Direct and surface state mediated electron transfer at semiconductor/electrolyte junctions. I. A comparison of steady-state resultsVANMAEKELBERGH, D.Electrochimica acta. 1997, Vol 42, Num 7, pp 1121-1134, issn 0013-4686Article

RELATIONSHIP BETWEEN STABILIZATION AND PHOTOCURRENT AT N-TYPE SEMICONDUCTOR ELECTRODES ON THE BASIS A MODEL INCLUDING SURFACE RECOMBINATION THROUGH DECOMPOSITION INTERMEDIATESVANMAEKELBERGH D; GOMES WP; CARDON F et al.1983; CS FARADAY TRANSACTIONS 1; ISSN 0300-9599; GBR; DA. 1983; VOL. 79; NO 6; PP. 1391-1401; BIBL. 7 REF.Article

STUDY OF STABILIZATION AND SURFACE RECOMBINATION ON N-GAP PHOTOELECTRODES: MECHANISMS AND INTERRELATIONVANMAEKELBERGH D; GOMES WP; CARDON F et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 3; PP. 546-550; BIBL. 10 REF.Article

Coupled partial ion-transfer steps in the anodic dissolution of metalsVANMAEKELBERGH, D; ERNE, B. H.Journal of the Electrochemical Society. 1999, Vol 146, Num 7, pp 2488-2494, issn 0013-4651Article

Catalysis and pore initiation in the anodic dissolution of silicon in HFKOOIJ, E. S; VANMAEKELBERGH, D.Journal of the Electrochemical Society. 1997, Vol 144, Num 4, pp 1296-1301, issn 0013-4651Article

The anodic decomposition mechanism of n-GaP electrodes: a hole injection studyVANMAEKELBERGH, D; KELLY, J. J.Journal of the Electrochemical Society. 1989, Vol 136, Num 1, pp 108-113, issn 0013-4651Article

On the impedance associated with electron-hole recombination in the space charge layer of an illuminated semiconductor/electrolyte interfaceVANMAEKELBERGH, D; CARDON, F.Semiconductor science and technology. 1988, Vol 3, Num 2, pp 124-133, issn 0268-1242Article

Calculation of the electrical impedance associated with the surface recombination of free carriers at an illuminated semiconductor/electrolyte interfaceVANMAEKELBERGH, D; CARDON, F.Journal of physics. D, Applied physics (Print). 1986, Vol 19, Num 4, pp 643-656, issn 0022-3727Article

Relation between chemical and electrochemical steps in the anodic decomposition of III-V semiconductor electrodes : a comprehensive modelVANMAEKELBERGH, D; GOMES, W. P.Journal of physical chemistry (1952). 1990, Vol 94, Num 4, pp 1571-1575, issn 0022-3654Article

Kinetic interpretation of the rest potential of n-type semiconductors during electroless dissolutionVANMAEKELBERGH, D; KELLY, J. J.Journal of physical chemistry (1952). 1990, Vol 94, Num 13, pp 5406-5412, issn 0022-3654Article

The influence of adsorbed ions on charge-carrier recombination at the n-GaAs photoanode surfaceVANMAEKELBERGH, D; GOMES, W. P.Semiconductor science and technology. 1987, Vol 2, Num 11, pp 756-758, issn 0268-1242Article

The low-frequency impedance of anodically dissolving semiconductor and metal electrodes : A common origin ?ERNE, B. H; VANMAEKELBERGH, D.Journal of the Electrochemical Society. 1997, Vol 144, Num 10, pp 3385-3392, issn 0013-4651Article

On the electrical impedance due to the anodic dissolution of silicon in HF solutionsVANMAEKELBERGH, D; SEARSON, P. C.Journal of the Electrochemical Society. 1994, Vol 141, Num 3, pp 697-702, issn 0013-4651Article

Recombination in semiconductor electrodes : investigation by the electrical impedance methodVANMAEKELBERGH, D; CARDON, F.Electrochimica acta. 1992, Vol 37, Num 5, pp 837-846, issn 0013-4686Article

Charge carrier dynamics in nanoporous photoelectrodesKELLY, J. J; VANMAEKELBERGH, D.Electrochimica acta. 1998, Vol 43, Num 19-20, pp 2773-2780, issn 0013-4686Conference Paper

A reappraisal of the frequency dependence of the impedance of semiconductor electrodesOSKAM, G; VANMAEKELBERGH, D; KELLY, J. J et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1991, Vol 315, Num 1-2, pp 65-85, issn 0022-0728Article

Studies on the n-GaAs photoanode in aqueous electrolytes. II: Differential capacitance behaviourVANMAEKELBERGH, D; GOMES, W. P; CARDON, F et al.Berichte der Bunsengesellschaft für Physikalische Chemie. 1985, Vol 89, Num 9, pp 994-998, issn 0005-9021Article

Cu₂O: Electrodeposition and characterizationDE JONGH, P. E; VANMAEKELBERGH, D; KELLY, J. J et al.Chemistry of materials. 1999, Vol 11, Num 12, pp 3512-3517, issn 0897-4756Article

Greatly enhanced sub-bandgap photocurrent in porous GaP photoanodesMARIN, F. I; HAMSTRA, M. A; VANMAEKELBERGH, D et al.Journal of the Electrochemical Society. 1996, Vol 143, Num 3, pp 1137-1142, issn 0013-4651Article

The influence of electrodeposited gold on the properties of III-V semiconductor electrodes. I: Results of current-potential measurements on p-GaAsOSKAM, G; VANMAEKELBERGH, D; KELLY, J. J et al.Electrochimica acta. 1993, Vol 38, Num 2-3, pp 291-300, issn 0013-4686Article

Role of decomposition-induced and other surface states in the photoelectrochemical kinetics of n-GaP/Fe²⁺VANMAEKELBERGH, D; RIGOLE, W; GOMES, W. P et al.Journal of the Chemical Society. Faraday Transactions I. 1983, Vol 79, Num 12, pp 2813-2820, issn 0300-9599Article

A schottky barrier junction based on nanometer-scale interpenetrating GaP/gold networksVANMAEKELBERGH, D; KOSTER, A; MARIN, F. I et al.Advanced materials (Weinheim). 1997, Vol 9, Num 7, pp 575-578, issn 0935-9648Article

Impedance spectroscopy at semiconductor electrodes : Review and recent developmentsGOMES, W. P; VANMAEKELBERGH, D.Electrochimica acta. 1996, Vol 41, Num 7-8, pp 967-973, issn 0013-4686Conference Paper

Porous etching: a means to enhance the photoresponse of indirect semiconductorsERNE, B. H; VANMAEKELBERGH, D; KELLY, J. J et al.Advanced materials (Weinheim). 1995, Vol 7, Num 8, pp 739-742, issn 0935-9648Article

Recombination in semiconductor electrodes : investigation by the electrical and optoelectrical impedance methodVANMAEKELBERGH, D; DE WIT, A. R; CARDON, F et al.Journal of applied physics. 1993, Vol 73, Num 10, pp 5049-5057, issn 0021-8979, 1Article