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Pressure induced semiconducting to metallic transition in TeSINGH, D. B; VARANDANI, D; HUSAIN, M et al.SPIE proceedings series. 1998, pp 1263-1266, isbn 0-8194-2756-X, 2VolConference Paper

Electronic structure and metallization of siliconBISWAS, R; KERTESZ, M.Physical review. B, Condensed matter. 1984, Vol 29, Num 4, pp 1791-1797, issn 0163-1829Article

Pressure-induced first-order transition in layered crystalline semiconductor GeSe to a metallic phaseBHATIA, K. L; PARTHASARATHY, G; GOSAIN, D. P et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 2, pp 1492-1494, issn 0163-1829Article

Dynamique sans collision de la transition semiconducteur-métal hors d'équilibreKOPAEV, YU. V; MENYAJLENKO, V. V; MOLOTKOV, S. N et al.ZETF. Pis′ma v redakciû. 1985, Vol 89, Num 4, pp 1404-1415, issn 0044-4510Article

Semi-conductor to metal transition in liquid selenium at high pressure and high temperatureSOLDO, Y; HAZEMANN, J. L; ABERDAM, D et al.Journal de physique. IV. 1997, Vol 7, Num 2, pp C2.983-C2.985, issn 1155-4339, 2Conference Paper

A first-principles pseudopotential model for the strong intrasite interaction applied to the 4f13 configuration (Yb2O3)LOPEZ-AGUILAR, F; COSTA-QUINTANA, J.Physica status solidi. B. Basic research. 1984, Vol 123, Num 1, pp 219-228, issn 0370-1972Article

The photoinduced Mott transition from metal to insulator: the problem of critical concentrationPERGAMENT, Alexander; KAZAKOVA, Elena; MORAK, Andreas et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 7, pp 1151-1156, issn 0953-8984, 6 p.Article

Transverse-field and defect-azimuth effects in achiral carbon nanotubesZHU, Jia-Lin; SONG, Hai-Feng; XIAO HU et al.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 29, pp 4629-4636, issn 0953-8984, 8 p.Article

Study of the metal-semiconductor transition in Rb2Mo6Se6,Rb2Mo6Te6 and Cs2Mo6Te6 under pressuresHOR, P. H; FAN, W. C; CHOU, L. S et al.Solid state communications. 1985, Vol 55, Num 3, pp 231-235, issn 0038-1098Article

Transformations électroniques dans des semiconducteurs presque magnétiquesVOLKOV, A. G; POVZNER, A. A; GEL'D, P. V et al.Fizika tverdogo tela. 1984, Vol 26, Num 6, pp 1675-1677, issn 0367-3294Article

Variation du caractère du contact CdSe-VO2 lors de la transition de phase métal-semiconducteurKUZNETSOV, V. A; LANSKAYA, T. G; MATASOVA, L. P et al.Žurnal tehničeskoj fiziki. 1983, Vol 53, Num 8, pp 1616-1618, issn 0044-4642Article

Nanoscale study of conduction through carbon nanotube networksSTADERMANN, M; PAPADAKIS, S. J; WASHBURN, S et al.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 20, pp 201402.1-201402.3, issn 1098-0121Article

HALL EFFECT IN VO2 NEAR THE SEMICONDUCTOR-TO-METAL TRANSITIONROSEVEAR WH; PAUL W.1973; PHYS. REV., B; U.S.A.; DA. 1973; VOL. 7; NO 5; PP. 2109-2111; BIBL. 13 REF.Serial Issue

Enhancement of superconductivity near the pressure-induced semiconductor-metal transition in the BiS2-based superconductors LnO0.5F0.5BiS2 (Ln = La, Ce, Pr, Nd)WOLOWIEC, C. T; WHITE, B. D; JEON, I et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 42, issn 0953-8984, 422201.1-422201.6Article

Investigation of fast processes in condensed matter by time-resolved x-ray diffraction : Ultra X-ray Science: Probing Transient Structures in Condensed MatterUSCHMANN, I; KAMPFER, T; ZAMPONI, F et al.Applied physics. A, Materials science & processing (Print). 2009, Vol 96, Num 1, pp 91-98, issn 0947-8396, 8 p.Article

Investigations of electronic structure of capped carbon nanotubes by scanning tunneling spectroscopyKLUSEK, Z; KOWALCZYK, P; BYSZEWSKI, P et al.Vacuum. 2001, Vol 63, Num 1-2, pp 145-150, issn 0042-207XArticle

Reflectance spectra and electrical resistivity of (Me2-DCNQI)2Li1-xCuxYAMAMOTO, T; TAJIMA, H; YAMAURA, J.-I et al.Journal of the Physical Society of Japan. 1999, Vol 68, Num 4, pp 1384-1391, issn 0031-9015Article

A pseudobinary model of the semiconductor-metal transition in vitrifying meltsFUNTIKOV, V. A.Glass physics and chemistry. 1998, Vol 24, Num 5, pp 427-431, issn 1087-6596Conference Paper

Raman study of black phosphorus up to 13 GPaAKAHAMA, Y; KOBAYASHI, M; KAWAMURA, H et al.Solid state communications. 1997, Vol 104, Num 6, pp 311-315, issn 0038-1098Article

Low-frequency noise in gallium-arsenide schottky-barrier diodes with a nonuniform metal-semiconductor contactMALAKHOVSKIY, O. Y; BOZHKOV, V. G; BYCHKOV, A. G et al.Soviet journal of communications technology & electronics. 1992, Vol 37, Num 12, pp 41-47, issn 8756-6648Article

Polarized reflectance spectrum of β-(BEDT-TTF)2PF6TAJIMA, H; YAKUSHI, K; KURODA, H et al.Solid state communications. 1985, Vol 56, Num 3, pp 251-254, issn 0038-1098Article

The effect of pressure on the semiconductor-to-metal transition temperature in tin and in dilute Sn-Ge alloysVNUK, F; DE MONTE, A; SMITH, R. W et al.Journal of applied physics. 1984, Vol 55, Num 12, pp 4171-4176, issn 0021-8979Article

Metal-nonmetal transition and superconductivity in frozen tin-hydrogen films = Transition métal-non métal et supraconductivité dans les couches minces étain-hydrogène gelésLUDWIG, R; MICKLITZ, H.Solid state communications. 1983, Vol 47, Num 10, pp 851-854, issn 0038-1098Article

S-p hybridization effects on the metal- nonmetal phase transition in expanded liquid mercuryLINKE, R; MORAN-LOPEZ, J. L; BENNEMANN, K. H et al.Physical review. B, Condensed matter. 1983, Vol 27, Num 12, pp 7348-7352, issn 0163-1829Article

Surface and bulk phenomena in the process of hydride formation in thin films of rare earth metals: Comparison between terbium and europiumKNOR, M; NOWAKOWSKI, R; DUS, R et al.Applied surface science. 2011, Vol 257, Num 19, pp 8241-8245, issn 0169-4332, 5 p.Conference Paper

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