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MATERIELS POUR LE FRANCAIS EN NEERLANDAISVAN ROSSUM M. J.LEVENDE TALEN. 1972, Num 286, pp 164-167Article

CHARACTERIZATION OF SOLIDS BY MOESSBAUER SPECTROSCOPYVAN ROSSUM M.1982; PROG. CRYST. GROWTH CHARACT.; ISSN 501948; GBR; DA. 1982; VOL. 5; NO 1-2; PP. 1-45; BIBL. 101 REF.Article

A novel spike distanceVAN ROSSUM, M. C. W.Neural computation. 2001, Vol 13, Num 4, pp 751-763, issn 0899-7667Article

The future of microelectronics: Evolution or revolution?VAN ROSSUM, M.Microelectronic engineering. 1996, Vol 34, Num 1, pp 125-134, issn 0167-9317Conference Paper

Rôle of a single scatterer in a multiple scattering mediumNIEUWENHUIZEN, T. M; VAN ROSSUM, M. C. W.Physics letters. A. 1993, Vol 177, Num 1, pp 102-106, issn 0375-9601Article

OBSERVATION OF THE AMORPHIZATION PROCESS IN DIAMOND BY MOESSBAUER SPECTROSCOPYVAN ROSSUM M; DE BRUYN J; LANGOUCHE G et al.1979; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1979; VOL. 73; NO 2; PP. 127-128; BIBL. 5 REF.Article

Shock wave lithotripsy treatment of radiolucent ureteric calculi with the help of contrast mediumBUCHHOLZ, N. P. N; VAN ROSSUM, M.European urology. 2001, Vol 39, Num 2, pp 200-203, issn 0302-2838Article

Influence of skin layers on speckle correlations of light transmitted through disordered mediaVAN ROSSUM, M. C. W; NIEUWENHUIZEN, T. M.Physics letters. A. 1993, Vol 177, Num 6, pp 452-458, issn 0375-9601Article

MOESSBAUER STUDY OF FIRING CONDITIONS USED IN THE MANUFACTURE OF THE GREY AND RED WARE OF TURENG-TEPEBOUCHEZ R; COEY JMD; COUSSEMENT R et al.1974; J. PHYS., COLLOQ.; FR.; DA. 1974; NO 6; PP. 541-546; ABS. FR.; BIBL. 23 REF.; (CONF. INT. APPL. EFFET MOESSBAUER; BENDOR; 1974)Conference Paper

ISOLATION OF FE CHARGE STATES BY ION IMPLANTATION AND THEIR STUDY BY MOESSBAUER SPECTROSCOPYVAN ROSSUM M; VERBIEST E; PATTYN H et al.1982; RADIAT. EFF.; ISSN 0033-7579; GBR; DA. 1982; VOL. 64; NO 1-4; PP. 77; BIBL. 2 REF.Article

MOESSBAUER STUDIES OF 57CO IMPLANTED IN SOLID OXYGENBUKSHPAN S; VAN ROSSUM M; PATTYN H et al.1981; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1981; VOL. 82; NO 1; PP. 40-42; BIBL. 12 REF.Article

RARE GAS MATRIX ISOLATION OF 57CO BY THE ION IMPLANTATION TECHNIQUEVAN ROSSUM M; ODEURS J; PATTYN H et al.1980; PHYS. LETT. B; ISSN 0370-2693; NLD; DA. 1980; VOL. 75; NO 3; PP. 241-242; BIBL. 3 REF.Article

ON THE QUADRUPOLE INTERACTION OF XE IMPLANTED IN DIAMONDVAN ROSSUM M; DEBRUYN J; DEZSI I et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 52; NO 1; PP. K31-K34; BIBL. 6 REF.Article

ELECTRIC FIELD GRADIENT AND LATTICE LOCATION OF TIN IN TELLURIUM.ROTS M; NAMAVAR F; LANGOUCHE G et al.1978; J. PHYS. F.; G.B.; DA. 1978; VOL. 8; NO 5; PP. L117-L120; BIBL. 3 REF.Article

The radiolucent ureteric calculus at the end of a contrast-medium column : where to focus the shock wavesBUCHHOLZ, N.-P. N; VAN ROSSUM, M.BJU international (Papier). 2001, Vol 88, Num 4, pp 325-328, issn 1464-4096Article

LASER AND THERMAL ANNEALING OF TE-IMPLANTED SILICONDE BRUYN J; LANGOUCHE G; VAN ROSSUM M et al.1979; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1979; VOL. 73; NO 4; PP. 356-358; BIBL. 8 REF.Article

OBSERVATION OF A STRONG DOSE DEPENDENCE IN 57CO IMPLANTATIONS IN SI AND GELANGOUCHE G; DEZSI I; VAN ROSSUM M et al.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 93; NO 2; PP. K107-K110; BIBL. 7 REF.Article

From micro- to nanoelectronics : new technology requirementsVAN ROSSUM, M.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 20, Num 1-2, pp 128-133, issn 0921-5107Conference Paper

A MOESSBANER STUDY ON POTTERY OF TURENG TEPE IISCHMIDT KP; VAN ROSSUM M; MEYKENS T et al.1974; J. PHYS., COLLOQ.; FR.; DA. 1974; VOL. 35; NO 1; PP. 105-106; ABS. FR.; BIBL. 3 REF.; (COLLOQ. INTERACTIONS HYPERFINES DETECTEES RAYONNEM. NUCL.; LIEGE; 1973)Conference Paper

Noise removal at the rod synapse of mammalian retinaVAN ROSSUM, M. C. W; SMITH, R. G.Visual neuroscience (Print). 1998, Vol 15, Num 5, pp 809-821, issn 0952-5238Article

Universal fluctuations in a simple disordered systemNIEUWENHUIZEN, T. M; VAN ROSSUM, M. C. W.Physics letters. A. 1991, Vol 160, Num 5, pp 461-464, issn 0375-9601Article

MOESSBAUER STUDY OF THE DISORDER IN CRYSTALLINE AND AMORPHOUS GE IMPLANTED WITH 125MTE IONSDEZSI I; VAN ROSSUM M; DE BRUYN J et al.1982; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1982; VOL. 87; NO 4; PP. 193-195; BIBL. 15 REF.Article

THE STUDY OF DEFECTS IN TYPE-IV SEMICONDUCTORS BY MOESSBAUER SPECTROSCOPYVAN ROSSUM M; LANGOUCHE G; DEBRUYN J et al.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 2; PP. 311-322; ABS. FRE; BIBL. 47 REF.Article

THE ORIENTATION OF THE PRINCIPAL AXES SYSTEM OF THE ELECTRIC FIELD GRADIENT IN FE(III) VERMICULITE DETERMINED BY MOESSBAUER SPECTROSCOPY.HELSEN JA; VAN DEYCK M; LANGOUCHE G et al.1975; CLAYS CLAY MINER.; G.B.; DA. 1975; VOL. 23; NO 4; PP. 332-334; BIBL. 12 REF.; 6 ILL.Article

THE HYPERFINE ASYMMETRY EFFECT.COUSSEMANT R; ROTS M; LANGOUCHE G et al.1974; INTERNATION. J. MAGNET.; G.B.; DA. 1974; VOL. 6; NO 3-4; PP. 259-267; BIBL. 11 REF.Article

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