RESULTATS D'EXPLOITATION DE POCHES A REVETEMENT BASIQUE POUR LE TRAITEMENT DE L'ACIERCOMES H; WAGEMANN H.1974; ; S.L.; DA. 1974; DE L'ALLEM.: STAHL UND EISEN, 25 AVRIL 1974; 94, NO 9, 386-390Miscellaneous

An exact calculation of the two-dimensional capacitance of a wire and a new approximation formulaRINGHANDT, A; WAGEMANN, H. G.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 5, pp 1028-1032, issn 0018-9383Article

Energetic distributions of interface states D_it(φ_S) of MOS transistors in extension of Kuhn's quasistatic C(V)-methodKRAUTSCHNEIDER, W; WAGEMANN, H. G.AEU. Archiv für Elektronik und Übertragungstechnik. 1983, Vol 37, Num 9-10, pp 293-298, issn 0001-1096Article

Evolutionsstrategie in der Halbleitertechnik für die Charakterisierung von MOS-Bauelementen = Evolution strategy in semiconductor technology for MOS device characterizationGRAF, J; WAGEMANN, H. G.Archiv für Elektrotechnik (Berlin). 1993, Vol 76, Num 2, pp 155-160, issn 0003-9039Article

Uncomplicated measurement procedure for current-voltage characteristics of photovoltaic generators at remote sitesKERN, R; WAGEMANN, H.-G.Energy conversion and management. 1987, Vol 27, Num 3, pp 301-302, issn 0196-8904Article

Determination of the volume diffusion length of minority carriers within the base region of mono-crystalline solar cells by means of transient measurementsKERN, R; WAGEMANN, H. G.Archiv für Elektrotechnik (Berlin). 1989, Vol 72, Num 2, pp 157-164, issn 0003-9039, 8 p.Article

Determination of diffusion length of solar cellsSCHEER, H. C; WAGEMANN, H.-G.Archiv für Elektrotechnik (Berlin). 1983, Vol 66, Num 5-6, pp 327-334, issn 0003-9039Article

Investigation and modeling of the surface mobility of MOSFET's from -25 to +150°CSOPPA, W. M; WAGEMANN, H.-G.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 7, pp 970-977, issn 0018-9383Article

Solar simulator measurement system for large-area solar cells at standard test conditionsBÖHM, M; SCHEER, H. C; WAGEMANN, H. G et al.Energy conversion and management. 1985, Vol 25, Num 1, pp 105-113, issn 0196-8904Article

Recombination at depletion, inversion and accumulation grain boundaries in silicon under optical illuminationBOHM, M; SCHEER, H; WAGEMANN, H. G et al.Photovoltaic solar energy conference. 5. 1984, pp 119-123Conference Paper

Characterization of hot carrier degradation within the gate oxide of short channel MOSFET'sMAHNKOPF, R; PRZYREMBEL, G; WAGEMANN, H. G et al.Archiv für Elektrotechnik (Berlin). 1991, Vol 74, Num 5, pp 379-387, issn 0003-9039, 9 p.Article

A two-dimensional model for polycrystalline silicon solar cellsBOHM, M; SCHEER, H. C; WAGEMANN, H.-G et al.Solar cells. 1984, Vol 13, Num 1, pp 29-41, issn 0379-6787Article

Growth mechanism of silicon deposited by atmospheric pressure chemical vapor deposition on different ceramic substratesVON EHRENWALL, B; BRAUN, A; WAGEMANN, H. G et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 1, pp 340-344, issn 0013-4651Article

Nonequilibrium behavior of depletion, inversion, and accumulation grain boundariesBÖHM, M; SCHEER, H. C; WAGEMANN, H.-G et al.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 10, pp 1440-1446, issn 0018-9383Article

An accurate MOS measurement procedure for work function difference in the Al/SiO₂/Si systemKRAUTSCHNEIDER, W. H; LASCHINSKI, J; SEIFERT, W et al.Solid-state electronics. 1986, Vol 29, Num 5, pp 571-578, issn 0038-1101Article

Characterization of grain boundaries in silicon solar cells. I: The measurement technique and its restrictions on evaluation accuracyBOHM, M; SCHEER, H. C; SEIFERT, W et al.Archiv für Elektrotechnik (Berlin). 1986, Vol 69, Num 6, pp 445-451, issn 0003-9039Article

Characterization of grain boundaries in silicon solar cells. II: Evaluation of the density of grain boundary statesBOHM, M; SCHEER, H. C; SEIFERT, W et al.Archiv für Elektrotechnik (Berlin). 1987, Vol 70, Num 1, pp 1-10, issn 0003-9039Article

On the BIas dependent spectral characteristics of a-Si:H solar cellsBRUNS, J; GALL, S; WAGEMANN, H. G et al.Journal of non-crystalline solids. 1991, Vol 137-38, pp 1193-1196, issn 0022-3093, 2Conference Paper

Bench apparatus and measurements of IR-LED device parameters and test resultsKLUWE, A; KOBAYASHI, N; SCHEER, H. C et al.Journal of physics. E. Scientific instruments. 1984, Vol 17, Num 5, pp 371-376, issn 0022-3735Article

Monolithic series-interconnection for a thin film silicon solar cellKERST, U; MÜLLER, B; NELL, M. E et al.Solar energy materials and solar cells. 2001, Vol 65, Num 1-4, pp 471-476, issn 0927-0248Conference Paper

Solar cells from thin silicon layers on Al₂O₃NELL, M. E; BRAUN, A; VON EHRENWALL, B et al.Solar energy materials and solar cells. 2001, Vol 69, Num 2, pp 115-121, issn 0927-0248Article

The inversion layer of subhalf-micrometer n- and p-channel MOSFET's in the temperature range 208-403 KWILDAU, H.-J; BERNT, H; FRIEDRICH, D et al.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 12, pp 2318-2325, issn 0018-9383Article

Thin silicon layers on Al₂O₃ for solar cellsNELL, M. E; BRAUN, A; VON EHRENWALL, B et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 69-70, pp 542-545, issn 0921-5107Conference Paper

Effect of surface topology of amorphous substrates on the growth mechanism and grain size of APCVD grown silicon for solar cellsKAUTZSCH, T; BRAUN, A; WAGEMANN, H.-G et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 73, Num 1-3, pp 208-211, issn 0921-5107Conference Paper