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Measurement of the quasi-static C-V curves of an MIS structure in the presence of charge leakageMONDERER, B; LAKHANI, A. A.Solid-state electronics. 1985, Vol 28, Num 5, pp 447-451, issn 0038-1101Article

A simple method of modelling the C-V profiles of high-low junctions and heterojunctionsMISSOUS, M; RHODERICK, E. H.Solid-state electronics. 1985, Vol 28, Num 3, pp 233-237, issn 0038-1101Article

Capacitance-voltage measurements of Au-Ge-Sn structure at liquid nitrogen temperatureSERIN, N.Journal of Technical Physics. 1983, Vol 24, Num 1, pp 121-125, issn 0324-8313Article

CAPACITANCE-VOLTAGE CHARACTERISTICS OF AL/AL2O3/P-GAAS METAL-OXIDE-SEMICONDUCTOR DIODESHAYASHI H; KIKUCHI K; YAMAGUCHI T et al.1980; APPL. PHYS. LETTERS; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 4; PP. 404-406; BIBL. 23 REF.Article

Caractéristiques capacité-tension sous-linéaires des jonctions p-n abruptes asymétriquesKONSTANTINOV, O. V; MEZRIN, O. A; EGOROV, B. V et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 9, pp 1589-1596, issn 0015-3222Article

Numerical solution of Poisson's equation with application to C-V analysis of III-V heterojunction capacitorsGRAY, J. L; LUNDSTROM, M. S.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 10, pp 2102-2109, issn 0018-9383Article

Simple formulas for analysis of C-V characteristics of MIS capacitorJAKUBOWSKI, A; INIEWSKI, K.Solid-state electronics. 1983, Vol 26, Num 8, pp 755-756, issn 0038-1101Article

THE COMPLETE DOPING PROFILE USING MOS CV TECHNIQUESHI TRON LIN; REUTER J.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 343-351; BIBL. 21 REF.Article

Capacité négative d'un semiconducteur photosensibleALIMPIEV, V. N; GURAL'NIK, I. P.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 4, pp 676-679, issn 0015-3222Article

Effect of semiconductor thickness on capacitance-voltage characteristics of an MOS capacitorNAGAI, K; HAYASHI, Y.Japanese journal of applied physics. 1984, Vol 23, Num 12, pp 1659-1660, issn 0021-4922Article

Comment on engineered Schottky barrier diodes for the modification and control of Schottky barrier heights [J. Appl. Phys. 61, 5159 (1987)]HORVATH, Z. J.Journal of applied physics. 1988, Vol 64, Num 1, pp 443-444, issn 0021-8979Article

Determination of heterojunction band offsets by capacitance-voltage profiling through nonabrupt isotype heterojunctionsKROEMER, H.Applied physics letters. 1985, Vol 46, Num 5, pp 504-505, issn 0003-6951Article

Metal-oxide-semiconductor characteristics of chemical vapor deposited cubic-SiCSHIBAHARA, K; NISHINO, S; MATSUNAMI, H et al.Japanese journal of applied physics. 1984, Vol 23, Num 11, pp L862-L864, issn 0021-4922Article

Influence de la résistance série sur la caractéristique capacité tension d'une structure à barrière de surfaceGOL'DBERG, YU. A; IVANOVA, O. V; L'VOVA, T. V et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 6, pp 1068-1072, issn 0015-3222Article

C-V hysteresis in metal-oxide-semiconductor structures resulting from Pt doping of the gate oxideGOLJA, B; NASSIBIAN, A. G.Journal of applied physics. 1984, Vol 56, Num 10, pp 3014-3017, issn 0021-8979Article

The influence of defect surface layers on the capacitive properties of MOS structuresLITOVSKII, R. N; LYSENKO, V. S; NAZAROV, A. N et al.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp 699-707, issn 0031-8965Article

Interelectrode capacitance nonlinearities in vertical power DMOSFETsSHENAI, K.Electronics Letters. 1991, Vol 27, Num 3, pp 280-282, issn 0013-5194, 3 p.Article

EFFET DES ETATS LIMITROPHES SUR LES CARACTERISTIQUES ELECTROSTATIQUES DES STRUCTURES METAL-SEMICONDUCTEUR 1-DIELECTRIQUE-SEMICONDUCTEUR 2SYSOEV BI; BEZRYADIN NN; SYNOROV VF et al.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 4; PP. 355-361; BIBL. 8 REF.Article

VARICAP WITH STEPLIKE C-V CHARACTERISTICSPEYKOV PH.1978; C.R. ACAD. BULG. SCI.; BGR; DA. 1978; VOL. 31; NO 8; PP. 961-962; BIBL. 1 REF.Article

CAPACITANCE-VS-VOLTAGE CHARACTERISTICS OF ZNO VARISTORSMUKAE K; TSUDA K; NAGASAWA I et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 6; PP. 4475-4476; BIBL. 14 REF.Article

APPARENT THRESHOLD CHARACTERISTICS OF PRETILTED LIQUID CRYSTAL CELLS.SHIMODA S; MADA H; KOBAYASHI S et al.1978; JAP. J. APPL. PHYS.; JPN; DA. 1978; VOL. 17; NO 8; PP. 1359-1364; BIBL. 11 REF.Article

Capacitance-voltage characteristics of GaAs-AlAs heterostructuresWOODWARD, T. K; SCHLESINGER, T. E; MCGILL, T. C et al.Applied physics letters. 1985, Vol 47, Num 6, pp 631-633, issn 0003-6951Article

Double-resonance technique for C/V measurements of semiconductor devicesDE COGAN, D; ALANI, A.Electronics Letters. 1985, Vol 21, Num 24, pp 1153-1154, issn 0013-5194Article

Determination of impurity distribution in p-type Si epitaxial layers by C-V analysis of Sm on p-type Si Schottky diodesMIKI, K; YOSHIDA, N.Japanese journal of applied physics. 1984, Vol 23, Num 5, pp L336-L338, issn 0021-4922, 2Article

Effect of AC and DC voltage on dielectric properties of CeO2 filmsCHANDRA SHEKAR, M; HARI BABU, V.Crystal research and technology (1979). 1984, Vol 19, Num 12, pp 1649-1653, issn 0232-1300Article

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