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A new integration-based procedure to separately extract series resistance and mobility degradation in MOSFETsMUCI, Juan; LUGO MUNOZ, Denise C; LATORRE REY, Alvaro D et al.Semiconductor science and technology. 2009, Vol 24, Num 10, issn 0268-1242, 105015.1-105015.6Article

Highly sensitive field effect charge sensor for direct detection of biomoleculesLIU, J; ZHOU, Z.Electronics Letters. 2008, Vol 44, Num 17, pp 1005-1006, issn 0013-5194, 2 p.Article

In-Plane Gate Transistors With a 40-μm-Wide Channel WidthCHUNG, Tung-Hsun; LIN, Wei-Hsun; CHAO, Yi-Kai et al.IEEE electron device letters. 2012, Vol 33, Num 8, pp 1129-1131, issn 0741-3106, 3 p.Article

An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 μm metal-oxide-semiconductor transistors by quasi-ballistic transport theoryLAU, W. S; PEIZHEN YANG; HO, V et al.Microelectronics and reliability. 2008, Vol 48, Num 10, pp 1641-1648, issn 0026-2714, 8 p.Article

Improvement of conversion efficiency for solar cell with metal―oxide-semiconductor diodeMATSUO, N; KOBAYASHI, T; HEYA, A et al.Electronics letters. 2013, Vol 49, Num 21, pp 1351-1353, issn 0013-5194, 3 p.Article

Subthreshold operation of Schottky barrier silicon nanowire FET for highly sensitive pH sensingYOO, S. K; AN, J. Y; YANG, S et al.Electronics letters. 2010, Vol 46, Num 21, pp 1450-1453, issn 0013-5194, 4 p.Article

Voltage-based fault path tracing by transistor operating point analysisSANADA, Masaru.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1533-1538, issn 0026-2714, 6 p.Conference Paper

Orbital photogalvanic effects in quantum-confined structuresKARCH, J; TARASENKO, S. A; OLBRICH, P et al.Journal of physics. Condensed matter (Print). 2010, Vol 22, Num 35, issn 0953-8984, 355307.1-355307.9Article

Collapse and revival of entanglement of two-qubit in superconducting quantum dot lattice with magnetic flux and inhomogeneous gate voltageSARKAR, Sujit.Physica. B, Condensed matter. 2013, Vol 414, pp 26-29, issn 0921-4526, 4 p.Article

Complementary Dual-Contact Switch Using Soft and Hard Contact Materials for Achieving Low Contact Resistance and High Reliability SimultaneouslySONG, Yong-Ha; KIM, Min-Wu; JEONG OEN LEE et al.Journal of microelectromechanical systems. 2013, Vol 22, Num 4, pp 846-854, issn 1057-7157, 9 p.Article

A differential smoothing technique for the extraction of MOSFET threshold voltage using extrapolation in the linear regionHONGGUAN YANG; INOKAWA, Hiroshi.Solid-state electronics. 2012, Vol 76, pp 5-7, issn 0038-1101, 3 p.Article

High efficiency class B GaN power amplifier with dynamic gate biasing for improved linearityMEDREL, P; RAMADAN, A; NEBUS, J. M et al.Electronics letters. 2012, Vol 48, Num 18, pp 1136-1137, issn 0013-5194, 2 p.Article

Temperature Dependence of Drain Current Mismatch in Nanoscale Uniaxial-Strained PMOSFETsKUO, Jack J.-Y; CHEN, William P.-N; PIN SU et al.IEEE electron device letters. 2011, Vol 32, Num 3, pp 240-242, issn 0741-3106, 3 p.Article

Concurrent PBTI and hot carrier degradation in n-channel MuGFETsSUENG MIN LEE; DONG HUN LEE; JAE KI LEE et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1544-1546, issn 0026-2714, 3 p.Conference Paper

Input common-mode adapter using multiple-input floating-gate devicesKIM, Y.-S; SOHN, K.-S; BAEK, K.-J et al.Electronics letters. 2010, Vol 46, Num 19, pp 1318-1319, issn 0013-5194, 2 p.Article

Bias-stress effect and recovery in organic field effect transistors: Proton migration mechanismSHARMA, A; MATHIJSSEN, Simon G. J; KEMERINK, M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7778, issn 0277-786X, isbn 978-0-8194-8274-7, 77780Q.1-77780Q.13Conference Paper

Abnormally high local electrical fluctuations in heavily pocket-implanted bulk long MOSFETCATHIGNOL, Augustin; BORDEZ, Samuel; CROS, Antoine et al.Solid-state electronics. 2009, Vol 53, Num 2, pp 127-133, issn 0038-1101, 7 p.Article

Degradation Mechanism of Poly-Si TFTs Dynamically Operated in OFF RegionTAI, Ya-Hsiang; HUANG, Shih-Che; CHEN, Po-Ting et al.IEEE electron device letters. 2009, Vol 30, Num 3, pp 231-233, issn 0741-3106, 3 p.Article

Control of Spin Precession in a Spin-Injected Field Effect TransistorHYUN CHEOL KOO; JAE HYUN KWON; EOM, Jonghwa et al.Science (Washington, D.C.). 2009, Vol 325, Num 5947, pp 1515-1518, issn 0036-8075, 4 p.Article

A new triode structure with a carbon nanotube cathodeYUNSONG DI; WEI LEI; XIAOBING ZHANG et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 11, pp 3079-3084, issn 0018-9383, 6 p.Article

A Complementary Dual-Contact MEMS Switch Using a Zipping TechniqueSONG, Yong-Ha; KIM, Min-Wu; SEO, Min-Ho et al.Journal of microelectromechanical systems. 2014, Vol 23, Num 3, pp 710-718, issn 1057-7157, 9 p.Article

Influence of the contact resistance effect on the output characteristics of pentacene-based organic thin film transistorsLIN, Yow-Jon; HUANG, Bo-Chieh.Microelectronic engineering. 2013, Vol 103, pp 76-78, issn 0167-9317, 3 p.Article

Modified Transmission Line Model for Bottom-Contact Organic TransistorsWEI WANG; LING LI; ZHUOYU JI et al.IEEE electron device letters. 2013, Vol 34, Num 10, pp 1301-1303, issn 0741-3106, 3 p.Article

Influence of Inversion Layer on Tunneling Field-Effect TransistorsLEE, Woojun; WOOYOUNG CHOI.IEEE electron device letters. 2011, Vol 32, Num 9, pp 1191-1193, issn 0741-3106, 3 p.Article

Drain voltage sweeping-induced degradation in n-type low-temperature polysilicon thin film transistorsDAPENG ZHOU; MINGXIANG WANG; HAN HAO et al.Semiconductor science and technology. 2010, Vol 25, Num 4, issn 0268-1242, 045022.1-045022.5Article

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