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Results 1 to 25 of 19563

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Effets de commutation d'une tension dans les conducteurs, plongés dans un liquide cryogéniqueIVANCHENKO, YU. M; MIKHEENKO, P. N; YUZHELEVSKIJ, YA. I et al.Žurnal tehničeskoj fiziki. 1983, Vol 53, Num 8, pp 1608-1615, issn 0044-4642Article

To the theory of I―V characteristics of the superlatticesBOROVITSKAYA, E. S; GENKIN, V. M.Solid state communications. 1983, Vol 46, Num 10, pp 769-771, issn 0038-1098Article

AN INTENSE ELECTRON BEAM SOURCEYEHESKEL J; GAZIT D; AVIDA R et al.1983; JOURNAL OF PHYSICS D: APPLIED PHYSICS; ISSN 0022-3727; GBR; DA. 1983; VOL. 16; NO 4; PP. 499-504; BIBL. 5 REF.Article

A NEW MICROBRIDGE WITH AN IMPROVED I-V CURVEKOBAYASHI M; MUSHA T.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 2; PART. 1; PP. 258-263; BIBL. 5 REF.Article

Current-voltage characteristics of ideal silicon diodes in the range 300-400KCAPPELLETTI, P; CEROFOLINI, G. F; POLIGNANO, M. L et al.Journal of applied physics. 1985, Vol 57, Num 2, pp 646-647, issn 0021-8979Article

Tunnel diode theoryLANDSBERG, P. T; ABRAHAMS, M. S.Electronics Letters. 1985, Vol 21, Num 2, pp 59-60, issn 0013-5194Article

Arc électrique d'un plasmatron à deux jets dans un champ magnétique variablePOLYAKOV, S. P; LIVITAN, N. V.Inženerno-fizičeskij žurnal. 1984, Vol 46, Num 3, pp 476-480, issn 0021-0285Article

Caractéristique tension-courant généralisé des plasmatrons à vapeur tourbillonnaireMIKHAJLOV, B. I.Inženerno-fizičeskij žurnal. 1984, Vol 46, Num 2, pp 325-326, issn 0021-0285Article

Electrical properties of (p)Te-(p)Si isotype heterojunctionMANSINGH, A; GARG, A. K.Journal of applied physics. 1984, Vol 56, Num 8, pp 2315-2322, issn 0021-8979Article

Stimulation de la supraconductivité par un courant constant en un contact supraconducteur-métal normal-supraconducteurLEMPITSKIJ, S. V.ZETF. Pis′ma v redakciû. 1983, Vol 85, Num 3, pp 1072-1080, issn 0044-4510Article

Properties of variable-thickness NbN microbridgesSAITO, Y; HOSAKA, S; SUGANOMATA, S et al.Journal of low temperature physics. 1983, Vol 50, Num 3-4, pp 311-317, issn 0022-2291Article

Zero field steps in short Josephson-junctionTAKANAKA, K; NAGASHIMA, T.Solid state communications. 1983, Vol 48, Num 9, pp 839-840, issn 0038-1098Article

Current-voltage relationship for a neutral membraneSESHADRI, M. S.Berichte der Bunsengesellschaft für Physikalische Chemie. 1985, Vol 89, Num 1, pp 93-97, issn 0005-9021Article

Negative resistance of semiconductor heterojunction diodes owing to transmission resonanceZOHTA, Y.Journal of applied physics. 1985, Vol 57, Num 6, pp 2334-2336, issn 0021-8979Article

Cylindrical hollow-anode dischargeMILJEVIC, V. I.Journal of applied physics. 1985, Vol 57, Num 9, pp 4482-4484, issn 0021-8979Article

Caractéristiques énergétiques des décharges dans l'atmosphère entre un électrolyte et une anode en cuivreGAJSIN, F. M; GIZATULLINA, F. A; KAMALOV, R. R et al.Fizika i himiâ obrabotki materialov. 1985, Num 4, pp 58-64, issn 0015-3214Article

IV curves of long annular Josephson junctionsDAVIDSON, A; PEDERSEN, N. F.Applied physics letters. 1984, Vol 44, Num 4, pp 465-467, issn 0003-6951Article

Schottky barrier ideality, real and imaginedHENISCH, H. K; RAHIMI, S; MOREAU, Y et al.Solid-state electronics. 1984, Vol 27, Num 11, pp 1033-1034, issn 0038-1101Article

The current-voltage characteristic of magnetron sputtering systemsWESTWOOD, W. D; MANIV, S; SCANLON, P. J et al.Journal of applied physics. 1983, Vol 54, Num 12, pp 6841-6846, issn 0021-8979Article

Processus transitoires dans les structures MOS et leur relation avec l'instabilité des caractéristiques électriques des composantsAGAFONOV, A. I; PLOTNIKOV, A. F; SELEZNEV, V. N et al.Žurnal tehničeskoj fiziki. 1983, Vol 53, Num 6, pp 1089-1095, issn 0044-4642Article

Etude des caractéristiques courant-tension des structures de diodes à base de carbure de siliciumANIKIN, M. M; LEBEDEV, A. A; POPOV, I. V et al.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 5, pp 844-848, issn 0015-3222Article

Electric variation of the resistance of superconducting tunnel junctionsGUNDLACH, K. H; KONISHI, H.Applied physics letters. 1985, Vol 46, Num 4, pp 441-443, issn 0003-6951Article

Interpretation of C/V characteristics for heterojunctions and high-low junctionsRHODERICK, E. H.Electronics Letters. 1984, Vol 20, Num 21, pp 868-869, issn 0013-5194Article

Thermionic emission-diffusion theory of isotype heterojunctionsSCHUELKE, R. J; LUNDSTROM, M. S.Solid-state electronics. 1984, Vol 27, Num 12, pp 1111-1116, issn 0038-1101Article

Zero field steps in Josephson junctionsKAWAMOTO, H.Progress of theoretical physics. 1983, Vol 70, Num 5, pp 1171-1182, issn 0033-068XArticle

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