ON THE INFLUENCE OF CRATER EDGES AND NEUTRAL BEAM COMPONENT ON IMPURITY PROFILES FROM RASTER SCANNING SIMSVANDERVORST W; MAES HE; DE KEERSMAECKER R et al.1982; SURF. INTERFACE ANAL.; ISSN 0142-2421; GBR; DA. 1982; VOL. 4; NO 6; PP. 245-252; BIBL. 38 REF.Article

The influence of oxygen on the analysis of a Pt/Si structure with secondary ion mass spectrometryELST, K; VANDERVORST, W.Journal of applied physics. 1993, Vol 73, Num 9, pp 4649-4659, issn 0021-8979Article

XPS analysis of ion-beam-induced oxidation of silicon substratesALAY, J. L; VANDERVORST, W.Surface and interface analysis. 1992, Vol 19, Num 1-12, pp 313-317, issn 0142-2421Conference Paper

An efficient smoothing algorithm for spreading resistance calculationsCLARYSSE, T; VANDERVORST, W.Solid-state electronics. 1988, Vol 31, Num 1, pp 53-63, issn 0038-1101Article

Secondary ion mass spectrometry profiling of shallow, implanted layers using quadrupole and magnetic sector instrumentsVANDERVORST, W; SHEPHERD, F. R.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1987, Vol 5, Num 3, pp 313-320, issn 0734-2101Article

Recent developments in the interpretation of spreading resistance profiles for VLSI-technologyVANDERVORST, W; CLARYSSE, T.Journal of the Electrochemical Society. 1990, Vol 137, Num 2, pp 679-683, issn 0013-4651Article

Stability analysis of correction schemes for spreading resistance measurementsCLARYSSE, T; VANDERVORST, W.Solid-state electronics. 1990, Vol 33, Num 12, pp 1587-1600, issn 0038-1101, 14 p.Article

Scanning ion imaging as a diagnostic tool for an ion microscopeBROWN, J. D; VANDERVORST, W.Surface and interface analysis. 1985, Vol 7, Num 2, pp 74-78, issn 0142-2421Article

Quantitative analysis of on bevel electrical junction shifts due to carrier spilling effectsCLARYSSE, T; VANDERVORST, W; CASEL, A et al.Applied physics letters. 1990, Vol 57, Num 26, pp 2856-2858, issn 0003-6951Article

Secondary ion mass spectrometry: depth profiling of shallow as implants in silicon and silicon dioxideVANDERVORST, W; MAES, H. E; DE KEERSMAECKER, R. F et al.Journal of applied physics. 1984, Vol 56, Num 5, pp 1425-1433, issn 0021-8979Article

Optimization of high efficiency multilayer solar cells based on III-V compounds. The contribution of IMEC to the work proposedMERTENS, R; BORGHS, S; VANDERVORST, W et al.European Communities Contractors. Meeting. 1. 1987, pp 157-160Conference Paper

Chemical effects during ripple formation with isobaric ion beamsSARKAR, S; FRANQUET, A; MOUSSA, A et al.Applied surface science. 2011, Vol 257, Num 15, pp 6424-6428, issn 0169-4332, 5 p.Article

Transient effects during SIMS depth profiling with oxygenAVAU, D; VANDERVORST, W; MAES, H. E et al.Surface and interface analysis. 1988, Vol 11, Num 10, pp 522-528, issn 0142-2421Article

Incorporation of a resistivity-dependent contact radius in an accurate integration algorithm for spreading resistance calculationsPIESSENS, R; VANDERVORST, W. B; MAES, H. E et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 2, pp 468-474, issn 0013-4651Article

Quantification of Ge in Si_1-xGe_x by using low-energy Cs⁺ and O₂⁺ ion beamsPURETI, Rathaiah; VANDERVORST, W.Surface and interface analysis. 2013, Vol 45, Num 1, pp 402-405, issn 0142-2421, 4 p.Conference Paper

Quantitative AES and XPS investigation of magnetron sputtered TiN_x filmsBENDER, H; PORTILLO, J; VANDERVORST, W et al.Surface and interface analysis. 1989, Vol 14, Num 6-7, pp 337-346, issn 0142-2421Conference Paper

Probe penetration in spreading resistance measurementsVANDERVORST, W. B; MAES, H. E.Journal of applied physics. 1984, Vol 56, Num 6, pp 1583-1590, issn 0021-8979Article

SIMS analysis of oxynitrides : evidence for nitrogen diffusion induced by oxygen floodingDE WITTE, H; CONARD, T; VANDERVORST, W et al.Surface and interface analysis. 2000, Vol 29, Num 11, pp 761-765, issn 0142-2421Article

Mass and energy dependence of depth resolution in secondary-ion mass spectrometry experiments with iodine, oxygen, and cesium beams on AlGaAs/GaAs multilayer structuresMEURIS, M; VANDERVORST, W; DE BISSCHOP, P et al.Applied physics letters. 1989, Vol 54, Num 16, pp 1531-1533, issn 0003-6951Article

Influence of processing conditions on CoSi₂ formation in the presence of a Ti capping layerDETAVERNIER, C; VAN MEIRHAEGHE, R. L; VANDERVORST, W et al.Microelectronic engineering. 2004, Vol 71, Num 3-4, pp 252-261, issn 0167-9317, 10 p.Article

Determination of the angle of incidence in a Camera IMS-4f SIMS instrumentMEURIS, M; DE BISSCHOP, P; LECLAIR, J. F et al.Surface and interface analysis. 1989, Vol 14, Num 11, pp 739-743, issn 0142-2421Article

Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilaneVINCENT, B; LOO, R; VANDERVORST, W et al.Journal of crystal growth. 2010, Vol 312, Num 19, pp 2671-2676, issn 0022-0248, 6 p.Article

Heavily phosphorus-doped epitaxial Si deposited by low-temperature plasma-enhanced chemical vapor depositionBAERT, K; VANHELLEMONT, J; VANDERVORST, W et al.Applied physics letters. 1991, Vol 59, Num 7, pp 797-799, issn 0003-6951Article

Nanoscale post-breakdown conduction of HfO₂/SiO₂MOS gate stacks studied by enhanced-cafmBLASCO, X; NAFRIA, M; AYMERICH, X et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 12, pp 2817-2819, issn 0018-9383, 3 p.Article

Investigation of the formation process of MCS⁺-molecular ions during sputteringVLEKKEN, J; D'OLIESLAEGER, M; KNUYT, G et al.Journal of the American Society for Mass Spectrometry. 2000, Vol 11, Num 7, pp 650-658, issn 1044-0305Article