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PHOTOELECTROCHEMICAL DEPOSITION OF METALS ONTO P-SILICON USING AN INTERNAL CELLROSE TL; LONGENDORFER DH; RAUH RD et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 2; PP. 193-195; BIBL. 6 REF.Article

20-GHZ BANDWIDTH GAAS PHOTODIODEWANG SY; BLOOM DM; COLLINS DM et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 2; PP. 190-192; BIBL. 5 REF.Article

PHOTOTRANSISTORS IN DIGITAL OPTICAL COMMUNICATIONS SYSTEMS FOR 1-1.6 MU M WAVELENGTHBRAIN MC; SMITH DR.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 18; PP. 772-774; BIBL. 9 REF.Article

AUTOMATIC START-UP TECHNIQUE FOR COMPLEMENTARY PTAT CURRENT GENERATORSHART BL.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 18; PP. 776-777; BIBL. 6 REF.Article

An overview and a selected bibliography of the VLSI/microprocessor-based data modem designMEDINA, D; MILUTINOVIC, V.Microprocessing and microprogramming. 1985, Vol 16, Num 2-3, pp 143-161, issn 0165-6074Article

PHOTOVOLTAIC PROPERTIES OF CADMIUM SULFIDE/TRIVALENT-METAL PHTHALOCYANINE HETEROJUNCTION DEVICESAH MEE HOR; LOUTFY RO; CHENG KUO HSIAO et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 2; PP. 165-167; BIBL. 10 REF.Article

SIMPLE METHOD FOR THE SPECTRAL CONTROL OF MEROCYANINE PHOTODIODESIRIYAMA K; YOSHIURA M.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 2; PP. 206-207; BIBL. 9 REF.Article

INTEGRATED MOS FOUR-QUADRANT ANALOGUE MULTIPLIER USING SWITCHED-CAPACITOR TECHNIQUEYASUMOTO M; ENOMOTO T.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 18; PP. 769-771; BIBL. 4 REF.Article

The influence of boundary locations on wiring capacitance simulationSHIGYO, N; FUKUDA, S; KATO, K et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 6, pp 1171-1174, issn 0018-9383, 4 p.Article

EFFECTS OF MICROWAVE RADIATION ON TWO STRONGLY COUPLED INDIUM MICROBRIDGESDAI YD; YEH WJ; KAO YH et al.1982; JOURNAL OF LOW TEMPERATURE PHYSICS; ISSN 0022-2291; USA; DA. 1982; VOL. 48; NO 5-6; PP. 373-382; BIBL. 6 REF.Article

SPECIAL ISSUE ON THE 2011 SYMPOSIUM ON VLSI CIRCUITSMAKOTO NAGATA; VIVEK DE.IEEE journal of solid-state circuits. 2012, Vol 47, Num 4, issn 0018-9200, 272 p.Conference Proceedings

Special Issue on the 2010 Symposium on VLSI CircuitsAMERASEKERA, Ajith; NAGATA, Makoto.IEEE journal of solid-state circuits. 2011, Vol 46, Num 4, issn 0018-9200, 275 p.Conference Proceedings

ELEKTRONISCHE EIGENSCHAFTEN SKALIERTER MOS-TRANSISTOREN FUER VISI-SCHALTKREISE = CARACTERISTIQUES ELECTRONIQUES DES TRANSISTORS MOSMOESCHWITZER A.1983; NACHRICHTENTECHNIK. ELEKTRONIK; ISSN 0323-4657; DDR; DA. 1983; VOL. 33; NO 3; PP. 95-99; ABS. RUS/ENG; BIBL. 17 REF.Article

RADIATION EFFECTS ON MODULATION-DOPED GAAS-ALXGA1-XAS HETEROSTRUCTURESTSUI DC; GOSSARD AC; DOLAN GJ et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 2; PP. 180-182; BIBL. 12 REF.Article

CREATING THE INTEGRATED ENGINEERING DESIGN OFFICEJONES H.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 6; PP. 15-17Article

The VLSI circuit test problem ― a tutorialHAWKINS, C. F; NAGLE, H. T; FRITZEMEIER, R. R et al.IEEE transactions on industrial electronics (1982). 1989, Vol 36, Num 2, pp 111-116, issn 0278-0046Article

Supercomputers and VLSI: The effect of large-scale integration on computer architectureSNYDER, L.Advances in computers. 1984, Vol 23, pp 1-33, issn 0065-2458Article

Placement algorithms for custom VLSISUPOWIT, K. J; SLUTZ, E. A.Computer-aided design. 1984, Vol 16, Num 1, pp 45-50, issn 0010-4485Article

Three-dimensional VLSI: a case studyROSENBERG, A. L.Journal of the Association for Computing Machinery. 1983, Vol 30, Num 3, pp 397-416, issn 0004-5411Article

CHEMICAL IMPURITIES AND STRUCTURAL IMPERFECTIONS IN SEMICONDUCTOR SILICON. IHUFF HR.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 2; PP. 89-95; BIBL. 43 REF.Article

A high-storage capacity content-addressable memory and its learning algorithmVERLEYSEN, M; SIRLETTI, B; VANDEMEULEBROECKE, A et al.IEEE transactions on circuits and systems. 1989, Vol 36, Num 5, pp 762-766, issn 0098-4094, 5 p.Article

TRANSIT AND STORAGE TIMES OF BIPOLAR TRANSISTORS IN A VLSI ENVIRONMENTROFAIL SS.1983; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1983; VOL. 130; NO 3; PP. 151-152; BIBL. 7 REF.Article

DESIGN MODEL FOR BULK CMOS SCALING ENABLING ACCURATE LATCHUP PREDICTIONWIEDER AW; WERNER C; HARTER J et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 3; PP. 240-245; BIBL. 11 REF.Article

A NEW PACKAGE-RELATED FAILURE MECHANISM FOR LEADLESS CERAMIC CHIP CARRIERS (LC-3S) SOLDER-ATTACHED TO ALUMINA SUBSTRATESHOWARD RT; SOBECK SW; SANETRA C et al.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 2; PP. 115-122; BIBL. 16 REF.Article

PENETRATION DU CHAMP ELECTRIQUE DANS LE SUPRACONDUCTEUR DE MICROPONTS JOSEPHSONAMATUNI L EH; GUBANKOV VN; ZAJTSEV AV et al.1982; ZURNAL EKSPERIMENTAL'NOJ I TEORETICESKOJ FIZIKI; ISSN 0044-4510; SUN; DA. 1982; VOL. 83; NO 5; PP. 1851-1863; ABS. ENG; BIBL. 19 REF.Article

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