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Results 1 to 25 of 6007

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PHOTOELECTROCHEMICAL DEPOSITION OF METALS ONTO P-SILICON USING AN INTERNAL CELLROSE TL; LONGENDORFER DH; RAUH RD et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 2; PP. 193-195; BIBL. 6 REF.Article

20-GHZ BANDWIDTH GAAS PHOTODIODEWANG SY; BLOOM DM; COLLINS DM et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 2; PP. 190-192; BIBL. 5 REF.Article

PHOTOTRANSISTORS IN DIGITAL OPTICAL COMMUNICATIONS SYSTEMS FOR 1-1.6 MU M WAVELENGTHBRAIN MC; SMITH DR.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 18; PP. 772-774; BIBL. 9 REF.Article

AUTOMATIC START-UP TECHNIQUE FOR COMPLEMENTARY PTAT CURRENT GENERATORSHART BL.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 18; PP. 776-777; BIBL. 6 REF.Article

ELEKTRONISCHE EIGENSCHAFTEN SKALIERTER MOS-TRANSISTOREN FUER VISI-SCHALTKREISE = CARACTERISTIQUES ELECTRONIQUES DES TRANSISTORS MOSMOESCHWITZER A.1983; NACHRICHTENTECHNIK. ELEKTRONIK; ISSN 0323-4657; DDR; DA. 1983; VOL. 33; NO 3; PP. 95-99; ABS. RUS/ENG; BIBL. 17 REF.Article

PHOTOVOLTAIC PROPERTIES OF CADMIUM SULFIDE/TRIVALENT-METAL PHTHALOCYANINE HETEROJUNCTION DEVICESAH MEE HOR; LOUTFY RO; CHENG KUO HSIAO et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 2; PP. 165-167; BIBL. 10 REF.Article

SIMPLE METHOD FOR THE SPECTRAL CONTROL OF MEROCYANINE PHOTODIODESIRIYAMA K; YOSHIURA M.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 2; PP. 206-207; BIBL. 9 REF.Article

INTEGRATED MOS FOUR-QUADRANT ANALOGUE MULTIPLIER USING SWITCHED-CAPACITOR TECHNIQUEYASUMOTO M; ENOMOTO T.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 18; PP. 769-771; BIBL. 4 REF.Article

EFFECTS OF MICROWAVE RADIATION ON TWO STRONGLY COUPLED INDIUM MICROBRIDGESDAI YD; YEH WJ; KAO YH et al.1982; JOURNAL OF LOW TEMPERATURE PHYSICS; ISSN 0022-2291; USA; DA. 1982; VOL. 48; NO 5-6; PP. 373-382; BIBL. 6 REF.Article

CHEMICAL IMPURITIES AND STRUCTURAL IMPERFECTIONS IN SEMICONDUCTOR SILICON. IHUFF HR.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 2; PP. 89-95; BIBL. 43 REF.Article

DESIGN MODEL FOR BULK CMOS SCALING ENABLING ACCURATE LATCHUP PREDICTIONWIEDER AW; WERNER C; HARTER J et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 3; PP. 240-245; BIBL. 11 REF.Article

TRANSIT AND STORAGE TIMES OF BIPOLAR TRANSISTORS IN A VLSI ENVIRONMENTROFAIL SS.1983; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1983; VOL. 130; NO 3; PP. 151-152; BIBL. 7 REF.Article

A SIMPLIFIED FULLY IMPLANTED BIPOLAR VLSI TECHNOLOGYKO WC; GWO TC; YEUNG PH et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 3; PP. 236-239; BIBL. 13 REF.Article

THE CHALLENGE OF THE VLSI TECHNIQUE TO TELECOMMUNICATIONS SYSTEMSGOSER KF.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 406-410; BIBL. 31 REF.Article

A 1-MU M BIPOLAR VLSI TECHNOLOGYEVANS SA; MORRIS SA; ARLEDGE LA JR et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 438-444; BIBL. 11 REF.Article

BIPOLAR STRUCTURES FOR BIMOS TECHNOLOGIESHAMDY EZ; ELMASRY MI.1980; I.E.E.E. J. SOLID STATE CIRCUITS; USA; DA. 1980; VOL. 15; NO 2; PP. 229-236; BIBL. 19 REF.Article

MANAGING VLSI COMPLEXITY: AN OUTLOOKSEQUIN CH.1983; PROCEEDINGS OF THE IEEE; ISSN 0018-9219; USA; DA. 1983; VOL. 71; NO 1; PP. 149-166; BIBL. 87 REF.Article

A TRANSMISSION LINE MODEL OF A VLSI PACKAGEREED DJ; SHEALY DL.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 2; PP. 127-131; BIBL. 5 REF.Article

COMPLETELY ITERATIVE, PIPELINED MULTIPLIER ARRAY SUITABLE FOR VLSIMCCANNY JV; MCWHIRTER JG.1982; IEE PROC., G; ISSN 0143-7089; GBR; DA. 1982; VOL. 129; NO 2; PP. 40-46; BIBL. 23 REF.Article

LES PERSPECTIVES DANS LE DOMAINE DU TEST ET DE LA TESTABILITE DES CIRCUITS A TRES HAUTE INTEGRATIONSAUCIER G.1982; ONDE ELECTRIQUE; ISSN 0030-2430; FRA; DA. 1982; VOL. 62; NO 3; PP. 76-87; ABS. ENG; BIBL. 36 REF.Article

NEEDED: A MIRACLE SLICE FOR VLSI FABRICATIONHEILMEIER GH.1979; I.E.E.E. SPECTRUM; USA; DA. 1979; VOL. 16; NO 3; PP. 45Article

NONPLANAR VLSI DEVICE ANALYSIS USING THE SOLUTION OF POISSON'S EQUATIONGREENFIELD JA; DUTTON RW.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1520-1532; BIBL. 30 REF.Article

AN ALGORITHM TO COMPACT A VLSI SYMBOLIC LAYOUT WITH MIXED CONSTRAINTSYUH ZEN LIAO; WONG CK.1983; IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS; ISSN 50629X; USA; DA. 1983; VOL. 2; NO 2; PP. 62-69; BIBL. 11 REF.Article

ASYNCHRONOUS AND CLOCKED CONTROL STRUCTURES FOR VSLI BASED INTERCONNECTION NETWORKSWANN DF; FRANKLIN MA.1983; IEEE TRANSACTIONS ON COMPUTERS; ISSN 0018-9340; USA; DA. 1983; VOL. 32; NO 3; PP. 284-293; BIBL. 32 REF.Article

CVD TUNGSTEN INTERCONNECT AND CONTACT BARRIER TECHNOLOGY FOR VLSIMILLER NE; BEINGLASS I.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 12; PP. 85-90; BIBL. 17 REF.Article

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