Résolution itérative de l'équation de Boltzmann en régime transitoire dans les composés III-V = Iterative resolution of Boltzmann equation in a transient regime in III-V semiconductors compoundsElkssimi, Mohamed; Vaissiere, J.-C.1990, 166 p.Thesis

Effect of the degeneracy on the transport of hot holes in siliconMOATADID, A; VAISSIERE, J. C; NOUGIER, J. P et al.Solid-state electronics. 1989, Vol 32, Num 12, pp 1895-1899, issn 0038-1101Conference Paper

Two-point correlations of diffusion noise sources of hot carriers in semiconductorsNOUGIER, J. P; VAISSIERE, J. C; GONTRAND, C et al.Physical review letters. 1983, Vol 51, Num 6, pp 513-516, issn 0031-9007Article

Etude du transport dans un composant unidimensionnel par la méthode des paquets répartis = Study of the transport in one-dimensional devices by the scattered packet methodHoulet, Patrice; Vaissiere, J.-C.1995, 170 p.Thesis

Génération-recombinaison en régime de porteurs chauds dans le silicium de type p = Hot carrier generation-recombination in p-type siliconNemar, Noureddine; Vaissiere, J.-C.1990, 135 p.Thesis

Hot-carrier thermal conductivity from the simulation of submicron semiconductor structuresGOLINELLI, P; BRUNETTI, R; MARTIN, M. J et al.Semiconductor science and technology. 1997, Vol 12, Num 11, pp 1511-1513, issn 0268-1242Article

Hot phon-hot electron coupled Boltzmann equationsFADEL, M; RIEGER, M; VAISSIERE, J. C et al.Solid-state electronics. 1989, Vol 32, Num 12, pp 1229-1233, issn 0038-1101Conference Paper

Analytical model of high-frequency noise spectrum in Schottky-Barrier diodesSHIKTOROV, P; STARIKOV, E; GRUZINSKIS, V et al.IEEE electron device letters. 2005, Vol 26, Num 1, pp 2-4, issn 0741-3106, 3 p.Article

Monte Carlo calculations of THz generation in nitridesVARANI, L; VAISSIERE, J. C; STARIKOV, E et al.Physica status solidi. A. Applied research. 2002, Vol 190, Num 1, pp 247-256, issn 0031-8965Conference Paper

Frontiers in electronic noise : From submicron to nano structuresREGGIANI, L; PENETTA, C; MATEOS, J et al.International journal of high speed electronics and systems. 2000, Vol 10, Num 1, pp 111-117Conference Paper

Low-field mobility spectrum in nonparabolic compound semiconductorsSTARIKOV, E; SHIKTOROV, P; GRUZINSKIS, V et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 46, pp 8267-8273, issn 0953-8984, 7 p.Article

Monte Carlo analysis of the efficiency of tera-hertz harmonic generation in semiconductor nitridesSHIKTOROV, P; STARIKOV, E; GRUZINSKIS, V et al.Physica status solidi. A. Applied research. 2002, Vol 190, Num 1, pp 271-279, issn 0031-8965Conference Paper

Field-dependent conductivity of lightly doped p-Si at 77 KREGGIANI, L; VARANI, L; VAISSIERE, J. C et al.Journal of applied physics. 1989, Vol 66, Num 11, pp 5404-5408, issn 0021-8979Article

Monte Carlo calculations of hot-electron transport and diffusion noise in GaN and InNSTARIKOV, E; SHIKTOROV, P; GRUZINSKIS, V et al.Semiconductor science and technology. 2005, Vol 20, Num 3, pp 279-285, issn 0268-1242, 7 p.Article

Avoiding spurious velocity overshoots in hydrodynamic simulations of deep submicron devices by a physical modelling of heat transportVARANI, L; PALERMO, C; VAISSIERE, J. C et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S142-S144, issn 0268-1242Conference Paper

Free-carrier grating and terahertz generation from InN n⁺nn⁺ structures under streaming plasma instabilityGRUZINSKIS, V; SHIKTOROV, P; STARIKOV, E et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S173-S175, issn 0268-1242Conference Paper

Monte Carlo calculations of THz generation in wide gap semiconductorsSTARIKOV, E; SHIKTOROV, P; GRUZINSKIS, V et al.Physica. B, Condensed matter. 2002, Vol 314, Num 1-4, pp 171-175, issn 0921-4526Conference Paper

Comment on fluctuations of the hot-carrier state-occupancy function in homogeneous semiconductors. ReplyGANTSEVICH, S. V; GUREVICH, V. L; KATILIUS, R et al.Physical review. B, Condensed matter. 1990, Vol 40, Num 17, pp 11958-11963, issn 0163-1829Article

Matrix determination of the stationary solution of the Boltzmann equation for hot carriers in semiconductorsAUBERT, J. P; VAISSIERE, J. C; NOUGIER, J. P et al.Journal of applied physics. 1984, Vol 56, Num 4, pp 1128-1132, issn 0021-8979Article