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kw.\*:("Tungsten Selenides")

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The high-efficiency (17.1%) WSe2 photo-electrochemical solar cellPRASAD, G; SRIVASTAVA, O. N.Journal of physics. D, Applied physics (Print). 1988, Vol 21, Num 6, pp 1028-1030, issn 0022-3727Article

Synthesis and characterization of inorganic fullerene-like WSe2 materialTSIRLINA, T; FELDMAN, Y; HOMYONFER, M et al.Fullerene science and technology. 1998, Vol 6, Num 1, pp 157-165, issn 1064-122XArticle

STRUCTURE DES PHASES INTERMEDIAIRES DES SYSTEMES QUASI-BINAIRES DE DICHALCOGENURES DE W, MO, NB, TAKALIKHMAN VL.1982; KRISTALLOGRAFIJA; ISSN 0023-4761; SUN; DA. 1982; VOL. 27; NO 2; PP. 385; BIBL. 2 REF.Article

INHIBITION HETEROGENE DES PROCESSUS D'OXYDATION DES HYDROCARBURES PAR LE SELENIURE DE TUNGSTENESMIRNOVA AL; TAVADYAN LA; BLYUMBERG EH A et al.1982; KINET. KATAL.; ISSN 0453-8811; SUN; DA. 1982; VOL. 23; NO 3; PP. 563-567; BIBL. 7 REF.Article

PN JUNCTIONS IN TUNGSTEN DISELENIDESPAEH R; ELROD U; LUX STEINER M et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 43; NO 1; PP. 79-81; BIBL. 15 REF.Article

n-MoSe2/p-WSe2 heterojunctionsSPÄH, R; LUX-STEINER, M; OBERGFELL, M et al.Applied physics letters. 1985, Vol 47, Num 8, pp 871-873, issn 0003-6951Article

EXAFS studies of amorphous molybdenum and tungsten trisulfides and triselenidesCRAMER, S. P; LIANG, K. S; JACOBSON, A. J et al.Inorganic chemistry (Print). 1984, Vol 23, Num 9, pp 1215-1221, issn 0020-1669Article

Improvement in photocurrent with n-type niobium- and rhenium-doped molybdenum and tungsten diselenide single crystalsLEGMA, J. B; VACQUIER, G; TRAORE, H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1991, Vol 8, Num 3, pp 167-174Article

Polycrystalline p-WSe2 photoelectrochemical solar cells. I: Dark electrochemical behaviorSTOICOVICIU, L; CANDEA, R. M.Solar energy materials. 1984, Vol 11, Num 1-2, pp 75-83, issn 0165-1633Article

Elaboration, caractérisation et étude photoélectrochimique de sélénure de tungstène monocristallin et en couches mincesAzaiez Choukou, Chiraz; Claverie, Jean.1988, 171 p.Thesis

Electrodeposited tungsten selenide films. II: Optical. electrical, electrochemical characterization and photoelectrochemical solar cell studiesCHANDRA, S; SAHU, S. N.Physica status solidi. A. Applied research. 1985, Vol 89, Num 1, pp 321-331, issn 0031-8965Article

A GaAs 1 K static RAM using tungsten silicide gate self-aligned technologyYOKOYAMA, N; OHNISHI, T; ONODERA, H et al.IEEE journal of solid-state circuits. 1983, Vol 18, Num 5, pp 520-524, issn 0018-9200Article

Molybdenum and tungsten diselenide from high temperature solutionsHOFMANN, W. K.Journal of crystal growth. 1986, Vol 76, Num 1, pp 93-99, issn 0022-0248Article

A synchrotron radiation study of the interaction of Na with WSe2 and TaSe2 : oxygen-induced deintercalationFOULIAS, S. D; VLACHOS, D. S; PAPAGEORGOPOULOS, C. A et al.Surface science. 1996, Vol 352-54, pp 463-467, issn 0039-6028Conference Paper

Nanoscale characterization of semiconductor surfaces by spatially resolved photocurrent measurementsHIESGEN, R; MEISSNER, D.Fresenius' journal of analytical chemistry. 1997, Vol 358, Num 1-2, pp 54-58, issn 0937-0633Conference Paper

A new process for optical data recording by photoelectrochemical etchingRYAN, M. A; LEVY-CLEMENT, C; MAHALU, D et al.Berichte der Bunsengesellschaft für Physikalische Chemie. 1990, Vol 94, Num 6, pp 671-676, issn 0005-9021, 6 p.Article

Electronic structure of MoSe2, MoS2 and WSe2. II: The nature of the optical band gapsCOEHOORN, R; HAAS, C; DE GROOT, R. A et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 12, pp 6203-6206, issn 0163-1829Article

Composite materials for photovoltaics: A realistic aim?KIESEWETTER, T; TOMM, Y; TURRION, M et al.Solar energy materials and solar cells. 1999, Vol 59, Num 4, pp 309-323, issn 0927-0248Article

H2O adsorption on the layered chalcogenide semiconductors WSe2, InSe and GaSeMAYER, T; KLEIN, A; LANG, O et al.Surface science. 1992, Vol 269-270, pp 909-914, issn 0039-6028, bConference Paper

Discrimination of atoms on the surface of a two-dimensional solid solution with scanning tunneling microscopyPARKINSON, B. A.Journal of the American Chemical Society. 1990, Vol 112, Num 3, pp 1030-1033, issn 0002-7863Article

Structural and photoelectrochemical studies of In2O3-TiO2 and WSe2 photoelectrodes for photoelectrochemical production of hydrogenPRASAD, G; CHANDRA BABU, K. S; SRIVASTAVA, O. N et al.International journal of hydrogen energy. 1989, Vol 14, Num 8, pp 537-544, issn 0360-3199Article

A 22% efficient semiconductor/liquid junction solar cell. The photoelectrochemical behavior of n-WSe2 electrodes in the presence of I2/I in aqueous electrolyteCAMPET, G; AZAIEZ, C; LEVY, F et al.Active and passive electronic components. 1988, Vol 13, Num 1, pp 33-43, issn 0882-7516Article

The effect of ohmic contacts on the electrochemical behavior of illuminated n-WSe2 and n-MoSe2ETMAN, M.Journal of the Electrochemical Society. 1988, Vol 135, Num 5, pp 1115-1118, issn 0013-4651Article

Crystal structures of tungsten disulfide and diselenideSCHUTTE, W. J; DE BOER, J. L; JELLINEK, F et al.Journal of solid state chemistry (Print). 1987, Vol 70, Num 2, pp 207-209, issn 0022-4596Article

Fundamental absorption edges and indirect band gaps in W1-xMoxSe2(0≤x≤1)KAM-KEUNG KAM; CHI-LAN CHANG; LYNCH, D. W et al.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 22, pp 4031-4040, issn 0022-3719Article

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