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DETECTION OF THE TRICUSPID LESION WITH THE ULTRASOUND CARDIOGRAM = DEPISTAGE D'UNE LESION TRICUSPIDIENNE PAR L'ECHOCARDIOGRAMMEWADA O.1972; JAP. CIRCUL. J.; JAP.; DA. 1972; VOL. 36; NO 11; PP. 1267-1268Serial Issue

Optoelectronic integration based on GaAs materialWADA, O.Optical and quantum electronics. 1988, Vol 20, Num 6, pp 441-474, issn 0306-8919Article

Eco-biotoxicologie des polluants chimiquesWADA, O.Eisei Kagaku. 1987, Vol 33, Num 5, pp 287-299, issn 0013-273XArticle

Thermal reaction of gold metallization on InP = Réaction thermique de la métallisation de l'or sur InPWADA, O.Journal of applied physics. 1985, Vol 57, Num 6, pp 1901-1909, issn 0021-8979Article

TRIPHENYLTIN FLUORIDE (TPTF) AS A DIABETOGENIC AGENT: TPTF INDUCES DIABETIC LIPEMIA BY INHIBITING INSULIN SECRETION FROM MORPHOLOGICALLY INTACT RABBIT B-CELLMANABE S; WADA O.1981; DIABETES (N.Y.); ISSN 0012-1797; USA; DA. 1981; VOL. 30; NO 12; PP. 1013-1021; BIBL. 49 REF.Article

LOW LEAKAGE NEARLY IDEAL SCHOTTKY BARRIERS TO N-INP.WADA O; MAJERFELD A.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 5; PP. 125-126; BIBL. 7 REF.Article

Optoelectronic integration supports optical systemsWADA, O.Laser focus (1983). 1990, Vol 26, Num 7, pp 157-165, issn 0740-2511, 4 p.Article

Ar ion-beam etching characteristics and damage production in InPWADA, O.Journal of physics. D, Applied physics (Print). 1984, Vol 17, Num 12, pp 2429-2437, issn 0022-3727Article

DEALKYLATION AND DISTRIBUTION OF TIN COMPOUNDSARAKAWA Y; WADA O; YU TH et al.1981; TOXICOL. APPL. PHARMACOL.; ISSN 0041-008X; USA; DA. 1981; VOL. 60; NO 1; PP. 1-7; BIBL. 14 REF.Article

DETERMINATION OF TRI-, DI-, AND MONOBUTYLTIN AND INORGANIC TIN IN BIOLOGICAL MATERIALS AND SOME ASPECTS OF THEIR METABOLISM IN RATSIWAI H; WADA O; ARAKAWA Y et al.1981; J. ANAL. TOXICOL.; ISSN 0146-4760; USA; DA. 1981; VOL. 5; NO 6; PP. 300-306; BIBL. 27 REF.Article

CONTROL OF ZN DOPING FOR GROWTH OF INP PN JUNCTION BY LIQUID PHASE EPITAXYWADA O; MAJERFELD A; ROBSON PN et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 10; PP. 2278-2284; BIBL. 28 REF.Article

INTERACTION OF DEEP-LEVEL TRAPS WITH THE LOWEST AND UPPER CONDUCTION MINIMA IN INPWADA O; MAJERFELD A; CHOUDHOURY ANMM et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 423-432; BIBL. 25 REF.Article

DEEP-LEVEL TRAPS AND THE CONDUCTION-BAND STRUCTURE OF INPMAJERFELD A; WADA O; CHOUDHURY ANMM et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 11; PP. 957-959; BIBL. 10 REF.Article

ELECTRIC-FIELD CONTROL IN PLANAR GUNN-EFFECT DEVICE WITH SCHOTTKY-BARRIER ANODE.WADA O; YANAGISAWA S; TAKANASHI H et al.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 13; PP. 319-321; BIBL. 13 REF.Article

PROCESS FOR GA AS MONOLITHIC INTEGRATION APPLIED TO GUNN-EFFECT CIRCUITS.WADA O; YANAGISAWA S; TAKANASHI H et al.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 10; PP. 1546-1551; BIBL. 22 REF.Article

BAND-GAP ENHANCED CARRIER HEATING IN INGAASP/INP DOUBLE HETEROSTRUCTURE LIGHT-EMITTING DIODESWADA O; YAMAKOSHI S; SAKURAI T et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 10; PP. 981-983; BIBL. 23 REF.Article

A LOW-MOLECULAR-WEIGHT, CHROMIUM-BINDING SUBSTANCE IN MAMMALSYAMAMOTO A; WADA O; ONO T et al.1981; TOXICOL. APPL. PHARMACOL.; ISSN 0041-008X; USA; DA. 1981; VOL. 59; NO 3; PP. 515-523; BIBL. 22 REF.Article

FABRICATION OF PLANAR GUNN-EFFECT LOGIC DEVICE WITH SELF-ALIGNED SCHOTTKY-BARRIER GATES.WADA O; YANAGISAWA S; TAKANASHI H et al.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 9; PP. 215-217; BIBL. 6 REF.Article

TIME DEPENDENT POTENTIAL IN PLANAR GUNN-EFFECT DEVICE.WADA O; YANAGISAWA S; TAKANASHI H et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 6; PP. 1151-1152; BIBL. 9 REF.Article

CW PERFORMANCES OF PLANAR GRUNN-EFFECT DEVICESYANAGISAWA S; WADA O; TOYAMA Y et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 9; PP. 1313-1319; BIBL. 21 REF.Article

CURRENT SWITCHING OBSERVED IN PLANAR GUNN-EFFECT DEVICE WITH THIN ACTIVE LAYER.WADA O; YANAGISAWA S; TAKANASHI H et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 9; PP. 1827-1828; BIBL. 9 REF.Article

INTEGRATED GUNN-EFFECT LOGIC CIRCUITS FOR GIGABIT RATE OPERATION.YANAGISAWA S; WADA O; TOYAMA Y et al.1976; FUJITSU SCI. TECH. J.; JAP.; DA. 1976; VOL. 12; NO 4; PP. 129-142; BIBL. 1 P. 1/2Article

THERMAL REACTION OF TI EVAPORATED ON GAAS.WADA O; YANAGISAWA S; TAKANASHI H et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 4; PP. 263-265; BIBL. 10 REF.Article

AMINO ACID INCORPORATION BY NUCLEAR MEMBRANE FRACTION OF RAT LIVER = INCORPORATION D'ACIDES AMINES PAR LA FRACTION DES MEMBRANES NUCLEAIRES DU FOIE DU RATONO H; ONO T; WADA O et al.1976; LIFE SCI.; G.B.; DA. 1976; VOL. 18; NO 2; PP. 215-221; BIBL. 17 REF.Article

GIGABIT RATE GUNN-EFFECT SHIFT REGISTER.YANAGISAWA S; WADA O; TAKANASHI H et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 317-319; BIBL. 4 REF.Conference Paper

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