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Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structureCHEN, Chun-Yuan; CHENG, Shiou-Ying; CHIOU, Wen-Hui et al.Semiconductor science and technology. 2004, Vol 19, Num 7, pp 864-869, issn 0268-1242, 6 p.Article

An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer : Special section containing articles on galium nitride and related materialsSHEALY, J. R; KAPER, V; TILAK, V et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 13, pp 3499-3509, issn 0953-8984Article

Excimer laser crystallized poly-Si TFTs and their applicationsDHARAM PAL GOSAIN; NOGUCHI, T; MACHIDA, A et al.SPIE proceedings series. 2000, pp 1313-1320, isbn 0-8194-3601-1Conference Paper

Hot electron and radiation induced degradation : Interaction in near micron MOS transistorANDHARE, P. N; NAHAR, R. K; WADHAWAN, O. P et al.SPIE proceedings series. 2000, pp 333-336, isbn 0-8194-3601-1Conference Paper

High voltage insulated gate bipolar transistor (IGBT) : Design and analysisKUMAR, A; KHANNA, V. K; SOOD, S. C et al.SPIE proceedings series. 2000, pp 853-856, isbn 0-8194-3601-1Conference Paper

VLSI-compatible processing and low-voltage operation of multiemitter Si/SiGe heterojunction bipolar transistorsZASLAVSKY, A; MASTRAPASQUA, M; KING, C. A et al.International journal of high speed electronics and systems. 2000, Vol 10, Num 1, pp 75-81Conference Paper

Dynamic formation of a parasitic barrier to electron flow in SiGe HBTs operating at high current densitiesROENKER, K. P; MUSHINI, P.Microelectronics journal. 2000, Vol 31, Num 5, pp 353-358, issn 0959-8324Article

High-frequency heterojunction bipolar transistor device design and technologyHOUSTON, P. A.Electronics & communication engineering journal. 2000, Vol 12, Num 5, pp 220-228, issn 0954-0695Article

Numerical investigation of the effects of graded layer on the performance of AlGaAs/GaAs heterojunction bipolar transistorsDEBBAR, N; AL-HOKAIL, H.International journal of electronics. 2000, Vol 87, Num 10, pp 1153-1162, issn 0020-7217Article

Negatron in frequency-converter modeFILINYUK, N. A; MOLCHANOV, P. A; VOITSEKHOVSKAYA, E. V et al.Radio and communications technology. 1999, Vol 4, Num 12, pp 66-71, issn 1087-7126Article

Base currents on Si/SiGe/Si HBT in dependence on the processing conditionsKNOLL, D; FISCHER, G; EHWALD, K. E et al.Applied surface science. 1996, Vol 102, pp 247-251, issn 0169-4332Conference Paper

An integral Gummel relation for single and double heterojunction graded-base HBTsYUAN, J. S.Physica status solidi. A. Applied research. 1995, Vol 147, Num 2, pp 643-650, issn 0031-8965Article

Degradation and recovery in electron-irradiated MOSFETs and operational amplifiersOHYAMA, H; HAYAMA, K.Physica status solidi. A. Applied research. 1995, Vol 151, Num 2, pp 489-499, issn 0031-8965Article

Cryogenic and high temperature operation of Al0.52In0.48P/In0.2Ga0.8As high electron mobility transistorsKUO, J. M; CHAN, Y. J.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 976-978, issn 1071-1023Conference Paper

Adjustable high-speed insulated gate bipolar transistorFEI ZHANG; LINA SHI; CHENGFANG LI et al.IEEE transactions on plasma science. 2006, Vol 34, Num 3, pp 1021-1025, issn 0093-3813, 5 p., 3Article

Comprehensive study of InGaP/AlxGa1-xAs/GaAs heterojunction bipolar transistors with different doping concentrations of AlxGa1-xAs graded layersCHENG, Shiou-Ying; CHEN, Jing-Yuh; CHEN, Chun-Yuan et al.Semiconductor science and technology. 2004, Vol 19, Num 3, pp 351-358, issn 0268-1242, 8 p.Article

Evolution of nanocrystalline silicon thin film transistor channel layersCHENG, I-Chun; ALLEN, Steven; WAGNER, Sigurd et al.Journal of non-crystalline solids. 2004, Vol 338-40, pp 720-724, issn 0022-3093, 5 p.Conference Paper

Temperature dependence of electron ionization coefficients of InGaP measured in InGaP/GaAs/InGaP DHBt'sNEO, Wah-Peng; HONG WANG; RADHAKRISHNAN, K et al.Journal of crystal growth. 2004, Vol 268, Num 3-4, pp 406-409, issn 0022-0248, 4 p.Conference Paper

Comprehensive study of an InGaP/AlGaAs/GaAs heterojunction bipolar transistor with a continuous conduction-band structureCHENG, Shiou-Ying.Semiconductor science and technology. 2002, Vol 17, Num 7, pp 701-707, issn 0268-1242Article

Theoretical investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor with a wide-gap collectorCHENG, Shiou-Ying.Semiconductor science and technology. 2002, Vol 17, Num 5, pp 405-413, issn 0268-1242Article

Heterojunction bipolar transistors implemented with GaInNAs materialsASBECK, P. M; WELTY, R. J; TU, C. W et al.Semiconductor science and technology. 2002, Vol 17, Num 8, pp 898-906, issn 0268-1242Article

Design and realization of high performance CMOS compatible Lateral bipolar transistors (CLBTs)RAVI KUMAR, N; SANKAR, G. K; ROY, J. N et al.SPIE proceedings series. 2000, pp 430-433, isbn 0-8194-3601-1Conference Paper

Frequency dependence of accumulation capacitance of MOS structure with ultrathin oxide layerBHAT, V. K; BHAT, K. N; SUBRAHMANYAM, A et al.SPIE proceedings series. 2000, pp 341-344, isbn 0-8194-3601-1Conference Paper

Low-frequency noise in AlInAs/InGaAs/InP MBE- and MOCVD-grown HFETsSAKALAS, P; NAWAZ, M; ZIRATH, H et al.Semiconductor science and technology. 2000, Vol 15, Num 8, pp 799-805, issn 0268-1242Article

High-performance Si/SiGe heterojunction bipolar transistors grown by molecular-beam epitaxyGRUHLE, A.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 1186-1189, issn 1071-1023Conference Paper

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