A three-transistor threshold voltage model for halo processesRIOS, Rafael; SHIH, Wei-Kai; SHAH, Atul et al.IEDm : international electron devices meeting. 2002, pp 113-116, isbn 0-7803-7462-2, 4 p.Conference Paper

Power consumption in reversible logic addressed by a ramp voltageDE VOS, Alexis; VAN RENTERGEM, Yvan.Lecture notes in computer science. 2005, pp 207-216, issn 0302-9743, isbn 3-540-29013-3, 10 p.Conference Paper

A study of aluminum gate La₂O₃ nmisfet with Post Metallization AnnealNG, Jin-Aun; OHMI, Shun-Ichiro; TSUTSUI, Kazuo et al.Proceedings - Electrochemical Society. 2004, pp 369-380, issn 0161-6374, isbn 1-56677-417-9, 12 p.Conference Paper

Threshold voltage model for short channel retrograde doped MOSFETsKRANTI, Abhinav; RASHMI; HALDAR, S et al.SPIE proceedings series. 2002, pp 672-676, isbn 0-8194-4500-2, 2VolConference Paper

Nanofabrication with a scanning tunneling microscopeYAU, S.-T; SALTZ, D; WRIEKAT, A et al.Journal of applied physics. 1991, Vol 69, Num 5, pp 2970-2974, issn 0021-8979Article

Extraction of MOSFET effective channel length and width based on the transconductance-to-current ratioCUNHA, A. I. A; SCHNEIDER, M. C; GALUP-MONTORO, C et al.Proceedings - Electrochemical Society. 2004, pp 33-38, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Unambiguous extraction of threshold voltage based on the ACM modelCUNHA, A. I. A; SCHNEIDER, M. C; GALUP-MONTORO, C et al.Proceedings - Electrochemical Society. 2004, pp 69-74, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Threshold voltage and director reorientation for in-plane switching of nematic liquid crystalsRESHETNYAK, V; SHEVCHUK, O.SPIE proceedings series. 2002, pp 20-27, isbn 0-8194-4398-0Conference Paper

Analysis of abnormal Pch Vt distribution in wafer caused by implantorNISHIMURA, K; MAEDA, T; INOUE, T et al.IEEE international symposium on semiconductor manufacturing conference. 1999, pp 341-344, isbn 0-7803-5403-6Conference Paper

On the extraction of the threshold voltage of MOSFETsORTIZ-CONDE, A; GOUVEIA FERNANDES, E; LIOU, J. J et al.International conference on microelectronic. 1997, pp 285-288, isbn 0-7803-3664-X, 2VolConference Paper

Comments on «accurate determination of threshold voltage levels of a Schmitt Trigger»LAUER, H.-U.IEEE transactions on circuits and systems. 1987, Vol 34, Num 10, pp 1252-1253, issn 0098-4094Article

A power-on-reset pulse generator referenced by threshold voltage without standby currentSONG, Choungki; KIM, Shiho.IEICE transactions on electronics. 2004, Vol 87, Num 9, pp 1646-1648, issn 0916-8524, 3 p.Article

A test circuit for measuring standard deviations of MOSFET channel conductance and threshold voltageTERADA, Kazuo; SUMIDA, Masaki.2002 international conference on microelectronic test structures. 2002, pp 61-66, isbn 0-7803-7464-9, 6 p.Conference Paper

Design of a SOI memory cellSTANOJEVIC, Z; IOANNOU, D. E; LONCAR, B et al.International conference on microelectronic. 1997, pp 297-300, isbn 0-7803-3664-X, 2VolConference Paper

Investigation of radiation sensitivity and post-irradiation thermal sensitivity of MOS transistorODALOVIC, M; VUCKOVIC, B; MANIC, I et al.International conference on microelectronic. 1997, pp 357-360, isbn 0-7803-3664-X, 2VolConference Paper

Electrical Metrics for Lithographic Line-End TaperingGUPTA, Puneet; JEONG, Kwangok; KAHNG, Andrew B et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7028, pp 70283A.1-70283A.12, issn 0277-786X, isbn 978-0-8194-7243-4 0-8194-7243-3, 2Conference Paper

A new channel percolation model for V_T shift in discrete-trap memoriesIELMINI, D; COMPAGNONI, C. Monzio; SPINELLI, A. S et al.IEEE international reliability physics symposium. 2004, pp 515-521, isbn 0-7803-8315-X, 1Vol, 7 p.Conference Paper

Normalized mutual integral difference operator: a novel experimental method for extracting threshold voltage of MOSFETsJIN HE; XING ZHANG; YANGYUAN WANG et al.Microelectronics journal. 2002, Vol 33, Num 8, pp 667-670, issn 0959-8324Article

A comparative study of threshold variations in symmetric and asymmetric undoped double-gate MOSFETSQIANG CHEN; MEINDL, James D.IEEE International SOI conference. 2002, pp 30-31, isbn 0-7803-7439-8, 2 p.Conference Paper

Variation in natural threshold voltage of NVM circuits due to dopant fluctuations and its impact on reliabilityBURNETT, David; HIGMAN, Jack; HOEFLER, Alex et al.IEDm : international electron devices meeting. 2002, pp 529-532, isbn 0-7803-7462-2, 4 p.Conference Paper

Wafer-scale uniformity of vertical-cavity lasers grown by modified phase-locked epitaxy techniqueWALKER, J. D; KUCHTA, D. M; SMITH, J. S et al.Electronics Letters. 1993, Vol 29, Num 2, pp 239-240, issn 0013-5194Article

Improvement of GaAs MESFET performance using surface P-layer doping (SPD) techniqueCHEN, C.-H; SKOGEN, J.IEEE electron device letters. 1989, Vol 10, Num 8, pp 352-354, issn 0741-3106Article

Comparison of the threshold voltage criteria for narrow-channel MOS transistorsASENOV, A. M; STEFANOV, E. N; ANTOV, B. Z et al.International journal of electronics. 1987, Vol 62, Num 6, pp 843-847, issn 0020-7217Article

Mechanism for the threshold voltage shift of a GaAs field-effect transistor around dislocationsMIYAZAWA, S; WADA, K.Applied physics letters. 1986, Vol 48, Num 14, pp 905-907, issn 0003-6951Article

Threshold voltage uniformity of GaAs-FETs on ingot-annealed substratesKASAHARA, J; ARAI, M; WATANABE, N et al.Japanese journal of applied physics. 1986, Vol 25, Num 1, pp L85-L86, issn 0021-4922, 2Article