Shadow electron beam 1 : 1 scale printing with 0.1 μm size elementsMAKHMUTOV, R. K; SIDORUK, S. N; VALIEV, K. A et al.Vacuum. 1990, Vol 42, Num 1-2, pp 133-137, issn 0042-207XConference Paper

Shadow electron beam 1:1 scale printing with 0.1 μm size elementsMAKHMUTOV, R. K; VALIEV, K. A; VELIKOV, L. V et al.Microelectronic engineering. 1990, Vol 11, Num 1-4, pp 389-395, issn 0167-9317Conference Paper

Theory of an ideal compound X-ray lensPROTOPOPOV, V. V; VALIEV, K. A.Optics communications. 1998, Vol 151, Num 4-6, pp 297-312, issn 0030-4018Article

Effect of the finite width in the generation region of analytical signals in electron-probe methods of surface analysisSMIRNOV, V. K; ABRAMOV, V. V; VALIEV, K. A et al.Vacuum. 1992, Vol 43, Num 8, pp 827-829, issn 0042-207XArticle

Annihilation des positons dans les couches minces métalliquesVALIEV, K. A; GOL'DANSKIJ, V. I; NOVIKOV, YU. A et al.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1987, Vol 45, Num 6, pp 296-298, issn 0370-274XArticle

Mécanisme de gravure des couches polymères dans un plasma de basse températureVALIEV, K. A; MAKHVILADZE, T. M; SARYCHEV, M. E et al.Žurnal tehničeskoj fiziki. 1986, Vol 56, Num 7, pp 1329-1335, issn 0044-4642Article

Measurement of dimensions of resist mask elements below 100 nm with help of a scanning electron microscopeGAVRILENKO, V. P; KALNOV, V. A; NOVIKOV, Yu. A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7272, issn 0277-786X, isbn 978-0-8194-7525-1 0-8194-7525-4, 727227.1-727227.9, 2Conference Paper

Tomographic reconstruction of space plasma inhomogeneities in wide aperture plasma sources under strong restriction on the points of viewRUDENKO, K. V; FADEEV, A. V; ORLIKOVSKY, A. A et al.SPIE proceedings series. 2004, pp 79-85, isbn 0-8194-5324-2, 7 p.Conference Paper

Investigation of multilayered Ge/Si structures with varying thicknessesKISELEV, N. A; LEBEDEV, O. I; VASILIEV, A. L et al.Vacuum. 1995, Vol 46, Num 3, pp 269-276, issn 0042-207XArticle

Aperture effect in plasma etching of deep silicon trenchesABACHEV, M. K; BARYSHEV, Y. P; LUKICHEV, V. F et al.Vacuum. 1990, Vol 42, Num 1-2, pp 129-131, issn 0042-207X, 3 p.Conference Paper

Analysis of entanglement in quantum systems with continuous variables by means of Schmidt decompositionBOGDANOV, A. Yu; BOGDANOV, Yu. I; VALIEV, K. A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 626404.1-626404.17, issn 0277-786X, isbn 0-8194-6329-9, 1VolConference Paper

Electron microscopy of structurally different titanium disilicide films, obtained in one technological processKISELEV, N. A; LEBEDEV, O. I; VASILIEV, A. L et al.Vacuum. 1993, Vol 44, Num 2, pp 143-150, issn 0042-207XArticle

A new method of enhancing focus latitude in laser lithographyVALIEV, K. A; ILKAYEV, D. R; MAKHVILADZE, T. M et al.Microelectronic engineering. 1992, Vol 18, Num 4, pp 295-303, issn 0167-9317Article

Structure and poperties of TiSi₂ thin films and TiSi₂-Si(111) interfacesVALIEV, K. A; VASILIEV, A. G; VASILIEV, A. L et al.Surface & coatings technology. 1991, Vol 45, Num 1-3, pp 281-291, issn 0257-8972, 11 p.Conference Paper

The coherence of excimer laser radiation in projection photolithographyVALIEV, K. A; VELIKOV, L. V; VOLKOV, G. S et al.Microelectronic engineering. 1990, Vol 11, Num 1-4, pp 173-181, issn 0167-9317Conference Paper

Formation de pores dans le polyméthylacrylate durant le processus d'exposition aux rayons XVALIEV, K. A; VELIKOV, L. V; DUSHENKOV, S. D et al.Žurnal tehničeskoj fiziki. 1987, Vol 57, Num 7, pp 1445-1448, issn 0044-4642Article