Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb₁ and Sb₂QIANGHUA XIE; VAN NOSTRAND, J. E; JONES, R. L et al.Journal of crystal growth. 1999, Vol 207, Num 4, pp 255-265, issn 0022-0248Article

Molecular beam epitaxial growth of high-quality GaN nanocolumnsVAN NOSTRAND, J. E; AVERETT, K. L; CORTEZ, R et al.Journal of crystal growth. 2006, Vol 287, Num 2, pp 500-503, issn 0022-0248, 4 p.Conference Paper

Type-II InGaAs/GaAsSb superlattice for photodetection in the near infraredBROWN, G. J; VAN NOSTRAND, J. E; HEGDE, S. M et al.SPIE proceedings series. 2002, pp 179-184, isbn 0-8194-4389-1Conference Paper

Growth of II-IV-V₂ chalcopyrite nitrides by molecular beam epitaxyVAN NOSTRAND, J. E; ALBRECHT, J. D; CORTEZ, R et al.Journal of electronic materials. 2005, Vol 34, Num 10, pp 1349-1356, issn 0361-5235, 8 p.Article

Optical investigation of MBE grown Si-doped Al_xGa_1-xN as a function of nominal Al mole fraction up to 0.5MCFALL, J. L; HENGEHOLD, R. L; YCO, Y. K et al.Journal of crystal growth. 2001, Vol 227-28, pp 458-465, issn 0022-0248Conference Paper

Surface damage produced by 20 keV Ga bombardment of Ge(001)BELLON, P; CHEY, S. J; VAN NOSTRAND, J. E et al.Surface science. 1995, Vol 339, Num 1-2, pp 135-141, issn 0039-6028Article

The effects of oxygen, nitrogen, and hydrogen annealing on Mg acceptors in GaN as monitored by electron paramagnetic resonance spectroscopyMATLOCK, D. M; ZVANUT, M. E; HAIYAN WANG et al.Journal of electronic materials. 2005, Vol 34, Num 1, pp 34-39, issn 0361-5235, 6 p.Article

Microcathodoluminescence characterization of III-V nitride heterojunctions and devicesBRILLSON, L. J; JESSEN, G. H; VAN NOSTRAND, J. E et al.Proceedings - Electrochemical Society. 2003, pp 229-234, issn 0161-6374, isbn 1-56677-349-0, 6 p.Conference Paper

Electrical and optical investigation of MBE grown Si-doped Al_xGa_1-xN as a function of Al mole fraction up to 0.5AHOUJJA, M; MCFALL, J. L; YEO, Y. K et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 285-289, issn 0921-5107Conference Paper

Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxyVAN NOSTRAND, J. E; JAY CHEY, S; CAHILL, D. G et al.Surface science. 1996, Vol 346, Num 1-3, pp 136-144, issn 0039-6028Article

Influence of the plasma oxidation power on the switching properties of Al/Cu_xO/Cu memristive devicesMCDONALD, N. R; BISHOP, S. M; BRIGGS, B. D et al.Solid-state electronics. 2012, Vol 78, pp 46-50, issn 0038-1101, 5 p.Conference Paper

Electrical and magnetic characteristics of MBE-grown GaMnNALBRECHT, J. D; VAN NOSTRAND, J. E; CLAFLIN, B et al.Journal of superconductivity. 2005, Vol 18, Num 1, pp 69-73, issn 0896-1107, 5 p.Conference Paper

Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)GLASER, E. R; CARLOS, W. E; BRANDT, M. S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 93, Num 1-3, pp 39-48, issn 0921-5107Article

Electrical characterization of self-assembled In_0.5Ga_0.5As/GaAs quantum dots by deep level transient spectroscopyFANG, Z.-Q; XIE, Q. H; LOOK, D. C et al.Journal of electronic materials. 1999, Vol 28, Num 8, pp L13-L16, issn 0361-5235Article

Characteristics of in situ deposited GaAs metal-insulator-semiconductor structuresREED, J; TAO, M; VAN NOSTRAND, J. E et al.Solid-state electronics. 1995, Vol 38, Num 7, pp 1351-1357, issn 0038-1101Article