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IGBT gate driver IC with full-bridge output stage using a modified standard CMOS processPEREZ-TOMAS, A; JORDA, X; GODIGNON, P et al.Microelectronics journal. 2004, Vol 35, Num 8, pp 659-666, issn 0959-8324, 8 p.Article

Dynamic latch-up in advanced LIGBT structures at high operating temperaturesVELLVEHI, M; JORDA, X; FLORES, D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 304-308, issn 0921-5107Conference Paper

Study of recoil implantation technique for deep low doped junction formation with aluminumGODIGNON, P; MORVAN, E; MONTSERRAT, J et al.Microelectronic engineering. 1998, Vol 40, Num 2, pp 99-109, issn 0167-9317Article

Comparison of temperature limits for Trench silicon IGBT technologies for medium power applicationsPERPINA, X; JORDA, X; LEON, J et al.Microelectronics and reliability. 2014, Vol 54, Num 9-10, pp 1839-1844, issn 0026-2714, 6 p.Conference Paper

Hot Spot Detection in Integrated Circuits Laterally Accessing to their Substrate Using a Laser BeamPERPINA, X; ALTET, J; JORDA, X et al.International workshop on thermal investigations of ICs and systems. 2010, pp 117-121, isbn 978-2-35500-012-6, 1Vol, 5 p.Conference Paper

Self-heating experimental study of 600 V PT-IGBTs under low dissipation energiesPERPINA, X; JORDA, X; MESTRES, N et al.Microelectronics journal. 2004, Vol 35, Num 10, pp 841-847, issn 0959-8324, 7 p.Conference Paper

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Experimental and simulation results on the switching behaviour of lateral insulated gate bipolar transistor structuresVELLVEHI, M; JORDA, X; GODIGNON, P et al.Microelectronics journal. 1999, Vol 30, Num 6, pp 583-589, issn 0959-8324Conference Paper

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Temperature effects on the ruggedness of SiC Schottky diodes under surge currentLEON, J; PERPINA, X; BANU, V et al.Microelectronics and reliability. 2014, Vol 54, Num 9-10, pp 2207-2212, issn 0026-2714, 6 p.Conference Paper

Design methodologies for reliability of SSL LED boards : THERMAL, MECHANICAL AND MULTI-PHYSICS SIMULATION AND EXPERIMENTS IN MICRO-ELECTRONICS AND MICRO-SYSTEMSJAKOVENKO, J; FORMANEK, J; GASSE, A et al.Microelectronics and reliability. 2013, Vol 53, Num 8, pp 1076-1083, issn 0026-2714, 8 p.Conference Paper

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Radial confinement in lateral power devicesKRISHNAN, S; DE SOUZA, M. M; NARAYANAN, E. M. S et al.Microelectronics journal. 2001, Vol 32, Num 5-6, pp 481-484, issn 0959-8324Article

Double gate MOS-thyristor devices with and without forward bias safe operating area capability : the insulated base MOS-controlled thyristor and the dual MOS-gated thyristorFLORES, D; GODIGNON, P; JORDA, X et al.Microelectronics journal. 1999, Vol 30, Num 6, pp 591-597, issn 0959-8324Conference Paper

Numerical simulation of the insulated base MOS-controlled thyristorFLORES, D; GODIGNON, P; VELLVEHI, M et al.Microelectronics journal. 1996, Vol 27, Num 2-3, pp 177-180, issn 0959-8324Article

Low-cost and versatile thermal test chip for power assemblies assessment and thermometric calibration purposesJORDA, X; PERPINA, X; VELLVEHI, M et al.Applied thermal engineering. 2011, Vol 31, Num 10, pp 1664-1672, issn 1359-4311, 9 p.Article

Hot-Spot Detection in Integrated Circuits by Substrate Heat-Flux SensingPERPINA, X; ALTET, J; JORDA, X et al.IEEE electron device letters. 2008, Vol 29, Num 10, pp 1142-1144, issn 0741-3106, 3 p.Article

Analysis of 1.2 kV JBS rectifiers fabricated in 4H-SiCPEREZ, R; MESTRES, N; VELLVEHI, M et al.Semiconductor science and technology. 2006, Vol 21, Num 5, pp 670-676, issn 0268-1242, 7 p.Article

Design of an RF LDMOSFET with deep drift and hot carrier immunity using time domain approachCAO, G; SANKARA NARAYANAN, E. M; DE SOUZA, M. M et al.International Symposium on Power Semiconductor Devices & ICs. 2004, pp 241-244, isbn 4-88686-060-5, 4 p.Conference Paper

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Modellization of the breakdown voltage of four-layer punch-through TVS diodesURRESTI, J; HIDALGO, S; FLORES, D et al.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 1, 159-162Conference Paper

A linear heat generation thermal model for ldmos basic cell self-heating analysis in transient stateROIG, J; FLORES, D; HIDALGO, S et al.International workshop on thermal investigations of ICs and systems. 2003, pp 139-142, isbn 2-84813-020-2, 1Vol, 4 p.Conference Paper

Lateral spread of implanted ion distributions in 6H-SiC : simulationMORVAN, E; MESTRES, N; PASCUAL, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 61-62, pp 373-377, issn 0921-5107Conference Paper