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PROCEEDINGS OF THE AMERICAN LIBRARY ASSOCIATION CONFERENCE PROGRAM ON COLLECTION SECURITY AND LIFE SAFETY, SAN FRANCISCO, JUNE 30, 1981VASI J.1982; LIBR. ARCH. SECUR.; ISSN 0196-0075; USA; DA. 1982; VOL. 4; NO 3; PP. 9-39Article

Trends in staff furnishings for librariesVASI, J.Library trends. 1987, Vol 36, Num 2, pp 377-390, issn 0024-2594Article

DIFFUSION EFFECTS IN THE DOUBLE INJECTION NEGATIVE-RESISTANCE PROBLEMVASI J; WESTGATE CR.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 2; PP. 269-275; BIBL. 16 REF.Serial Issue

RAPID MEASUREMENT OF LIFETIME USING A RAMPED MOS CAPACITOR TRANSIENTTIWARI P; BHAUMIK B; VASI J et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 7; PP. 695-698; BIBL. 15 REF.Article

THE NATURE OF INTRINSIC HOLE TRAPS IN THERMAL SILICON DIOXIDEMANCHANDA L; VASI J; BHATTACHARYYA AB et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4690-4696; BIBL. 29 REF.Article

HOLE TRAPS IN THERMAL SILICON DIOXIDE INTRODUCED BY CHLORINEMANCHANDA L; VASI J; BHATTACHARYYA AB et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 8; PP. 744-747; BIBL. 18 REF.Article

THE EFFECT OF HIGH TEMPERATURE ANNEALING ON THE SPATIAL VARIATION OF BULK LIFETINE NEAR THE SI-SIO2 INTERFACEMANCHANDA L; VASI J; BHATTACHARYYA AB et al.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 10; PP. 1015-1020; BIBL. 32 REF.Article

DETERMINATION OF SURFACE STATE DISTRIBUTION FROM PULSED MOS CAPACITOR TRANSIENTSMANCHANDA L; VASI J; BHATTACHARYYA AB et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 1; PP. 29-32; BIBL. 7 REF.Article

A NOVEL DOUBLE DIELECTRIC TWO PHASE CCD WITH OVERLAPPING GATESCHARI KS; BIMAL MATHUR; VASI J et al.1979; MICROELECTRON. J.; GBR; DA. 1979; VOL. 9; NO 4; PP. 24-26; BIBL. 6 REF.Article

FEED FORWARD DUE TO BARRIER MODULATION IN CHARGE-COUPLED DEVICESMADAN SK; MATHUR B; VASI J et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 8; PP. 1269-1276; BIBL. 7 REF.Article

A two-dimensional numerical simulation of oxide charge buildup in MOS transistors due to radiationVINITA VASUDEVAN; VASI, J.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 3, pp 383-390, issn 0018-9383Article

A simulation of the multiple trapping model for continuous time random walk transportVASUDEVAN, V; VASI, J.Journal of applied physics. 1993, Vol 74, Num 5, pp 3224-3230, issn 0021-8979Article

Radiation-induced interface-state generation in reoxidized nitrided SiO2RAMGOPAL RAO, V; VASI, J.Journal of applied physics. 1992, Vol 71, Num 2, pp 1029-1031, issn 0021-8979Article

ELECTRICAL PROPERTIES OF CDS-SIO2-SI STRUCTURESBHATTACHARYYA AB; NAHAR RK; NAGCHOUDHURI D et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 1; PP. 390-393; BIBL. 6 REF.Article

Creating a library electronic classroomVASI, J; LAGUARDIA, C.Online (Weston, CT). 1994, Vol 18, Num 5, pp 75-84, issn 0146-5422, 8 p.Article

Profiling generation lifetime in an MOS capacitor using a multistep constant-capacitance techniqueLAL, R; VASI, J.Solid-state electronics. 1987, Vol 30, Num 8, pp 801-805, issn 0038-1101Article

A numerical simulation of hole and electron trapping due to radiation in silicon dioxideVASUDEVAN, V; VASI, J.Journal of applied physics. 1991, Vol 70, Num 8, pp 4490-4495, issn 0021-8979Article

Modelling of a depletion-mode MOSFETPARIKH, C. D; VASI, J.Solid-state electronics. 1987, Vol 30, Num 7, pp 699-703, issn 0038-1101Article

A study of radiation effects on reoxidized nitrided oxide MOSFETs including effects on mobilityMALLIK, A; VASI, J; CHANDORKAR, A. N et al.Solid-state electronics. 1993, Vol 36, Num 9, pp 1359-1361, issn 0038-1101Article

Interface state generation due to high-field stressing in MOS oxidesPATRIKAR, R. M; LAL, R; VASI, J et al.Solid-state electronics. 1995, Vol 38, Num 2, pp 477-480, issn 0038-1101Article

Carrier mobility degradation in metal-oxide-semiconductor field-effect transistors due to oxide chargePHANSE, A; SHARMA, D; MALLIK, A et al.Journal of applied physics. 1993, Vol 74, Num 1, pp 757-759, issn 0021-8979Article

Process dependence of breakdown field in thermally nitrided silicon dioxideRAMESH, K; CHANDORKAR, A. N; VASI, J et al.Journal of applied physics. 1991, Vol 70, Num 4, pp 2299-2303, issn 0021-8979Article

Electron trapping and detrapping in thermally nitrided silicon dioxideRAMESH, K; CHANDORKAR, A. N; VASI, J et al.Journal of applied physics. 1989, Vol 65, Num 10, pp 3958-3962, issn 0021-8979Article

The nature of the hole traps in reoxidized nitrided oxide gate dielectricsMALLIK, A; VASI, J; CHANDORKAR, A. N et al.Journal of applied physics. 1993, Vol 74, Num 4, pp 2665-2668, issn 0021-8979Article

Power law model for positive charge build-up in silicon dioxide due to high-field stressingPATRIKAR, R. M; LAL, R; VASI, J et al.Solid-state electronics. 1993, Vol 36, Num 5, pp 723-726, issn 0038-1101Article

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