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au.\*:("VAN RUN AMJG")

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COMPUTATION OF STRIATED IMPURITY DISTRIBUTIONS IN MELT-GROWN CRYSTALS, TAKING ACCOUNT OF PERIODIC REMELTVAN RUN AMJG.1979; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1979; VOL. 47; NO 5-6; PP. 680-692; BIBL. 22 REF.Article

COMPUTATION OF THE NON-STEADY MOTION OF THE SILICON CRYSTAL-MELT INTERFACE DUE TO TEMPERATURE FLUCTUATIONS IN THE MELT CLOSE TO THIS INTERFACEVAN RUN AMJG.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 54; NO 2; PP. 195-206; BIBL. 29 REF.Article

A CRITICAL PULLING RATE FOR REMELT SUPPRESSION IN SILICON CRYSTAL GROWTHVAN RUN AMJG.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 53; NO 2; PP. 441-442; BIBL. 10 REF.Article

POLING OF A FERROELECTRIC MEDIUM BY MEANS OF A BUILT-IN SPACE CHARGE FIELD, WITH SPECIAL REFERENCE TO SINTERED MAGNETOELECTRIC COMPOSITES.VAN DEN BOOMGAARD J; VAN RUN AMJG.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 19; NO 5; PP. 405-407; BIBL. 9 REF.Article

AN IN SITU GROWN EUTECTIC MAGNETOELECTRIC COMPOSITE MATERIAL. II. PHYSICAL PROPERTIESVAN RUN AMJG; TERRELL DR; SCHOLING JH et al.1974; J. MATER. SCI.; G.B.; DA. 1974; VOL. 9; NO 10; PP. 1710-1714; BIBL. 10 REF.Article

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