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PRECIPITATION-INDUCED CURRENTS AND GENERATION-RECOMBINATION CURRENTS IN INTENTIONALLY CONTAMINATED SILICON P+N JUNCTIONS.BUSTA HH; WAGGENER HA.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 9; PP. 1424-1429; BIBL. 15 REF.Article

THERMALLY ASSISTED FIELD EMISSION NEAR PRECIPITATES IN P-N JUNCTIONS.BUSTA HH; WAGGENER HA.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 10; PP. 4385-4388; BIBL. 7 REF.Article

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