OXIDATION OF POROUS SILICON AND PROPERTIES OF ITS OXIDE FILMUNAGAMI T.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 2; PP. 231-241; BIBL. 12 REF.Article

Intrinsic stress in porous silicon layers formed by anodization in HF solutionUNAGAMI, T.Journal of the Electrochemical Society. 1997, Vol 144, Num 5, pp 1835-1838, issn 0013-4651Article

HIGH-VOLTAGE SILICON THIN FILM TRANSISTOR ON QUARTZUNAGAMI T; TSUJIYAMA B.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 6; PP. 167-168; BIBL. 10 REF.Article

STRUCTURE OF POROUS SILICON LAYER AND HEAT-TREATMENT EFFECTUNAGAMI T; SEKI M.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 8; PP. 1339-1344; BIBL. 12 REF.Article

Electrical conductance characteristics of single-crystal lead iodide grown in gelsUNAGAMI, T.Journal of the Electrochemical Society. 1999, Vol 146, Num 8, pp 3110-3113, issn 0013-4651Article

High-voltage poly-Si TFT's with multichannel structureUNAGAMI, T.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2363-2367, issn 0018-9383Article

High-voltage polycrystalline-silicon TFT for addressing electroluminescent devicesUNAGAMI, T; TSUJIYAMA, B.Proceedings of the society for information display. 1984, Vol 25, Num 2, pp 117-121, issn 0734-1768Article

High-voltage TFT fabricated in recrystallized polycrystalline siliconUNAGAMI, T; KOGURE, O.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 3, pp 314-319, issn 0018-9383Article

p-Channel TFT's using magnetron-sputtered Ta₂O₅ fils as gate insulatorsSEKI, S; UNAGAMI, T; STUJIYAMA, B et al.IEEE electron device letters. 1984, Vol 5, Num 6, pp 197-198, issn 0741-3106Article

Crystallographic orientation dependence of transition layer at magnetron-sputtered Ta₂O₅/Si interfaceSEKI, S; UNAGAMI, T; KOGURE, O et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 10, pp 2457-2459, issn 0013-4651Article

Effects of surface oxide on leakage current of magnetron-sputtered Ta₂O₅ on SiSEKI, S; UNAGAMI, T; KOGURE, O et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 12, pp 3054-3055, issn 0013-4651Article

Electrical characteristics of tantalum pentoxide-silicon dioxide-silicon structuresSEKI, S; UNAGAMI, T; TSUJIYAMA, B et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 1, pp 199-202, issn 0013-4651Article

Study on narrow-stripe polycrystalline silicon thin-films transistorsTAKESHITA, T; UNAGAMI, T; KOGURE, O et al.Japanese journal of applied physics. 1988, Vol 27, Num 10, pp 1937-1941, issn 0021-4922Article

Electrical characteristics of the RF magnetron-sputtered tantalum pentoxide-silicon interfaceSEKI, S; UNAGAMI, T; TSUJIYAMA, B et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 11, pp 2621-2625, issn 0013-4651Article

Electron trapping levels in rf-sputtered Ta₂O₅ filmsSEKI, S; UNAGAMI, T; TSUJIYAMA, B et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1983, Vol 1, Num 4, pp 1825-1830, issn 0734-211XArticle

Reactive ion etching of tantalum pentoxideSEKI, S; UNAGAMI, T; TSUJIYAMA, B et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 12, pp 2505-2506, issn 0013-4651Article