Formation and electronic structure of terbium slicide epitaxially ron on Si(111)VEUILLEN, J.-Y; KENNOU, S; NGUYEN TAN, T. A et al.Solid state communications. 1991, Vol 79, Num 10, pp 795-798, issn 0038-1098Article

Oxidation of TaSi₂ thin films of polycristalline SiNGUYEN TAN, T. A; GUERFI, N; VEUILLEN, J. Y et al.Applied surface science. 1989, Vol 41-42, Num 1-4, pp 266-271, issn 0169-4332Conference Paper

Direct determination of Fermi wave vector in the blue bronze by means of angle-resolved photoemisison spectroscopyVEUILLEN, J. Y; CINTI, R. C; AL KHOURY NEMEH, E et al.Europhysics letters (Print). 1987, Vol 3, Num 3, pp 355-359, issn 0295-5075Article

Investigation of the Ni(111) Shockley-like surface state using confinement to artificial nanostructuresPONS, S; MALLET, P; MAGAUD, L et al.Europhysics letters (Print). 2003, Vol 61, Num 3, pp 375-381, issn 0295-5075, 7 p.Article

Mössbauer studies of the charge-density-wave state of ⁵⁷Fe-K_0.30MoO₃VEUILLEN, J. Y; CHEVALIER, R; MARCUS, J et al.Solid state communications. 1987, Vol 63, Num 7, pp 587-590, issn 0038-1098Article

Scanning Tunneling Microscopy investigation of the graphene/6H-SiC(0001 ) (3 x 3) interfaceHIEBEL, F; MALLET, P; VARCHON, F et al.Solid state communications. 2009, Vol 149, Num 27-28, pp 1157-1160, issn 0038-1098, 4 p.Conference Paper

STM study of dynamical effects on submonolayer phases of Pb/Si(1 1 1)CUSTANCE, O; BRIHUEGA, I; VEUILLEN, J.-Y et al.Surface science. 2001, Vol 482-85, pp 878-885, issn 0039-6028, 2Conference Paper

The influence of growth techniques on the structure of epitaxial ErSi_1.7 on Si(111)LOLLMAN, D. B. B; NGUYEN TAN, T. A; VEUILLEN, J.-Y et al.Applied surface science. 1993, Vol 65-66, pp 704-711, issn 0169-4332Conference Paper

Surface electronic structure of erbium silicide epitaxially grown on Si(111)VEUILLEN, J.-Y; MAGAUD, L; LOLLMAN, D. B. B et al.Surface science. 1992, Vol 269-270, pp 964-969, issn 0039-6028, bConference Paper

Empty states of the Ni/Si(111)7×7 interfaceVEUILLEN, J.-Y; NGUYEN TAN, T. A; D'ADDATO, S et al.Surface science. 1991, Vol 251-52, pp 258-261, issn 0039-6028, 4 p.Conference Paper

Interface structure of graphene on SiC: an ab initio and STM approachVEUILLEN, J.-Y; HIEBEL, F; MAGAUD, L et al.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 37, issn 0022-3727, 374008.1-374008.15Article

Scanning tunneling microscopy study of the Si(111)-(√3 x √3)-Pb mosaic phaseGOMEZ-RODRIGUEZ, J. M; VEUILLEN, J.-Y; CINTI, R. C et al.Surface science. 1997, Vol 377-79, pp 45-49, issn 0039-6028Conference Paper

Atomic structure of epitaxial Er silicides grown on Si(111) studied by surface extended X-ray absorption fine structureTUILIER, M.-H; PIRRI, C; WETZEL, P et al.Surface science. 1994, Vol 307-309, pp 710-715, issn 0039-6028, bConference Paper

A photoemission study of the interdiffusion of Si in Er films deposited on Si(111) (7x7) at room temperatureLOLLMAN, D. B. B; NGUYEN TAN, T. A; VEUILLEN, J.-Y et al.Surface science. 1992, Vol 269-270, pp 959-963, issn 0039-6028, bConference Paper

Growth and morphology of epitaxial ErSi_1.7 films on Si(111)7×7 studied by scanning tunneling microscopyMARTIN-GAGO, J. A; GOMEZ-ROGRIGUEZ, J. M; VEUILLEN, J. Y et al.Surface science. 1996, Vol 366, Num 3, pp 491-500, issn 0039-6028Article

Study of the Co/Si(111) interface formation using electron energy loss spectroscopyBENSAOULA, A; VEUILLEN, J. Y; NGUYEN TAN, T. A et al.Surface science. 1991, Vol 241, Num 3, pp 425-430, issn 0039-6028, 6 p.Article

Structural and chemical analysis of all sputtered a-Si/a-C multilayersECH-CHAMIKH, E; AZIZAN, M; AMEZIANE, E. L et al.Solar energy materials and solar cells. 1993, Vol 29, Num 2, pp 131-137, issn 0927-0248Article

Structure of epitaxial gadolinium silicide thin films obtained by Gd evaporation and by Gd and Si coevaporation on Si(111)PESCHER, C; ERMOLIEFF, A; VEUILLEN, J. Y et al.Solid state communications. 1995, Vol 94, Num 10, pp 837-841, issn 0038-1098Article

Hindered electronic transport in two-dimensional metallic ErSi₂ nanoscale islands on Si(111) : An STM studyBRIHUEGA, I; DUPONT-FERRIER, E; MALLET, P et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 20, pp 205309.1-205309.7, issn 1098-0121Article

Oxidation of thin erbium and erbium silicide overlayers in contact with silicon oxide films thermally grown on siliconKENNOU, S; LADAS, S; GRIMALDI, M. G et al.Applied surface science. 1996, Vol 102, pp 142-146, issn 0169-4332Conference Paper

BIS investigation of Pd-Si(111) 7 × 7 interface formationVEUILLEN, J. Y; NGUYEN, T. T; CINTI, R et al.Vacuum. 1990, Vol 41, Num 1-3, pp 702-704, issn 0042-207X, 3 p.Conference Paper

Heteroepitaxy of metallic and semiconducting silicides on siliconCHERIEF, N; CINTI, R; DE CRESCENZI, M et al.Applied surface science. 1989, Vol 41-42, Num 1-4, pp 241-252, issn 0169-4332Conference Paper

Extended synchroton X-ray reflectivity study of a Sm-based layer buried into CdTe(001)BOUDET, N; EYMERY, J; RENAUD, G et al.Surface science. 1995, Vol 327, Num 3, pp L515-L520, issn 0039-6028Article

Electronic properties of epitaxial erbium silicideVEUILLEN, J. Y; NGUYEN TAN, T. A; LOLLMAN, D. B. B et al.Surface science. 1991, Vol 251-52, pp 432-436, issn 0039-6028, 5 p.Conference Paper

Charge density wave properties of the quasi two-dimensional purple molybdenum bronze KMo₆O₁₇BALASKA, H; DUMAS, J; GUYOT, H et al.Solid state sciences. 2005, Vol 7, Num 6, pp 690-698, issn 1293-2558, 9 p.Article