Vol de données informatiques: une révolution dans le droit pénalVANDENBERGHE, G.Droit et Informatique. 1986, Num 2, pp 94-96Article

SO(2N+1) IN AN SO(2N-3) CERCLE X SU(2) CERCLE X SU(2) BASIS. I: REDUCTION OF THE SYMMETRIC REPRESENTATIONSDEMEYER H; DE WILDE P; VANDENBERGHE G et al.1982; J. PHYS. A; ISSN 0305-4470; GBR; DA. 1982; VOL. 15; NO 9; PP. 2665-2676; BIBL. 13 REF.Article

SENSIBILITE AUX ANTIBIOTIQUES DE SOUCHES DE GONOCOQUES ISOLEES A BUTARE, RWANDAMUBILIGI V; VANDENBERGHE G; MEHEUS A et al.1974; BULL. SOC. PATHOL. EXOT.; FR.; DA. 1974; VOL. 67; NO 6; PP. 574-579; ABS. ANGL.; BIBL. 12 REF.Article

Quelques réflexionx sur l'enseignement de la discipline intitulée informatique et droitVANDENBERGHE, G. P.Conférence des institutions responsables de l'enseignement dans le domaine Informatique et droit. 1985, pp 151-154Conference Proceedings

A comparison of vectorized methods for solving the two-dimensional diffusion equation : multigrid versus polynomial preconditioned conjugate gradientHOLTER, B; VANDENBERGHE, G.Applied mathematics and computation. 1990, Vol 40, Num 1, pp 77-103, issn 0096-3003, 27 p., 1Article

Third- and fourth-order analysis of orbit- and spin-forbidden transitions in two-photon spectroscopy of lanthanide compoundsCEULEMANS, A; VANDENBERGHE, G. M.The Journal of chemical physics. 1993, Vol 98, Num 12, pp 9372-9378, issn 0021-9606Article

Lymphoblastic lymphoma presenting as bilateral gigantomastia in pregnancyVANDENBERGHE, G; CLAERHOUT, F; AMANT, F et al.International journal of gynaecology and obstetrics. 2005, Vol 91, Num 3, pp 252-253, issn 0020-7292, 2 p.Article

(Sub-)100nm gate patterning using 248nm alternating PSMVANDENBERGHE, G; JAENEN, P; JONCKHEERE, R et al.SPIE proceedings series. 2001, pp 61-69, isbn 0-8194-4111-2Conference Paper

AIMS-45 image validation of contact hole patterns after inverse lithography at NA 1.35HENDRICKX, E; BIRKNER, R; KEMPSELL, M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7122, issn 0277-786X, isbn 978-0-8194-7355-4 0-8194-7355-3, 71221E.1-71221E.11, 2Conference Paper

Lithography for sub-90nm applicationsVAN DEN HOVE, L; GOETHALS, A. M; RONSE, K et al.IEDm : international electron devices meeting. 2002, pp 3-8, isbn 0-7803-7462-2, 6 p.Conference Paper

Reticle imaging and metrology using a CD-SEM at IMECJAMES, A; FELTEN, F; POLLI, M et al.SPIE proceedings series. 2000, pp 128-133, isbn 0-8194-3614-3Conference Paper

Proximity bias swing : origin and characterizationZANDBERGEN, P; GEHOEL-VAN ANSEM, W; DE KLERK, J et al.SPIE proceedings series. 1998, pp 837-844, isbn 0-8194-2778-0, 2VolConference Paper

First trimester screening for intra-uterine growth restriction and early-onset pre-eclampsiaVANDENBERGHE, G; MENSINK, I; TWISK, J. W. R et al.Prenatal diagnosis. 2011, Vol 31, Num 10, pp 955-961, issn 0197-3851, 7 p.Article

Characterization and optimization of positive tone DUV resists on TiN substratesZANDBERGEN, P; GEHOEL-VAN ANSEM, W; VANDENBERGHE, G et al.SPIE proceedings series. 1997, pp 314-323, isbn 0-8194-2463-3Conference Paper

Printing the Metal and Contact Layers for the 32 and 22 nm Node: Comparing positive and negative Tone Development ProcessVAN LOOK, L; BEKAERT, J; TRUFFERT, V et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7640, issn 0277-786X, isbn 978-0-8194-8054-5 0-8194-8054-1, 764011.1-764011.12, 2Conference Paper

ArF lithography options for 100nm technologiesVANDENBERGHE, G; KIM, Y.-C; DELVAUX, C et al.SPIE proceedings series. 2001, pp 179-190, isbn 0-8194-4032-9, 2VolConference Paper

Characterization and control of dynamic lens heating effects under high volume manufacturing conditionsBEKAERT, J; VAN LOOK, L; VANDENBERGHE, G et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7973, issn 0277-786X, isbn 978-0-8194-8532-8, 79730V.1-79730V.11, 2Conference Paper

Scanner matching for standard and freeform illumination shapes using FlexRayBEKAERT, J; VAN LOOK, L; D'HAVE, K et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7973, issn 0277-786X, isbn 978-0-8194-8532-8, 79731I.1-79731I.12, 2Conference Paper

Fourth-order contributions to the ⁸S_7/2→⁶I_17/2 two-photon transition of Gd³⁺ in a cubic latticeCEULEMANS, A; VANDENBERGHE, G. M.Journal of alloys and compounds. 1994, Vol 207-08, pp 102-106, issn 0925-8388Conference Paper

Freeform illumination sources: An experimental study of source-mask optimization for 22 nm SRAM cellsBEKAERT, J; LAENENS, B; TSAI, M. C et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7640, issn 0277-786X, isbn 978-0-8194-8054-5 0-8194-8054-1, 764008.1-764008.12, 2Conference Paper

A 0.314μm² 6T-SRAM cell build with tall triple-gate devices for 45nm node applications using 0.75NA 193nm lithographyNACKAENS, A; ERCKEN, M; DE MARNEFFE, J. F et al.International Electron Devices Meeting. 2004, pp 269-272, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper