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Results 1 to 25 of 4508

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Comment on: Effects of the localized state inside the barrier on resonant tunneling in double-barrier quantum wellsXU, H. Z; SHI, Z.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 23, pp 237201.1-237201.4, issn 1098-0121Article

Coherent oscillations of electrons in tunnel-coupled wells under ultrafast intersubband excitationHERNANDEZ-CABRERA, A; ACEITUNO, P; VASKO, F. T et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 29, pp 5327-5338, issn 0953-8984, 12 p.Article

Differential conductance switching of Planar tunnel junctions mediated by oxidation/reduction of functionally protected ferroceneDINGLASAN, Jose A. M; BAILEY, Michael; PARK, Jong B et al.Journal of the American Chemical Society. 2004, Vol 126, Num 20, pp 6491-6497, issn 0002-7863, 7 p.Article

Tunnel barrier height oscillations at the solid/liquid interfaceHUGELMANN, Martin; SCHINDLER, Werner.Surface science. 2003, Vol 541, Num 1-3, pp L643-L648, issn 0039-6028Article

Resonant tunnelling in Dy- or Gd-doped Al2O3 magnetic tunnel junctionsDE GROOT, C. H; OUYANG, Y; KOO, Sang-Mo et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 20, pp 5153-5159, issn 0953-8984Article

The asymmetry of the tunneling time in type II semiconductor heterostructuresBARBU, M; DRAGOMAN, D.Optical and quantum electronics. 2002, Vol 34, Num 11, pp 1097-1109, issn 0306-8919, 13 p.Article

Tunnel current on a quantum wedgeSHENG, Zheng-Mao; CHEN, Xing-Wei.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 18, pp L349-L354, issn 0953-8984Article

A traversal time for tunneling particles through a potential barrierLI, Chun-Fang; QI WANG.Physica. B, Condensed matter. 2001, Vol 296, Num 4, pp 356-360, issn 0921-4526Article

Irradiation-induced electron tunnelling and small-polaron hopping in single-crystalline YIGWALZ, F; BRABERS, J. H. V. J; TORRES, L et al.Physica status solidi. B. Basic research. 2001, Vol 228, Num 3, pp 717-730, issn 0370-1972Article

The effect of magnetic atom substitution on the tunneling conductance in skutterudite CoSb3 semiconductorsNAGAO, J; EBINUMA, T; UCHIDA, T et al.Physica status solidi. B. Basic research. 2001, Vol 228, Num 3, pp 705-709, issn 0370-1972Article

A study on tunneling magnetoresistance in magnetic tunnel junctions oxidized by ozonePARK, Byongguk; TAEK DONG LEE.Journal of magnetism and magnetic materials. 2001, Vol 226-30, pp 926-929, issn 0304-8853, 1Conference Paper

The nature of the low-temperature minimum of resistivity in ceramic manganitesAUSLENDER, M. I; ROZENBERG, E; KAR'KIN, A. E et al.Journal of alloys and compounds. 2001, Vol 326, Num 1-2, pp 81-84, issn 0925-8388Conference Paper

Voltage dependence of giant tunnel magnetoresistance in triple barrier magnetic systemsVEDYAYEV, A; RYZHANOVA, N; VLUTTERS, R et al.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 8, pp 1797-1804, issn 0953-8984Article

Spin-dependent delay time in electronic resonant tunneling at zero magnetic fieldVOSKOBOYNIKOV, O; LIU, S. S; LEE, C. P et al.Solid state communications. 2000, Vol 115, Num 9, pp 477-481, issn 0038-1098Article

A CrO2-based magnetic tunnel junctionBARRY, A; COEY, J. M. D; VIRET, M et al.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 8, pp L173-L175, issn 0953-8984Article

Out-of-plane conductivity for quantum wells in a parallel magnetic fieldGUMBS, G.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 8, pp 1789-1796, issn 0953-8984Article

Cluster transfer matrix method for the single electron boxCHUNG, S. G.Journal of the Physical Society of Japan. 1999, Vol 68, Num 5, pp 1778-1779, issn 0031-9015Article

Interband resonant magnetotunnelling in semiconductor heterostructuresZAKHAROVA, A.Journal of physics. Condensed matter (Print). 1999, Vol 11, Num 24, pp 4675-4688, issn 0953-8984Article

Resonant-tunnelling conductance of a finite-size amorphous sampleGRANOT, E.Journal of physics. Condensed matter (Print). 1999, Vol 11, Num 43, pp 8547-8553, issn 0953-8984Article

Transport properties in nano-scaled ferromagnetic tunnel junctions within a two-band tight-binding modelCAI, J. H; FAN, P. D; YANG, S. G et al.Solid state communications. 1999, Vol 112, Num 9, pp 527-530, issn 0038-1098Article

A theoretical resonant-tunnelling approach to electric-field effects in quasiperiodic Fibonacci GaAs-(Ga, Al)As semiconductor superlatticesREYES-GOMEZ, E; PERDOMO-LEIVA, C. A; OLIVEIRA, L. E et al.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 16, pp 3557-3567, issn 0953-8984Article

Interband tunnelling in semiconductor heterostructuresZAKHAROVA, A.Semiconductor science and technology. 1998, Vol 13, Num 6, pp 569-575, issn 0268-1242Article

Kondo effect in single quantum dot systems : Study with numerical renormalization group methodIZUMIDA, W; SAKAI, O; SHIMIZU, Y et al.Journal of the Physical Society of Japan. 1998, Vol 67, Num 7, pp 2444-2454, issn 0031-9015Article

Resonance splitting effect in semiconductor superlatticesGUO, Y; GU, B.-L; LI, Z.-Q et al.The European physical journal. B, Condensed matter physics. 1998, Vol 3, Num 2, pp 257-261, issn 1434-6028Article

Spin-bottleneck resistance in magnetic-tunnel-junction devicesJUNGWIRTH, T; MACDONALD, A. H.Solid state communications. 1998, Vol 108, Num 3, pp 127-131, issn 0038-1098Article

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