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Results 1 to 25 of 1118

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Tailoring the Indium island sizes on the Silicon surface by controlling the deposition rate. Interplay between the size selectivity due to the quantum confinement effect and kinetic factorsGOURALNIK, A. S; IVANCHENKO, M. V.Solid state communications. 2014, Vol 177, pp 46-49, issn 0038-1098, 4 p.Article

Non-destructive analysis of silver selenide films obtained by Pulsed Laser Deposition (PLD) with Micro-XRFDARGEL, Rainer; AZEROUAL, Mohamed; MOGWITZ, Boris et al.Journal of materials science. 2007, Vol 42, Num 17, pp 7375-7380, issn 0022-2461, 6 p.Article

LES DÉPÔTS SOUS VIDE DANS LE DOMAINE DES MICROTECHNIQUES = Vacuum deposition in the field of microtechniquesRAUCH, J.-Y.Annales françaises des microtechniques et de chronométrie. 2007, Vol 77, Num 56, pp 71-95, issn 0294-1228, 25 p.Article

Temperature induced growth away from the (001) orientation in SrBi2Ta2O9 films deposited by PLDDE LA PAZ CRUZ-JAUREGUI, Ma; PORTELLES, J. J; SIQUEIROS, J. M et al.Journal of materials science. 2004, Vol 39, Num 8, pp 2937-2940, issn 0022-2461, 4 p.Article

Thiophene-fluorene oligomer films growth in ultra high vacuum for efficient energy transferPORZIO, W; GIOVANELLA, U; PASINI, M et al.Thin solid films. 2004, Vol 466, Num 1-2, pp 231-237, issn 0040-6090, 7 p.Article

Characterization of indium nitride films deposited by activated reactive evaporation processPATIL, Sheetal J; BODAS, Dhananjay S; MANDALE, A. B et al.Thin solid films. 2003, Vol 444, Num 1-2, pp 52-57, issn 0040-6090, 6 p.Article

Epitaxial growth of tungsten carbide films using C60 as carbon precursorPALMQUIST, J.-P; CZIGANY, Zs; HULTMAN, L et al.Journal of crystal growth. 2003, Vol 259, Num 1-2, pp 12-17, issn 0022-0248, 6 p.Article

Structural characteristics and mechanical properties of aluminium oxide thin films prepared by off-plane filtered cathodic vacuum arc systemZHAO, Z. W; TAY, B. K; SHEEJA, D et al.Surface & coatings technology. 2003, Vol 167, Num 2-3, pp 234-239, issn 0257-8972, 6 p.Conference Paper

Characterization of vacuum evaporated polycrystalline Cd0.96Zn0.04Te thin films by XRD, Raman scattering and spectroscopic ellipsometrySRIDHARAN, M; NARAYANDASS, Sa. K; MANGALARAJ, D et al.Crystal research and technology (1979). 2002, Vol 37, Num 9, pp 964-975, issn 0232-1300Article

Ge-doped SiO2 thin films produced by helicon activated reactive evaporationLI, W. T; BULLA, D. A. P; CHARLES, C et al.Thin solid films. 2002, Vol 419, Num 1-2, pp 82-87, issn 0040-6090Article

Preparation of single-crystal TlSe filmsISMAILOV, D. I; ALEKPEROV, E. Sh; ALIEV, F. I et al.Inorganic materials. 2002, Vol 38, Num 1, pp 1-2, issn 0020-1685Article

Growth behavior and microstructure of Co-Ge films prepared on GaAs substrate by high-temperature sequential depositionSHI, J; ISHII, D; HASHIMOTO, M et al.Journal of crystal growth. 2001, Vol 222, Num 1-2, pp 235-242, issn 0022-0248Article

Filtered arc deposition and implantation of aluminium nitrideMANOVA, D; HUBER, P; MÄNDL, S et al.Surface & coatings technology. 2001, Vol 142-44, pp 61-66, issn 0257-8972Conference Paper

Characterization of α-phase aluminum oxide films deposited by filtered vacuum arcYAMADA-TAKAMURA, Y; KOCH, F; MAIER, H et al.Surface & coatings technology. 2001, Vol 142-44, pp 260-264, issn 0257-8972Conference Paper

Thermodynamic stability and kinetics of Y-Ba-Cu-O film growth at high rates in atomic and molecular oxygenJO, W; PENG, L. S-J; WANG, W et al.Journal of crystal growth. 2001, Vol 225, Num 2-4, pp 183-189, issn 0022-0248Conference Paper

PTCDA film formation on Si(111):H-1 × 1 surface : total current spectroscopy monitoringMOROZOV, A. O; KAMPEN, T. U; ZAHN, D. R. T et al.Surface science. 2000, Vol 446, Num 3, pp 193-198, issn 0039-6028Article

Plasma deposition of polymer films on pmma powders using vacuum fluidisation techniquesCHITYALA, A; VAN OOIJ, W. J.Surface engineering. 2000, Vol 16, Num 4, pp 299-302, issn 0267-0844Article

Pulsed vacuum arc deposition of multilayers in the nanometer rangeCHUN, Sung-Yong; CHAYAHARA, Akiyoshi.Surface & coatings technology. 2000, Vol 132, Num 2-3, pp 217-221, issn 0257-8972Article

Thin film deposition and dry etching on large substrates for TFT-LCD Display manufacturingAING, Phannara; DRIESSEN, Jan; SCHMITT, Jacques et al.Le Vide (1995). 2000, Vol 55, Num 295, pp 21-29, issn 1266-0167Article

Coat flexible on the shop floorCSELLE, T; CURTINS, H; RECHBERGER, H et al.Le Vide (1995). 2000, Vol 55, Num 295, pp 48-53, issn 1266-0167Article

Spatial distribution of microdroplets generated in the cathode spots of vacuum arcsMIERNIK, K; WALKOWICZ, J.Surface & coatings technology. 2000, Vol 125, Num 1-3, pp 161-166, issn 0257-8972Conference Paper

Vacuum arc deposition of metal-ceramic coatings by means of a composite targetCHAPUSOT, V; BILLARD, A; FRANTZ, C et al.Le Vide (1995). 2000, Vol 55, Num 295, pp 235-237, issn 1266-0167, SUPConference Paper

ZnO film formation using a steered and shielded reactive vacuum arc depositionTAKIKAWA, Hirofumi; KIMURA, Keisaku; MIYANO, Ryuichi et al.Thin solid films. 2000, Vol 377-78, pp 74-80, issn 0040-6090Conference Paper

A scanning tunnelling microscopy view of the surfactant-assisted growth of iron on Cu(111)PASSEGGI, M. C. G. JR; PRIETO, J. E; MIRANDA, R et al.Surface science. 2000, Vol 462, Num 1-3, pp 45-54, issn 0039-6028Article

Atomic layer deposition of SiO2 at room temperature using NH3-catalyzed sequential surface reactionsKLAUS, J. W; GEORGE, S. M.Surface science. 2000, Vol 447, Num 1-3, pp 81-90, issn 0039-6028Article

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