AP-MOVPE of thin GaAs_1-xBi_x alloysFITOURI, H; MOUSSA, I; REBEY, A et al.Journal of crystal growth. 2006, Vol 295, Num 2, pp 114-118, issn 0022-0248, 5 p.Article

Atomic layer deposition of B₂O₃ thin films at room temperaturePUTKONEN, Matti; NIINISTÖ, Lauri.Thin solid films. 2006, Vol 514, Num 1-2, pp 145-149, issn 0040-6090, 5 p.Article

Exploiting volatile lead compounds as precursors for the atomic layer deposition of lead dioxide thin filmsHARJUOJA, Jenni; PUTKONEN, Matti; NIINISTÖ, Lauri et al.Thin solid films. 2006, Vol 497, Num 1-2, pp 77-82, issn 0040-6090, 6 p.Article

Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxySCHULZE, F; DADGAR, A; BLÄSING, J et al.Journal of crystal growth. 2006, Vol 289, Num 2, pp 485-488, issn 0022-0248, 4 p.Article

ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientationsGILABERT, U; HEREDIA, E; TRIGUBO, A. B et al.Journal of crystal growth. 2006, Vol 295, Num 1, pp 1-6, issn 0022-0248, 6 p.Article

Studies on MOVPE growth of GaP epitaxial layer on Si(001) substrate and effects of annealingDIXIT, V. K; GANGULI, Tapas; SHARMA, T. K et al.Journal of crystal growth. 2006, Vol 293, Num 1, pp 5-13, issn 0022-0248, 9 p.Article

Substrate related structural, electronic and electrochemical properties of evaporated CeO_x ion storage layersSIOKOU, A; NTAIS, S; DRACOPOULOS, V et al.Thin solid films. 2006, Vol 514, Num 1-2, pp 87-96, issn 0040-6090, 10 p.Article

Direct growth of high-quality thick CdTe epilayers on Si (211) substrates by metalorganic vapor phase epitaxy for nuclear radiation detection and imagingNIRAULA, M; YASUDA, K; OHNISHI, H et al.Journal of electronic materials. 2006, Vol 35, Num 6, pp 1257-1261, issn 0361-5235, 5 p.Conference Paper

Carbon nanotube graphoepitaxy : Highly oriented growth by faceted nanostepsISMACH, Ariel; KANTOROVICH, David; JOSELEVICH, Ernesto et al.Journal of the American Chemical Society. 2005, Vol 127, Num 33, pp 11554-11555, issn 0002-7863, 2 p.Article

A kinetic Monte Carlo simulation of film growth by physical vapor deposition on rotating substratesCHO, J; TERRY, S. G; LESAR, R et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2005, Vol 391, Num 1-2, pp 390-401, issn 0921-5093, 12 p.Article

InAs epitaxial lateral overgrowth of W masksWERNERSSON, Lars-Erik; LIND, Erik; LEMBKE, Jonas et al.Journal of crystal growth. 2005, Vol 280, Num 1-2, pp 81-86, issn 0022-0248, 6 p.Article

ALD of SiO₂ at room temperature using TEOS and H₂O with NH₃ as the catalystFERGUSON, J. D; SMITH, E. R; WEIMER, A. W et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 8, pp G528-G535, issn 0013-4651Article

Highly a-axis oriented γ-LiAlO₂ layer on a-plane sapphire fabricated by vapor transport equilibrationSHENGMING ZHOU; JUN XU; YIN HANG et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 7, pp R35-R37, issn 0031-8965Article

Investigations of morphology, purity and crystal defects of the InN pillar crystals prepared by means of halide chemical vapor deposition under atmospheric pressureTAKAHASHI, Naoyuki; NIWA, Arei; NAKAMURA, Takato et al.The Journal of physics and chemistry of solids. 2004, Vol 65, Num 7, pp 1259-1263, issn 0022-3697, 5 p.Article

Numerical study of AlGaN growth by MOVPE in an AIX200 RF horizontal reactorMESIC, E; MUKINOVIC, M; BRENNER, G et al.Computational materials science. 2004, Vol 31, Num 1-2, pp 42-56, issn 0927-0256, 15 p.Article

Spinel-type ZnSb₂O₄ nanowires and nanobelts synthesized by an indirect thermal evaporationZENG, D. W; XIE, C. S; DONG, M et al.Applied physics. A, Materials science & processing (Print). 2004, Vol 79, Num 8, pp 1865-1868, issn 0947-8396, 4 p.Article

Effect of substrate on the characteristics of manganese(IV) oxide thin films prepared by atomic layer depositionNILSEN, O; FOSS, S; FJELLVAG, H et al.Thin solid films. 2004, Vol 468, Num 1-2, pp 65-74, issn 0040-6090, 10 p.Article

Growth and characterization of AgIn₅S₈ and CuIn₅S₈ thin filmsMAKHOVA, Liudmila V; KONOVALOV, I; SZARGAN, R et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 2, pp 308-311, issn 0031-8965, 4 p.Conference Paper

Formation of nanoquasicrystalline Al-Cu-Fe coatings by EBPVD methodPOLISHCHUK, S. S; MOVCHAN, B. A; USTINOV, A. I et al.Ferroelectrics (Print). 2004, Vol 305, pp 249-252, issn 0015-0193, 4 p.Conference Paper

Effects of growth pressure on AlGaN and Mg-doped GaN grown using multiwafer metal organic vapor phase epitaxy systemTOKUNAGA, H; UBUKATA, A; YANO, Y et al.Journal of crystal growth. 2004, Vol 272, Num 1-4, pp 348-352, issn 0022-0248, 5 p.Conference Paper

The effect of group V precursor on selective area MOVPE of InP/GaAs-related materialsOH, Ho-Jin; SUGIYAMA, Masakazu; NAKANO, Yoshiaki et al.Journal of crystal growth. 2004, Vol 261, Num 2-3, pp 419-426, issn 0022-0248, 8 p.Conference Paper

Effect of synthesis conditions on the growth rate and structure of diamond filmsALEKSANDROV, V. D; SEL'SKAYA, I. V.Inorganic materials. 2003, Vol 39, Num 5, pp 455-458, issn 0020-1685, 4 p.Article

Effects of thermal annealing of thin Au film on Fe₄₀Ni₃₈Mo₄B₁₈SHARMA, S. K; ZAPOROJTCHENKO, V; ZEKONYTE, J et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2003, Vol 351, Num 1-2, pp 316-324, issn 0921-5093, 9 p.Article

Metalorganic vapor-phase epitaxy of GaN from trimethylgallium and tertiarybutylhydrazineYU JEN HSU; LU SHENG HONG; JING EN TSAY et al.Journal of crystal growth. 2003, Vol 252, Num 1-3, pp 144-151, issn 0022-0248, 8 p.Article

Preparation of germanium oxynitride films in ammoniaNAKHUTSRISHVILI, I. G; DZHISHIASHVILI, D. A; MKERVALISHVILI, Z. I et al.Inorganic materials. 2003, Vol 39, Num 8, pp 833-835, issn 0020-1685, 3 p.Article