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AN INTENSE ELECTRON BEAM SOURCEYEHESKEL J; GAZIT D; AVIDA R et al.1983; JOURNAL OF PHYSICS D: APPLIED PHYSICS; ISSN 0022-3727; GBR; DA. 1983; VOL. 16; NO 4; PP. 499-504; BIBL. 5 REF.Article

A NEW MICROBRIDGE WITH AN IMPROVED I-V CURVEKOBAYASHI M; MUSHA T.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 2; PART. 1; PP. 258-263; BIBL. 5 REF.Article

OBSERVATIONS OF MULTICONFIGURATIONS FOR A VORTEX MODE IN LONG JOSEPHSON TUNNEL JUNCTIONSSCHEUERMANN M; CHEN JT.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 1; PP. 48-50; BIBL. 19 REF.Article

PARTICULARITES DU TRANSPORT DE COURANT ET DE L'EFFET DE COMMUTATION DANS LES ELEMENTS D'UNE MEMOIRE SEMICONDUCTRICE, INDEPENDANTE DE L'ENERGIE A BASE D'HETEROJONCTION AVEC DIELECTRIQUE MINCE POUR L'EFFET TUNNELTERESHIN SA; MAD'YAROV MR; MALAKHOV BA et al.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 3; PP. 231-237; BIBL. 4 REF.Article

ETUDE DES PROPRIETES D'UN ELEMENT D'UNE MEMOIRE INDEPENDANTE DE L'ENERGIE A BASE D'HETEROJONCTIONS SI-SIO2-SNO2-METAL (SYSTEME MOOS)MAD'YAROV MR; TERESHIN SA; ELINSON MI et al.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 3; PP. 238-243; BIBL. 8 REF.Article

EFFECT OF MICROWAVE RADIATION ON TUNNELING BETWEEN SUPERCONDUCTORS: AN IMPROVED COMPUTATIONYU KW; ENTIN WOHLMAN O.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 3; PP. 1587-1588; BIBL. 3 REF.Article

EXACT J/V CHARACTERISTIC OF AN INSULATOR DIODE WITH THERMAL FREE CARRIERS IN NONCONSTANT MOBILITY REGIMESHARMA YK; RAGHAV VS.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 10; PP. 355-356; BIBL. 5 REF.Article

ANALYSE DES CARACTERISTIQUES COURANT-TENSION DES PHOTOTRANSDUCTEURS AU SILICIUM.BORISOVA NA.1978; IZVEST. AKAD. NAUK S.S.S.R., ENERGET. TRANSP.; SUN; DA. 1978; NO 3; PP. 172-176; BIBL. 5 REF.Article

TECHNIQUE FOR STUDYING THE I-V CHARACTERISTICS OF THE RESONANT JOSEPHSON JUNCTIONJUNG G; BOGUCKI B.1982; JOURNAL OF PHYSICS E: SCIENTIFIC INSTRUMENTS; ISSN 0022-3735; GBR; DA. 1982; VOL. 15; NO 6; PP. 634-635; BIBL. 4 REF.Article

MAGNETRON A GAZ DANS LES CONDITIONS DE PULVERISATION CATHODIQUE INTENSEVLADIMIROV VV; GABOVICH MD; PROTSENKO IM et al.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 4; PP. 831-833; BIBL. 3 REF.Article

ANALYSE DER STROM-SPANNUNGS-KENNLINIEN SPEZIELLER SILIZIUM-FOTODIODEN IM BEREICH KLEINER FLUSSPANNUNGEN = ANALYSE DES CARACTERISTIQUES COURANT TENSION DE PHOTODIODES AU SILICIUM SPECIALES DANS LE DOMAINE DES FAIBLES TENSIONS DIRECTESHARTMANN JD.1980; EXP. TECH. PHYS.; ISSN 0014-4924; DDR; DA. 1980; VOL. 28; NO 4; PP. 347-356; ABS. ENG; BIBL. 11 REF.Article

CARACTERISTIQUES D'EXPLOITATION DU PHOTOELEMENT F-7SHCHERBAKOV LN.1980; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1980; NO 5; PP. 229-230; BIBL. 3 REF.Article

A PROPOSED MODEL OF MISS COMPOSED OF TWO ACTIVE DEVICESADAN A; ZOLOMY I.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 5; PP. 449-456; BIBL. 13 REF.Article

PARAMETRIC AMPLIFICATION ON RF-INDUCED STEPS IN A JOSEPHSON TUNNEL JUNCTIONSOERENSEN OH; PEDERSEN NF; MYGIND J et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2988-2990; BIBL. 8 REF.Article

INFLUENCE OF DIOXYGEN ON THE JUNCTION PROPERTIES OF METALLOPHTHALOCYANINE BASED DEVICESMARTIN M; ANDRE JJ; SIMON J et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2792-2794; BIBL. 33 REF.Article

PARAMETERS OF SOLAR CELL ARRAYSSHECHTER M; APPELBAUM J.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 616-618; BIBL. 5 REF.Article

MICROWAVE-INDUCED VORTEX MOTION IN LONG JOSEPHSON JUNCTIONSHAMASAKI K; YOSHIDA K; IRIE F et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 1; PP. 191-198; BIBL. 21 REF.Article

SATURATION DU COURANT DUE A L'EFFET ACOUSTOELECTRIQUE DANS LE TELLURE A 4,2 KBONDAR VM; RADCHENKO VS.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 11; PP. 2096-2102; BIBL. 15 REF.Article

SUR UNE METHODE DE MESURE DE LA CARACTERISTIQUE COURANT-TENSION DES DIODES A SEMICONDUCTEURSZADDEH VV; GUSEVA EA.1980; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1980; NO 1; PP. 239-240; BIBL. 1 REF.Article

PERIODIC PAIR-CURRENT MODULATION IN JOSEPHSON JUNCTIONSSEIFERT H.1979; J. LOW TEMP. PHYS.; ISSN 0022-2291; USA; DA. 1979; VOL. 37; NO 5-6; PP. 595-605; BIBL. 20 REF.Article

ETUDE DE LA STRUCTURE SUBHARMONIQUE DES CARACTERISTIQUES V-A DES CONTACTS PONCTUELS SUPRACONDUCTEURSBELENOV EH M; VEDENEEV SI; MOTULEVICH GP et al.1979; ZH. EKSPER. TEOR. FIZ.; SUN; DA. 1979; VOL. 76; NO 2; PP. 791-799; ABS. ENG; BIBL. 7 REF.Article

A SIMPLIFIED APPROACH TO THE CURRENT-VOLTAGE CHARACTERISTICS OF THE P+NP+ DIODE BELOW REACH-THROUGHYU SY; THOMAS G.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 969-971; BIBL. 3 REF.Article

PROPRIETES D'UN CONTACT JOSEPHSON DANS UN SYSTEME EXTERNE LARGE BANDEZAVALEEV VP; LIKHAREV KK.1978; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1978; VOL. 23; NO 5; PP. 1061-1071; BIBL. 13 REF.Article

ETUDE DES PROPRIETES ELECTROPHYSIQUES DES COUCHES REACTIVES DE NITRURE DE GERMANIUMBAGRATISHVILI GD; DZHANELIDZE RB; MIKHELASHVILI VM et al.1977; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1977; NO 26; PP. 24-29; BIBL. 11 REF.Article

METHOD FOR PLASMAGENERATOR VOLT-AMPERE DEPENDENCE DETERMINATIONDUNDR J; VOGEL J.1982; ACTA TECHNICA CSAV (CESKOSL. AKAD. VED); ISSN 0001-7043; CSK; DA. 1982; VOL. 27; NO 4; PP. 449-469; BIBL. 14 REF.Article

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