Assessment of 3D for future on-chip wiring and novel system solutionsENGELHARDT, M.Proceedings - Electrochemical Society. 2004, pp 250-260, issn 0161-6374, isbn 1-56677-417-9, 11 p.Conference Paper

SOI CMOS circuits for System-on-Chip (SoC) applicationKIM, Jonghae; PLOUCHART, Jean-Olivier; GROSS, B. Jeffrey et al.Proceedings - Electrochemical Society. 2004, pp 292-311, issn 0161-6374, isbn 1-56677-417-9, 20 p.Conference Paper

Advanced process modules for scaled ULSIsMOGAMI, Tohru.Proceedings - Electrochemical Society. 2004, pp 32-41, issn 0161-6374, isbn 1-56677-417-9, 10 p.Conference Paper

Gate dielectric impact for the 65nm digital and mixed signal platform applicationsTAVEL, Brice.Proceedings - Electrochemical Society. 2004, pp 47-59, issn 0161-6374, isbn 1-56677-417-9, 13 p.Conference Paper

Domain matching epitaxy: A new paradigm for epitaxial growth of oxidesNARAYAN, J.Proceedings - Electrochemical Society. 2004, pp 103-114, issn 0161-6374, isbn 1-56677-417-9, 12 p.Conference Paper

Dielectric scaling challenges and approaches in floating gate non-volatile memoriesKEENEY, Stephen N.Proceedings - Electrochemical Society. 2004, pp 151-158, issn 0161-6374, isbn 1-56677-417-9, 8 p.Conference Paper

Dielectrics for nanosystems : materials science, processing, reliability, and manufacturing (Honolulu HI, 3-8 October 2004)Singh, R; Iwai, H; Tummala, R.R et al.Proceedings - Electrochemical Society. 2004, issn 0161-6374, isbn 1-56677-417-9, X, 490 p, isbn 1-56677-417-9Conference Proceedings

Hydrogen/deuterium implantation for SI-dielectric interface in nanoscale devicesKUNDU, T; MISRA, D.Proceedings - Electrochemical Society. 2004, pp 346-355, issn 0161-6374, isbn 1-56677-417-9, 10 p.Conference Paper

A study of aluminum gate La₂O₃ nmisfet with Post Metallization AnnealNG, Jin-Aun; OHMI, Shun-Ichiro; TSUTSUI, Kazuo et al.Proceedings - Electrochemical Society. 2004, pp 369-380, issn 0161-6374, isbn 1-56677-417-9, 12 p.Conference Paper

Microstructure evolution and breakdown mechanism studies in MOSFET with ultra thin gate dielectrics in nanometer technology eraCHIH YUAN LU; CHIH HANG TUNG; KIN LEONG PEY et al.Proceedings - Electrochemical Society. 2004, pp 404-417, issn 0161-6374, isbn 1-56677-417-9, 14 p.Conference Paper

Effects of low tempersture NH3 treatment on HfO2/SiO2 stack gate dielectrics fabricated by MOCVD systemLU, Wen-Tai; CHIEN, Chao-Hsin; LIN, Ying-Chang et al.Proceedings - Electrochemical Society. 2004, pp 434-442, issn 0161-6374, isbn 1-56677-417-9, 9 p.Conference Paper

Plasma activated wafer bonding for thin silicon-on-insulator substrate fabricationLINDNER, Paul; FARRENS, Shari; DRAGOI, Viorel et al.Proceedings - Electrochemical Society. 2004, pp 97-102, issn 0161-6374, isbn 1-56677-417-9, 6 p.Conference Paper

Ultra-high-speed and low-power SOI CMOS technology with body-tied hybrid trench isolation structureHIRANO, Yuuichi; IPPOSHI, Takashi; HAI THAI, Dang et al.Proceedings - Electrochemical Society. 2004, pp 60-64, issn 0161-6374, isbn 1-56677-417-9, 5 p.Conference Paper

Nanoscale packaging and nano-bio electronic systemsTUMMALA, Rao; MARKONDEYA RAJ, P; WANG, Zhong L et al.Proceedings - Electrochemical Society. 2004, pp 1-15, issn 0161-6374, isbn 1-56677-417-9, 15 p.Conference Paper

Double-gate FINFET innovation: From 3-terminal to flexible threshold voltage 4-terminalYONGXUN LIU; MASAHARA, Meishoku; ISHII, Kenlchi et al.Proceedings - Electrochemical Society. 2004, pp 74-85, issn 0161-6374, isbn 1-56677-417-9, 12 p.Conference Paper

Dielectrics in SI nano-devices: Roles and challengesQI XIANG; KRIVOKAPIC, Zoran; MASZARA, Witek et al.Proceedings - Electrochemical Society. 2004, pp 86-96, issn 0161-6374, isbn 1-56677-417-9, 11 p.Conference Paper

Deposition conditions and post deposition treatment of Pr and La Oxide gate dielectrics: Effect on interface, leakage, and Si contentLIPPERT, G; DABROWSKI, J; FORMANEK, P et al.Proceedings - Electrochemical Society. 2004, pp 115-122, issn 0161-6374, isbn 1-56677-417-9, 8 p.Conference Paper

Novel dielectric structures for optical performance enhancement in deep sub-micron CMOS image sensorYAUNG, Dun-Nian; WUU, Shou-Gwo; CHIEN, Ho-Ching et al.Proceedings - Electrochemical Society. 2004, pp 135-150, issn 0161-6374, isbn 1-56677-417-9, 16 p.Conference Paper

High-K materials for tunnel barrier engineering in future memory technologiesBLOMME, Pieter; GOVOREANU, Bogdan; ROSMEULEN, Maarten et al.Proceedings - Electrochemical Society. 2004, pp 169-182, issn 0161-6374, isbn 1-56677-417-9, 14 p.Conference Paper

Low-K dielectrics for DRAM frontend-of-line and mid-of-lineBIRNER, A; KLIPP, A; MÜMMLER, K et al.Proceedings - Electrochemical Society. 2004, pp 183-194, issn 0161-6374, isbn 1-56677-417-9, 12 p.Conference Paper

All-printed flexible organic thin film transistors: Current status and outlook for the futureSUBRAMANIAN, V; FRECHET, J. M. J; VOLKMAN, S. K et al.Proceedings - Electrochemical Society. 2004, pp 123-127, issn 0161-6374, isbn 1-56677-417-9, 5 p.Conference Paper

High-density 3-D microsystem-in-package technology and its application for integrated CCD micro-camera visual inspection systemYAMADA, Hiroshi; TOGASAKI, Takashi; SADAMOTO, Atsushi et al.Proceedings - Electrochemical Society. 2004, pp 277-291, issn 0161-6374, isbn 1-56677-417-9, 15 p.Conference Paper

HfSiON gate dielectrics for low-stand-by power CMOS devicesSEKINE, Katsuyuki; INUMIYA, Seiji; KANEKO, Akio et al.Proceedings - Electrochemical Society. 2004, pp 324-330, issn 0161-6374, isbn 1-56677-417-9, 7 p.Conference Paper

Manufacturing solutions for developing processes and tools for CVD/ALD of dielectrics for nanoelectronicsSINGH, R; DAMJANOVIC, D; BOLLA, H et al.Proceedings - Electrochemical Society. 2004, pp 356-361, issn 0161-6374, isbn 1-56677-417-9, 6 p.Conference Paper

Effects of nitrogen in HFO₂ gate dielectric on the electrical and reliability characteristics by N₂ plasmaKIM, Jeon-Ho; CHOI, Kyu-Jeong; YOON, Soon-Gil et al.Proceedings - Electrochemical Society. 2004, pp 464-469, issn 0161-6374, isbn 1-56677-417-9, 6 p.Conference Paper