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CAPACITANCE-VOLTAGE CHARACTERISTICS OF AL/AL2O3/P-GAAS METAL-OXIDE-SEMICONDUCTOR DIODESHAYASHI H; KIKUCHI K; YAMAGUCHI T et al.1980; APPL. PHYS. LETTERS; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 4; PP. 404-406; BIBL. 23 REF.Article

THE COMPLETE DOPING PROFILE USING MOS CV TECHNIQUESHI TRON LIN; REUTER J.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 343-351; BIBL. 21 REF.Article

CAPACITANCE-VS-VOLTAGE CHARACTERISTICS OF ZNO VARISTORSMUKAE K; TSUDA K; NAGASAWA I et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 6; PP. 4475-4476; BIBL. 14 REF.Article

VARICAP WITH STEPLIKE C-V CHARACTERISTICSPEYKOV PH.1978; C.R. ACAD. BULG. SCI.; BGR; DA. 1978; VOL. 31; NO 8; PP. 961-962; BIBL. 1 REF.Article

EFFET DES ETATS LIMITROPHES SUR LES CARACTERISTIQUES ELECTROSTATIQUES DES STRUCTURES METAL-SEMICONDUCTEUR 1-DIELECTRIQUE-SEMICONDUCTEUR 2SYSOEV BI; BEZRYADIN NN; SYNOROV VF et al.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 4; PP. 355-361; BIBL. 8 REF.Article

APPARENT THRESHOLD CHARACTERISTICS OF PRETILTED LIQUID CRYSTAL CELLS.SHIMODA S; MADA H; KOBAYASHI S et al.1978; JAP. J. APPL. PHYS.; JPN; DA. 1978; VOL. 17; NO 8; PP. 1359-1364; BIBL. 11 REF.Article

USING THE C-V CURVE OF AN MIS DIODE TO EXAMINE THE TRAPPING LEVELS IN A SEMICONDUCTORS CONTAINING MANY DISCRETE TRAPSCOOK RK; KASOLD JP; JONES KA et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 4; PP. 391-397; BIBL. 34 REF.Article

PROPERTIES OF MOS STRUCTURES WITH A RESISTIVE GATE ELECTRODE.PEYKOV PH.1978; BULG. J. PHYS.; BGR; DA. 1978; VOL. 5; NO 1; PP. 63-70; ABS. RUS; BIBL. 4 REF.Article

METHODES DE CALCUL DE LA CHARGE DANS LE VOLUME DU DIELECTRIQUE D'UNE STRUCTURE METAL-DIELECTRIQUE-SEMICONDUCTEUR D'APRES SA CARACTERISTIQUE C-V.POPOV VD.1978; MIKROELEKTRONIKA; SUN; DA. 1978; VOL. 7; NO 4; PP. 353-360; BIBL. 15 REF.Article

A REEVALUATION OF THE MEANING OF CAPACITANCE PLOTS FOR SCHOTTKY-BARRIER-TYPE DIODESFONASH SJ.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 1966-1975; BIBL. 9 REF.Article

DIELECTRIC PROPERTIES OF AL2IN12S21ETLINGER B.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 53; NO 1; PP. K35-K38; BIBL. 7 REF.Article

INTERFACIAL POLARIZATION IN NACL EXAMINED IN SUPERIMPOSED A.C. AND D.C. VOLTAGEJONOVA A.1979; ACTA PHYS. SLOV.; CSK; DA. 1979; VOL. 29; NO 4; PP. 264-275; ABS. RUS; BIBL. 17 REF.Article

EFFECT OF THE PREOXIDATIVE CHEMICAL TREATMENT ON THE QUALITY OF THE ACTIVE OXIDE IN MOS STRUCTURESPETKOV M; KAMENOVA M; GRUNCHAROV S et al.1978; BULG. J. PHYS.; BGR; DA. 1978; VOL. 5; NO 6; PP. 588-593; ABS. RUS; BIBL. 7 REF.Article

ELECTRICAL AND CHARGE STORAGE CHARACTERISTICS OF THE TANALUM OXIDE-SILICON DIOXIDE DEVICEANGLE RL; TALLEY HE.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 11; PP. 1277-1283; BIBL. 18 REF.Article

NEW TYPE OF VARACTOR DIODE HAVING STRONGLY NONLINEAR C/V CHARACTERISTICS.SHIROTA S; TOGAWA Y; KANEDA S et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 12; PP. 360-361; BIBL. 3 REF.Article

ACCUMULATION AND DISCHARGING OF THE HOLE CHARGE IN OXIDE LAYERS OF MIS STRUCTURESANUFRIEV EV; GURTOV VA.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 76; NO 1; PP. 107-111; ABS. RUS; BIBL. 11 REF.Article

SEMICONDUCTING PROPERTIES OF ZNO-GRAIN-BOUNDARY-ZNO JUNCTIONS IN CERAMIC VARISTORSLOU LF.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 7; PP. 570-572; BIBL. 9 REF.Article

ANALYSIS OF CAPACITANCE-VOLTAGE MEASUREMENTS ON HEAT-TREATED CU2-2S/CDS HETEROJUNCTIONSHALL RB; SINGH VP.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 10; PP. 6406-6412; BIBL. 16 REF.Article

CHARGE TRANSPORT IN THIN POLYMER FILMS AS SHOWN BY C-V MEASUREMENTS.MAISONNEUVE M; SEGUI Y; BUI AI et al.1977; THIN SOLID FILMS; NETHERL.; DA. 1977; VOL. 44; NO 2; PP. 209-216; BIBL. 11 REF.Article

A NEW ANALYTICAL EXPRESSION FOR THE IMPURITY PROFILE OF HYPERABRUPT VARICAP DIODES.STOJADINOVIC N.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 43; NO 1; PP. K91-K94; BIBL. 8 REF.Article

SOME ELECTRICAL PROPERTIES OF AUXTE/CDTE HETEROJUNCTIONS ON CDTE THICK FILMSTOUSKOVA J; KINDL D; TOUSEK J et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 76; NO 1; PP. 365-374; ABS. RUS; BIBL. 8 REF.Article

CHARGE HYSTERESIS MEASUREMENTS OF MOS STRUCTURESKAPLAN G.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 9; PP. 1103-1105; BIBL. 3 REF.Article

DIPOLE LAYERS AT THE METAL-SIO2 INTERFACEHICKMOTT TW.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 8; PP. 4269-4281; BIBL. 68 REF.Article

MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILINGKROEMER H; WU YI CHIEN; HARRIS JS JR et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 4; PP. 295-297; BIBL. 6 REF.Article

A COMPARISON OF MEASUREMENT TECHNIQUES FOR DETERMINING PHOSPHORUS DENSITIES IN SEMICONDUCTOR SILICONTHURBER WR.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; NO 3; PP. 551-560; BIBL. 18 REF.Article

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