AN ELECTRON OPTICAL METHOD FOR THE MEASUREMENT OF THE SUPERCONDUCTING PENETRATION DEPTH = METHODE D'OPTIQUE ELECTRONIQUE POUR LA MESURE DE LA PROFONDEUR DE PENETRATION DE SUPRACONDUCTIVITEVALDRE U.1980; ULTRAMICROSCOPY; NLD; DA. 1980; VOL. 5; NO 1; PP. 19-26; BIBL. 24 REF.Article

ELECTRON MICROSCOPE STAGE DESIGN AND APPLICATIONSVALDRE U.1979; J. MICR.; GBR; DA. 1979; VOL. 117; NO 1; PP. 55-75; BIBL. 3 P.Article

A METHOD FOR THE IMPROVEMENT OF THE VISIBILITY OF TRANSMISSION ELECTRON MICROSCOPE IMAGES.STOBBS WM; VALDRE U.1975; ULTRAMICROSCOPY; NETHERL.; DA. 1975; VOL. 1; NO 2; PP. 89-96; BIBL. 12 REF.Article

APPLICATION OF SCANNING TRANSMISSION ELECTRON MICROSCOPY TO SEMICONDUCTOR DEVICES.SPARROW TG; VALDRE U.1977; PHILOS. MAG.; G.B.; DA. 1977; VOL. 36; NO 6; PP. 1517-1528; BIBL. 25 REF.Article

A COMBINED FREEZE CHAMBER AND LOW TEMPERATURE STAGE FOR AN ELECTRON MICROSCOPE.VALDRE U; HORNE RW.1975; J. MICRO.; G.B.; DA. 1975; VOL. 103; NO 3; PP. 305-317; BIBL. 10 REF.Article

SEM/EBIC IMAGING OF DEFECTS IN THINNED SEMI-CONDUCTOR DEVICES AND CORRELATIONS WITH TEM IMAGESFATHY D; VALDRE U.1980; J. MICR. SPECTROSC. ELECTRON.; FRA; DA. 1980; VOL. 5; NO 2; PP. 175-186; H.T. 3; BIBL. 19 REF.Article

IMAGING OF WEAK LORENTZ OBJECTS (P-N JUNCTIONS) BY HIGH VOLTAGE FRESNEL TEM AND STEM.DARLINGTON EH; VALDRE U.1975; J. PHYS. E; G.B.; DA. 1975; VOL. 8; NO 4; PP. 321-324; BIBL. 13 REF.Article

APPLICATION OF A SIMPLE RF SPUTTERING APPARATUS FOR CLEANING PURPOSES IN ELECTRON MICROSCOPY.VITTORI ANTISARI M; VALDRE U.1977; J. MICR. SPECTROSC. ELECTRON.; FR.; DA. 1977; VOL. 2; NO 1; PP. 1-5; BIBL. 5 REF.Article

OBSERVATION OF DISLOCATIONS AND MICROPLASMA SITES IN SEMICONDUCTORS BY DIRECT CORRELATIONS OF STEBIC, STEM AND ELSFATHY D; SPARROW TG; VALDRE U et al.1980; J. MICR.; GBR; DA. 1980; VOL. 118; NO 3; PP. 263-273; BIBL. 15 REF.Article

Contrast inversion in secondary electron images of thin films on varying the SEM accelerating voltageROCCA, F. J; VALDRE, U.Journal de microscopie et de spectroscopie électroniques. 1989, Vol 14, Num 3, pp 181-185, issn 0395-9279, 5 p.Article

A contribution to the unsolved problem of a high-tilt fully eucentric goniometer stageVALDRE, U; TSUNO, K.Acta crystallographica. Section A, Foundations of crystallography. 1988, Vol 44, Num 6, pp 775-780, issn 0108-7673Article

A double tilting cartridge for transmission electron microscopes with maximum solid angle of exit at the specimenEVERATT, P. G; VALDRE, U.Journal of microscopy (Print). 1985, Vol 139, Num 1, pp 35-40, issn 0022-2720Article

Surface and interface characterization by electron optical methods: selected papers, April 4-15,1987, Erice, Sicily, ItalyHOWIE, A; VALDRE, U.NATO Advanced Study Institute series. Series B, Physics. 1988, Vol 191, issn 0258-1221, VIII-319 p. [327 p.]Conference Proceedings

Electron beam ionization damage processes in p-terphenylHOWIE, A; ROCCA, F. J; VALDRE, U et al.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1985, Vol 52, Num 3, pp 751-757, issn 0141-8637Article

A combined specimen-holder/detector for surface and transmission imaging of samples in a STEM/CTEM or SEMVALDRÈ, U; MICHELINI, G; SPARROW, T. G et al.Ultramicroscopy. 1984, Vol 15, Num 1-2, pp 109-117, issn 0304-3991Article

High-resolution imaging of n-alkane crystals by atomic force microscopyVALDRE, G; ALLESSANDRINI, A; MUSCATELLO, U et al.Philosophical magazine letters. 1998, Vol 78, Num 3, pp 255-261, issn 0950-0839Article

Metastable Metallic Phases: principles and applications, Torino, Italy, from 8th to 10th March 1989VALDRE, U; DAVIS, E. A.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1990, Vol 61, Num 4, issn 0141-8637, 355 p.Conference Proceedings

Control of specimen orientation and environmentTURNER, J. N; VALDRE, U; FUKAMI, A et al.Journal of electron microscopy technique. 1989, Vol 11, Num 4, pp 258-271, issn 0741-0581, 14 p.Article

Formation of amorphous metals by solid-state reactions = Formation des métaux amorphes par réactions à l'état solideSCHULTZ, L.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1990, Vol 61, Num 4, pp 453-471, issn 0141-8637Conference Paper

Coexistence of nanoscopic domains in synthetic membranesVALDRE, G; ALESSANDRINI, A; MUSCATELLO, U et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1999, Vol 79, Num 10, pp 1549-1559, issn 1364-2812Article

Resolution limits in the study of cardiolipin crystals by TEM, SAED and AFMVALDRE, G; MUSCATELLO, U; VALDRE, U et al.Microscopy microanalysis microstructures (Les Ulis). 1995, Vol 6, Num 5-6, pp 659-664, issn 1154-2799Conference Paper

Structural relaxation in metallic glasses = Relaxation structurale dans les verres métalliquesRIONTINO, G; BARICCO, M.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1990, Vol 61, Num 4, pp 715-725, issn 0141-8637Conference Paper

High resolution, top entry goniometers for use in the JEOL transmission electron microscopesDONOVAN, P; EVERATT, P; SELF, P. G et al.Journal of physics. E. Scientific instruments. 1983, Vol 16, Num 12, pp 1242-1246, issn 0022-3735Article

Structure and hidden symmetry in metallic glasses and quasicrystals = Structure et symétrie cachée dans les verres métalliques et quasi-cristauxDUBOIS, J. M; JANOT, C.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1990, Vol 61, Num 4, pp 649-676, issn 0141-8637Conference Paper

Ion-induced crystal-to-glass transition in alloys = Transition cristal-verre induit par faisceau ionique dans les alliagesOSSI, P. M.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1990, Vol 61, Num 4, pp 639-647, issn 0141-8637Conference Paper