DYNAMIC DEFORMATION OF SILICON-RICH V₃SI SINGLE CRYSTALS AT ELEVATED TEMPERATURESBERTRAM M; PAUFLER P; KLEINSTUECK K et al.1981; CRYST. RES. TECHNOL.; DDR; DA. 1981; VOL. 16; NO 1; PP. 89-93; ABS. GER; BIBL. 5 REF.Article

ON A POSSIBLE CONNECTION BETWEEN SUPERCONDUCTIVITY AND COVALENCYSCHOIJET M.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 8; PP. 4550-4552; BIBL. 26 REF.Article

EFFECT OF NON-HYDROSTATIC STRESS ON THE SUPERCONDUCTING TRANSITION OF A 15 COMPOUNDS WITH HIGH CRITICAL TEMPERATUREPIETRASS B.1980; PHYS. STATUS SOLIDI, SECT. A, APPL. RES.; DDR; DA. 1980-08-16; VOL. 60; NO 2; PP. 441-450; BIBL. 21 REF.Article

A SQUID SUSCEPTOMETER FOR FIELDS UP TO 8.5 TESLAPELIZZONE M; TREYVAUD A.1981; APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1981; VOL. 24; NO 4; PP. 375-379; BIBL. 22 REF.Article

ASSESSMENT OF THE THERMODYNAMIC PROPERTIES OF VANADIUM SILICIDES UTILIZING TERNARY PHASE EQUILIBRIAFREUND PF; SPEAR KE.1978; J. LESS-COMMON METALS; NLD; DA. 1978; VOL. 60; NO 2; PP. 185-193; BIBL. 31 REF.Article

INNVESTIGATIONS OF THE ENERGY GAP OF V₃SI MONOCRYSTALSSCHUMANN J.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; DDR; DA. 1980; VOL. 99; NO 1; PP. 79-90; ABS. GER; BIBL. 16 REF.Article

CARACTERISTIQUES THERMODYNAMIQUES DE SC₅SI₃, TI₅SI₃ ET V₅SI₃SYCHEV NI; GEL'D PV; KALISHEVICH GI et al.1980; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1980; VOL. 54; NO 1; PP. 224-225; BIBL. 1 REF.Article

CARACTERE DE LA MANIFESTATION D'UNE INTERFERENCE QUANTIQUE DANS LES CIRCUITS SUPRACONDUCTEURS EN V₃SIGOLOVASHKIN AI; LYKOV AN; PRISHCHEPA SL et al.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 8; PP. 1676-1680; BIBL. 14 REF.Article

Electrical characterization of flash memory structure with vanadium silicide nano-particlesKIM, Dongwook; DONG UK LEE; EUN KYU KIM et al.Journal of alloys and compounds. 2013, Vol 559, pp 1-4, issn 0925-8388, 4 p.Article

DENSITY OF STATES MODEL FOR THE LATTICE TRANSFORMATION IN A-15 COMPOUNDS. APPLICATION TO THE MAGNETIC SUSCEPTIBILITY OF V₃SIPIETRASS B; HANDSTEIN A; BEHR G et al.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 98; NO 2; PP. 597-604; ABS. GER; BIBL. 21 REF.Article

INFLUENCE OF DEFECTS ON NB₃SN AND V₃SI SUPERCONDUCTING PROPERTIESKARKIN AE; ARKHIPOV VE; PARKHOMENKO VD et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 1; PP. K53-K57; BIBL. 14 REF.Article

THE FORMATION OF VANADIUM SILICIDES AT THIN-FILM INTERFACESSCHUTZ RJ; TESTARDI LR.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 9; PP. 5773-5781; BIBL. 20 REF.Article

ANNEALING BEHAVIOUR OF THE CRITICAL CURRENT DENSITY AND THE SUPERCONDUCTING PARAMETERS TSUB(C), KAPPA AND HSUB(C2) IN A NEUTRON-IRRADIATED V₃SI SINGLE CRYSTALREICHERT T; MEIER HIRMER R; KUEPFER H et al.1981; PHYS. STATUS SOLIDI, SECT. A, APPL. RES.; DDR; DA. 1981-04-16; VOL. 64; NO 2; PP. 585-592; BIBL. 29 REF.Article

On the geometrical condition for x-ray scattering by thermal waves in crystals = Sur la condition géométrique pour la diffusion des rayons X par des ondes thermiques dans des cristaux = Ueber die geometrische Bedingung fuer Roentgenstreuung durch thermische Wellen in KristallenBADZIAN, A.R.Physica status solidi. A. Applied research. 1982, Vol 74, Num 2, pp 637-649, issn 0031-8965Article

SPIN-LATTICE RELAXATION IN A15 TYPE INTERMETALLIC COMPOUNDSSKRIPOV AV; STEPANOV AP.1981; FIZ. TVERD. TELA; SUN; DA. 1981-04; VOL. 23; NO 4; PP. 966-974; BIBL. 27 REF.Article

PRESSURE DEPENDENCE OF ELASTIC CONSTANTS AND OF SHEAR MODE INSTABILITY FOR NB₃SN = VARIATION AVEC LA PRESSION DES CONSTANTES D'ELASTICITE ET DE L'INSTABILITE DE MODE DE CISAILLEMENT POUR NB₃SNCHANG ZP; BARSCH GR.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 7; PP. 3242-3255; BIBL. 60 REF.Article

DEFORMATION PHASE TRANSITIONS IN CRYSTALS OF THE CUBIC SYSTEM. TENSILE STRAINSAKHNENKO VP; TALANOV VM.1979; FIZ. TVERD. TELA; SUN; DA. 1979-08; VOL. 21; NO 8; PP. 2435-2444; BIBL. 26 REF.Article

EXPERIMENTAL AND THEORETICAL BAND-STRUCTURE STUDIES OF REFRACTORY METAL SILICIDESWEAVER JH; MORUZZI VL; SCHMIDT FA et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 6; PP. 2916-2922; BIBL. 21 REF.Article

EFFECT OF NEUTRON IRRADIATION ON NMR PROPERTIES ON SINGLE-CRYSTALLALLINE V₃SISKRIPOV AV; STEPANOV AP; PAN VM et al.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 102; NO 2; PP. 671-679; ABS. RUS; BIBL. 26 REF.Article

AUSHEILVERHALTEN DER KRITISCHEN STROMDICHTE UND DER SUPRALEITENDEN PARAMETER T_C, K UND H_C2 IN NEUTRONENBESTRAHLTEN V₃SI-EINKRISTALLEN = ANNEALING BEHAVIOUR OF THE CRITICAL CURRENT DENSITY AND THE SUPERCONDUCTING PARAMETERS T_C, K AND H_C2 IN NEUTRON-IRRADIATED V₃SI SINGLE CRYSTALS = COMPORTEMENT APRES RECUIT DE LA DENSITE DE COURANT CRITIQUE ET DES PARAMETRES T_C, K ET H_C2 DANS DES MONOCRISTAUX DE V₃SI IRRADIES PAR DES NEUTRONSREICHERT T.1980; KERNFASCH.-ZENTR. KARLSRUHE K.F.K.; DEU; DA. 1980; NO 3016; 79 P.; BIBL. 47 REF.Serial Issue

First principles calculations in V―Si system. Defects in A15-V₃Si phaseCOLINET, Catherine; TEDENAC, Jean-Claude.Computational materials science. 2014, Vol 85, pp 94-101, issn 0927-0256, 8 p.Article

Nearly ideal unguarded vanadium-silicide Schottky-barrier diodesDROBNY, V. F.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 9, pp 1294-1298, issn 0018-9383Article

Crystal growth of vanadium silicides from high-temperature metal solutions and some properties of the crystalsOKADA, S; SUDA, T; KAMEZAKI, A et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 1996, Vol 209, Num 1-2, pp 33-37, issn 0921-5093Conference Paper

ZUM CHEMISCHEN TRANSPORT DER VANADIUMSILICIDE = SUR LE TRANSPORT CHIMIQUE DU SILICIURE DE VANADIUMBARTSCH K; WOLF E.1983; ZEITSCHRIFT FUER ANORGANISCHE UND ALLGEMEINE CHEMIE; ISSN 0044-2313; DDR; DA. 1983; VOL. 501; PP. 27-39; ABS. ENG; BIBL. 18 REF.Article

DISTRIBUTION DE LA DENSITE ELECTRONIQUE DANS V₃SI STOECHIOMETRIQUEKODESS BN; BUTMAN LA; PORAJ KOSHITS MA et al.1982; KRISTALLOGRAFIJA; ISSN 0023-4761; SUN; DA. 1982; VOL. 27; NO 3; PP. 606-607; BIBL. 4 REF.Article