ELECTRON ENERGY LOSS MEASUREMENTS ON PYRENE (C₁₆H₁₀) VAPOR.VENGHAUS H; HINZ HJ.1976; J. CHEM. PHYS.; U.S.A.; DA. 1976; VOL. 64; NO 1; PP. 30-33; BIBL. 18 REF.Article

EXCITATION INTENSITY DEPENDENCE OF SHALLOW DONOR BOUND EXCITON LUMINESCENCE IN N-GAAS.VENGHAUS H.1978; J. LUMINESC.; NETHERL.; DA. 1978; VOL. 16; NO 3; PP. 331-341; BIBL. 18 REF.Article

VALENCE BAND PARAMETERS OF CUBIC ZINC SELENIDE DERIVED FROM MAGNETOREFLECTANCE OF THE GAMMA ₆-GAMMA ₈ EXCITON.VENGHAUS H.1978; SOLID STATE COMMUNIC.; G.B.; DA. 1978; VOL. 26; NO 3; PP. 199-202; BIBL. 19 REF.Article

INFRARED REFLECTANCE AND DIELECTRIC PROPERTIES OF PYROLYTIC GRAPHITE FOR E/C POLARIZATION.VENGHAUS H.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 81; NO 1; PP. 221-225; ABS. ALLEM.; BIBL. 17 REF.Article

REDETERMINATION OF THE DIELECTRIC FUNCTION OF GRAPHITE.VENGHAUS H.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 71; NO 2; PP. 609-614; ABS. ALLEM.; BIBL. 13 REF.Article

WAVE VECTOR DEPENDENCE OF THE ELECTRON ENERGY LOSS FUNCTIONS OF GRAPHITE.VENGHAUS H.1974; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1974; VOL. 66; NO 1; PP. 145-150; ABS. ALLEM.; BIBL. 12 REF.Article

Integrated optics for optical communicationVENGHAUS, H.Glastechnische Berichte. 1989, Vol 62, Num 5, pp 175-181, issn 0017-1085Conference Paper

ELECTRON ENERGY LOSS MEASUREMENTS ON P-TERPHENYL (C₁₈H₁₄) SINGLE CRYSTALS AND VAPOR.VENGHAUS H; HINZ HJ.1975; J. CHEM. PHYS.; U.S.A.; DA. 1975; VOL. 62; NO 12; PP. 4937-4940; BIBL. 14 REF.Article

Determination of electron effective mass, bandgap energy and excited impurity states by photoluminescence experimentsVENGHAUS, H.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 34, pp 6229-6243, issn 0022-3719Article

SHALLOW ACCEPTOR BOUND EXCITON AND FREE EXCITON STATES IN HIGH-PURITY ZINC TELLURIDEVENGHAUS H; DEAN PJ.1979; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1979; VOL. 31; NO 11; PP. 897-900; BIBL. 12 REF.Article

Spatial dependence of dominant wavelength of GaAs_0.35P_0.65: N light emitting diodesVENGHAUS, H.Applied physics. A, Solids and surfaces. 1984, Vol 34, Num 1, pp 13-17, issn 0721-7250Article

SHALLOW-ACCEPTOR DONOR, FREE-EXCITON, AND BOUND-EXCITON STATES IN HIGH-PURITY ZINC TELLURIDEVENGHAUS H; DEAN PS.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 4; PP. 1596-1609; BIBL. 37 REF.Article

VALENCE-BAND PARAMETERS AND G FACTORS OF ZNTE FROM FREE-EXCITON MAGNETOREFLECTANCEVENGHAUS H; JUSSERAND B.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 2; PP. 932-944; BIBL. 43 REF.Article

THE DIELECTRIC FUNCTION OF GES SINGLE CRYSTALS DETERMINED BY ELECTRON ENERGY LOSS SPECTROSCOPY.VENGHAUS H; BUCHNER U.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 72; NO 2; PP. 603-607; ABS. ALLEM.; BIBL. 11 REF.Article

ELECTRON ENERGY LOSS MEASUREMENTS ON FLUORENE (C₁₃H₁₀) VAPOUR AND SINGLE CRYSTALS.VENGHAUS H; HINZ HJ.1974; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1974; VOL. 65; NO 1; PP. 239-247; ABS. ALLEM.; BIBL. 22 REF.Article

Auswirkungen einer niedrigen Schallschutzwand im unmittelbaren Gleisbereich einer Bundesbahnstrecke = Effet d'un mur bas anti-bruit en emprise ferroviaire = Effectiveness of a low noise barrier, placed next to the rails of a railway lineHOLZMANN, E; VENGHAUS, H.VDI-Berichte. 1989, Num 742, pp 429-437, issn 0083-5560Conference Paper

ELECTROOPTICAL PROPERTIES OF AC THIN-FILM ELECTROLUMINESCENT DEVICESTHEIS D; VENGHAUS H; EBBINGHAUS G et al.1982; SIEMENS FORSCHUNGS - UND ENTWICKLUNGSBERICHTE; ISSN 0370-9736; DEU; DA. 1982; VOL. 11; NO 5; PP. 265-270; BIBL. 13 REF.Article

Degradation induced changes of characteristic parameters of GaAs: Si infrared emitting diodesVENGHAUS, H; KRÄMER, G.Solid-state electronics. 1989, Vol 32, Num 3, pp 225-234, issn 0038-1101Article

BAND PARAMETERS FOR ZINC TELLURIDE FROM BOUND EXCITON AND DONOR-ACCEPTOR PAIR EXCITATION LUMINESCENCEHERBERT DC; DEAN PJ; VENGHAUS H et al.1978; J. PHYS. C; GBR; DA. 1978; VOL. 11; NO 17; PP. 3641-3650; BIBL. 13 REF.Article

MAGNETOREFLECTANCE OF THE GAMMA ₆-GAMMA ₈ EXCITON IN ZNTE.VENGHAUS H; SIMMONDS PE; LAGOIS J et al.1977; SOLID. STATE COMMUNIC.; G.B.; DA. 1977; VOL. 24; NO 1; PP. 5-9; BIBL. 25 REF.Article

EXCITED DONOR AND ACCEPTOR STATES IN ZINC TELLURIDE.VENGHAUS H; DEAN PJ; SIMMONDS PE et al.1978; Z. PHYS. B; DEU; DA. 1978; VOL. 30; NO 2; PP. 125-128; BIBL. 19 REF.Article

MICROSTRUCTURE AND LIGHT EMISSION OF AC-THIN FILM ELECTROLUMINESCENT DEVICESVENGHAUS H; THEIS D; OPPOLZER H et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 6; PP. 4146-4151; BIBL. 23 REF.Article

Orientation-dependent metalorganic vapor phase epitaxy regrowth on GaInAsP/InP laser structuresFIDORRA, F; HARDE, P; VENGHAUS, H et al.Applied physics letters. 1989, Vol 55, Num 13, pp 1321-1323, issn 0003-6951, 3 p.Article

Meander-type wavelength demultiplexer with weighted couplingVENGHAUS, H; BORNHOLDT, C; KAPPE, F et al.Applied physics letters. 1992, Vol 61, Num 17, pp 2018-2020, issn 0003-6951Article

Monolithic integrated wavelength duplexer-receiver on InPBORNHOLDT, C; TROMMER, D; UNTERBÖRSCH, G et al.Journal of lightwave technology. 1993, Vol 11, Num 3, pp 408-415, issn 0733-8724Article