AVALANCHE-INJECTED HOLE CURRENT IN SIO₂VERWEY JF.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 9; PP. 417-419; BIBL. 16 REF.Serial Issue

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AVALANCHE-INJECTED ELECTRON CURRENTS IN SIO₂ AT HIGH INJECTION DENSITIES.VERWEY JF; DE MAAGT BJ.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 9; PP. 963-971; BIBL. 22 REF.Article

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