Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Voltage threshold")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 4396

  • Page / 176

Export

Selection :

  • and

Circuit techniques for subthreshold leakage avoidance, control, and toleranceBORKAR, Shekhar.International Electron Devices Meeting. 2004, pp 421-424, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Corona threshold voltage of negative DC surface dischargeSUGAWARA, N; HOKARI, K.Japanese journal of applied physics. 1983, Vol 22, Num 7, issn 0021-4922, 1225Article

A three-transistor threshold voltage model for halo processesRIOS, Rafael; SHIH, Wei-Kai; SHAH, Atul et al.IEDm : international electron devices meeting. 2002, pp 113-116, isbn 0-7803-7462-2, 4 p.Conference Paper

Understanding threshold voltage in undoped-body MOSFETs : An appraisal of various criteriaGARCIA SANCHEZ, F. J; ORTIZ-CONDE, A; MUCI, J et al.Microelectronics and reliability. 2006, Vol 46, Num 5-6, pp 731-742, issn 0026-2714, 12 p.Article

Improvement of field-effect transistor threshold voltage uniformity by using very low dislocation density liquid encapsulated Czochralski-grown GaAsYAMAZAKI, H; HONDA, T; ISHIDA, S et al.Applied physics letters. 1984, Vol 45, Num 10, pp 1109-1111, issn 0003-6951Article

Power consumption in reversible logic addressed by a ramp voltageDE VOS, Alexis; VAN RENTERGEM, Yvan.Lecture notes in computer science. 2005, pp 207-216, issn 0302-9743, isbn 3-540-29013-3, 10 p.Conference Paper

A study of aluminum gate La2O3 nmisfet with Post Metallization AnnealNG, Jin-Aun; OHMI, Shun-Ichiro; TSUTSUI, Kazuo et al.Proceedings - Electrochemical Society. 2004, pp 369-380, issn 0161-6374, isbn 1-56677-417-9, 12 p.Conference Paper

Threshold voltage model for short channel retrograde doped MOSFETsKRANTI, Abhinav; RASHMI; HALDAR, S et al.SPIE proceedings series. 2002, pp 672-676, isbn 0-8194-4500-2, 2VolConference Paper

Nanofabrication with a scanning tunneling microscopeYAU, S.-T; SALTZ, D; WRIEKAT, A et al.Journal of applied physics. 1991, Vol 69, Num 5, pp 2970-2974, issn 0021-8979Article

Thin-film electroluminescent devices with low operating voltage and high brightnessKOZAWAGUCHI, H; OHWAKI, J; TSUJIYAMA, B et al.Review of the electrical communication laboratories. 1984, Vol 32, Num 1, pp 71-77, issn 0029-067XArticle

Substrate effects on the threshold voltage of GaAs field-effect transistorsWINSTON, H. V; HUNTER, A. T; OLSEN, H. M et al.Applied physics letters. 1984, Vol 45, Num 4, pp 447-449, issn 0003-6951Article

Mechanism of EL2 effects on GaAs field-effect transistor threshold voltagesANHOLT, R; SIGMON, T. W.Journal of applied physics. 1987, Vol 62, Num 9, pp 3995-3997, issn 0021-8979Article

Shielding of backgating effects in GaAs integrated circuitsLEE, C. P; CHANG, M. F.IEEE electron device letters. 1985, Vol 6, Num 4, pp 169-171, issn 0741-3106Article

Two-dimensional analytical modeling of threshold voltages of short-channel MOSFET'sPOOLE, D. R; KWONG, D. L.IEEE electron device letters. 1984, Vol 5, Num 11, pp 443-446, issn 0741-3106Article

Extraction of MOSFET effective channel length and width based on the transconductance-to-current ratioCUNHA, A. I. A; SCHNEIDER, M. C; GALUP-MONTORO, C et al.Proceedings - Electrochemical Society. 2004, pp 33-38, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Unambiguous extraction of threshold voltage based on the ACM modelCUNHA, A. I. A; SCHNEIDER, M. C; GALUP-MONTORO, C et al.Proceedings - Electrochemical Society. 2004, pp 69-74, issn 0161-6374, isbn 1-56677-416-0, 6 p.Conference Paper

Threshold voltage and director reorientation for in-plane switching of nematic liquid crystalsRESHETNYAK, V; SHEVCHUK, O.SPIE proceedings series. 2002, pp 20-27, isbn 0-8194-4398-0Conference Paper

Analysis of abnormal Pch Vt distribution in wafer caused by implantorNISHIMURA, K; MAEDA, T; INOUE, T et al.IEEE international symposium on semiconductor manufacturing conference. 1999, pp 341-344, isbn 0-7803-5403-6Conference Paper

On the extraction of the threshold voltage of MOSFETsORTIZ-CONDE, A; GOUVEIA FERNANDES, E; LIOU, J. J et al.International conference on microelectronic. 1997, pp 285-288, isbn 0-7803-3664-X, 2VolConference Paper

Comments on «accurate determination of threshold voltage levels of a Schmitt Trigger»LAUER, H.-U.IEEE transactions on circuits and systems. 1987, Vol 34, Num 10, pp 1252-1253, issn 0098-4094Article

Correlation of threshold voltage of implanted field effect transistors and carbon in GaAs substratesCHEN, R. T; HOLMES, D. E; ASBECK, P. M et al.Applied physics letters. 1984, Vol 45, Num 4, pp 459-461, issn 0003-6951Article

A power-on-reset pulse generator referenced by threshold voltage without standby currentSONG, Choungki; KIM, Shiho.IEICE transactions on electronics. 2004, Vol 87, Num 9, pp 1646-1648, issn 0916-8524, 3 p.Article

A test circuit for measuring standard deviations of MOSFET channel conductance and threshold voltageTERADA, Kazuo; SUMIDA, Masaki.2002 international conference on microelectronic test structures. 2002, pp 61-66, isbn 0-7803-7464-9, 6 p.Conference Paper

Design of a SOI memory cellSTANOJEVIC, Z; IOANNOU, D. E; LONCAR, B et al.International conference on microelectronic. 1997, pp 297-300, isbn 0-7803-3664-X, 2VolConference Paper

Investigation of radiation sensitivity and post-irradiation thermal sensitivity of MOS transistorODALOVIC, M; VUCKOVIC, B; MANIC, I et al.International conference on microelectronic. 1997, pp 357-360, isbn 0-7803-3664-X, 2VolConference Paper

  • Page / 176