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Results 1 to 25 of 143

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On the modeling of transient diffusion and activation of boron during post-implantation annealingPICHLER, P; ORTIZ, C. J; COLOMBEAU, B et al.International Electron Devices Meeting. 2004, pp 967-970, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions : Interstitial transport and F co-implant controlCOLOMBEAU, B; SMITH, A. J; PICHLER, P et al.International Electron Devices Meeting. 2004, pp 971-974, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Ultra shallow junction formation by flash annealing : The challenges aheadFOGGIATO, John; WOO SIK YOO.Proceedings - Electrochemical Society. 2005, pp 76-82, issn 0161-6374, isbn 1-56677-463-2, 7 p.Conference Paper

Characteristics of solid-phase diffused ultra-shallow junction using phosphorus doped silicon oxide films for fabrication of sub-100 nm SOI MOSFETCHO, Won-Ju; IM, Kiju; YANG, Jong-Heon et al.Journal of materials science. 2004, Vol 39, Num 5, pp 1819-1821, issn 0022-2461, 3 p.Article

Experimental and simulation study of boron segregation and diffusion during gate oxidation and spike annealingGHETTI, A; BENVENUTI, A; MOLTENI, G et al.International Electron Devices Meeting. 2004, pp 983-986, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Pattern effects during spike annealing of ultra-shallow implantsNIESS, J; NENYEI, Z; LERCH, W et al.Proceedings - Electrochemical Society. 2003, pp 11-16, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Recent developments in rapid thermal processingFIORY, A. T.Journal of electronic materials. 2002, Vol 31, Num 10, pp 981-987, issn 0361-5235, 7 p.Conference Paper

Excimer laser annealing: A solution for the future technology nodes ?PRIVITERA, V; LA MAGNA, A; MANNINO, G et al.Proceedings - Electrochemical Society. 2003, pp 137-143, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

A physics based approach to ultra-shallow p+-junction formation at the 32nm nodeMOKHBERI, Ali; PELAZ, Lourdes; GRIFFIN, Peter B et al.IEDm : international electron devices meeting. 2002, pp 879-882, isbn 0-7803-7462-2, 4 p.Conference Paper

Systematic study of shallow junction formation on germanium substratesHELLINGS, Geert; ROSSEEL, Erik; DE MEYER, Kristin et al.Microelectronic engineering. 2011, Vol 88, Num 4, pp 347-350, issn 0167-9317, 4 p.Conference Paper

Modeling of ultrahighly doped shallow junctions for aggressively scaled CMOSKENNEL, H. W; CEA, S. M; LILAK, A. D et al.IEDm : international electron devices meeting. 2002, pp 875-878, isbn 0-7803-7462-2, 4 p.Conference Paper

Formation of As enriched layer by steam oxidation of As+-implanted SiBAGHIZADEH, A; AGHA-ALIGOL, D; FATHY, D et al.Applied surface science. 2009, Vol 255, Num 11, pp 5857-5860, issn 0169-4332, 4 p.Article

Transient activation model for antimony in relaxed and strained siliconLAI, Y; BENNETT, N. S; AHN, C et al.Solid-state electronics. 2009, Vol 53, Num 11, pp 1173-1176, issn 0038-1101, 4 p.Article

Formation and characterization of nickel silicided shallow N+P junctions using implantation through silicide and low temperature furnace annealingWANG, Chao-Chun; CHEN, Mao-Chieh.Proceedings - Electrochemical Society. 2004, pp 183-190, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Rapid thermal solid phase epitaxy annealing for ultra-shallow junction formationLERCH, W; PAUL, S; DOWNEY, D. F et al.Proceedings - Electrochemical Society. 2003, pp 43-49, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Ultra-shallow junction formation by non-melt laser spike annealing for 50-nm gate CMOSSHIMA, Akio; YUN WANG; TALWAR, Somit et al.Symposium on VLSI Technology. sd, pp 174-175, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si SubstrateLEE, Yao-Jen; HSUEH, Fu-Kuo; HUANG, Shih-Chiang et al.IEEE electron device letters. 2009, Vol 30, Num 2, pp 123-125, issn 0741-3106, 3 p.Article

Mechanisms and application of the Excimer laser doping from spin-on glass sources for USJ fabricationCOUTANSON, S; FOGARASSY, E; VENTURINI, J et al.Applied surface science. 2006, Vol 252, Num 13, pp 4502-4505, issn 0169-4332, 4 p.Conference Paper

Laser doping for microelectronics and microtechnologySAMET, Thierry; KERRIEN, Gurwan; VENTURINI, Julien et al.Applied surface science. 2005, Vol 247, Num 1-4, pp 537-544, issn 0169-4332, 8 p.Conference Paper

Using surface chemistry for defect engineering in ultrashallow junction formationSEEBAUER, E. G.Proceedings - Electrochemical Society. 2005, pp 33-42, issn 0161-6374, isbn 1-56677-463-2, 10 p.Conference Paper

A conventional 45nm CMOS node low-cost platform for general purpose and low power applicationsBOEUF, F; ARNAUD, F; PAIN, L et al.International Electron Devices Meeting. 2004, pp 425-428, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Electron holographic characterization of ultra-shallow junctions in Si for nanoscale MOSFETsPARTHA SARATHI CHAKRABORTY; MCCARTNEY, Martha R; JING LI et al.IEEE transactions on nanotechnology. 2003, Vol 2, Num 2, pp 102-109, issn 1536-125X, 8 p.Article

Ultra-shallow junction formation: Current manufacturability issues and future prospectsHEBB, Jeffrey; AGARWAL, Aditya; GOSSMANN, Hans et al.Proceedings - Electrochemical Society. 2003, pp 83-92, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

C-V profiling of ultra-shallow junctions using step-like background profilesPOPADIC, Miloš; MILOVANOVIC, Vladimir; CUIQIN XU et al.Solid-state electronics. 2010, Vol 54, Num 9, pp 890-896, issn 0038-1101, 7 p.Conference Paper

Plasma dopingMIZUNO, Bunji; SASAKI, Yuichiro; JIN, Cheun-Guo et al.Proceedings - Electrochemical Society. 2005, pp 58-67, issn 0161-6374, isbn 1-56677-463-2, 10 p.Conference Paper

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