunnel TransistorsSARWAT SYLVIA, Somaia; ABUL KHAYER, M; ALAM, Khairul et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 11, pp 2996-3001, issn 0018-9383, 6 p.Article

Material Selection for Minimizing Direct Tunneling in Nanowire TransistorsSARWAT SYLVIA, Somaia; PARK, Hong-Hyun; ABUL KHAYER, M et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 8, pp 2064-2069, issn 0018-9383, 6 p.Article

On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FETLATTANZIO, Livio; DAGTEKIN, Nilay; DE MICHIELIS, Luca et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 11, pp 2932-2938, issn 0018-9383, 7 p.Article

Scaling Length Theory of Double-Gate Interband Tunnel Field-Effect TransistorsLU LIU; MOHATA, Dheeraj; DATTA, Suman et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 4, pp 902-908, issn 0018-9383, 7 p.Article

Understanding the Superlinear Onset of Tunnel-FET Output CharacteristicDE MICHIELIS, Luca; LATTANZIO, Livio; IONESCU, Adrian M et al.IEEE electron device letters. 2012, Vol 33, Num 11, pp 1523-1525, issn 0741-3106, 3 p.Article

Impact of Quantum Confinement on Gate Threshold Voltage and Subthreshold Swings in Double-Gate Tunnel FETsPADILLA, José L; GAMIZ, Francisco; GODOY, Andrés et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 12, pp 3205-3211, issn 0018-9383, 7 p.Article

The electron―hole bilayer tunnel FETLATTANZIO, Livio; DE MICHIELIS, Luca; IONESCU, Adrian M et al.Solid-state electronics. 2012, Vol 74, pp 85-90, issn 0038-1101, 6 p.Article