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COMPARISON OF GAAS IMPATT DESIGNS FOR 20 GHZBERENZ JJ; VICHR M; FANK FB et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 21; PP. 694-695; BIBL. 3 REF.Article
Nondestructive measurement of indium content in semi-insulating GaAs substrates and ingotsKIRILLOV, D; VICHR, M; POWELL, R. A et al.Applied physics letters. 1987, Vol 50, Num 5, pp 262-264, issn 0003-6951Article