ELECTRON MOBILITY AND THERMOELECTRIC POWER IN PURE MERCURY TELLURIDE.WALUKIEWICZ W.1976; J. PHYS. C; G.B.; DA. 1976; VOL. 9; NO 10; PP. 1945-1954; BIBL. 25 REF.Article

Acoustic-phonon scattering in modulation-doped heterostructuresWALUKIEWICZ, W.Physical review. B, Condensed matter. 1988, Vol 37, Num 14, pp 8530-8533, issn 0163-1829Article

Hole-scattering mechanisms in modulation-doped heterostructuresWALUKIEWICZ, W.Journal of applied physics. 1986, Vol 59, Num 10, pp 3577-3579, issn 0021-8979Article

THE LONGITUDINAL MAGNETOPHONON EFFECT IN SEMICONDUCTORS CONTAINING MAGNETIC IMPURITIES.KOSSUT J; WALUKIEWICZ W.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 18; NO 3; PP. 343-345; BIBL. 8 REF.Article

Amphoteric native defects in semiconductorsWALUKIEWICZ, W.Applied physics letters. 1989, Vol 54, Num 21, pp 2094-2096, issn 0003-6951Article

Mechanism of Fermi-level stabilization in semiconductorsWALUKIEWICZ, W.Physical review. B, Condensed matter. 1988, Vol 37, Num 9, pp 4760-4763, issn 0163-1829Article

Hole mobility in modulation-doped heterostructures: GaAs-AlGaAsWALUKIEWICZ, W.Physical review. B, Condensed matter. 1985, Vol 31, Num 8, pp 5557-5560, issn 0163-1829Article

SHALLOW-ACCEPTOR CONTRIBUTION TO THE NEAR-RESONANCE SPIN-FLIP RAMAN SCATTERING IN SEMICONDUCTORSWALUKIEWICZ W; AGGARWAL RL; STOELINGA JHM et al.1979; PHYS. REV., B; USA; DA. 1979; VOL. 19; NO 12; PP. 6350-6357; BIBL. 15 REF.Article

ELECTRON MOBILITY IN N-TYPE GAAS AT 77 K; DETERMINATION OF THE COMPENSATION RATIOWALUKIEWICZ W; LAGOWSKI J; GATOS HC et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 769-770; BIBL. 4 REF.Article

ELECTRON MOBILITY AND FREE-CARRIER ABSORPTION IN GAAS: DETERMINATION OF THE COMPENSATION RATIOWALUKIEWICZ W; LAGOWSKI L; JASTRZEBSKI L et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 899-909; BIBL. 38 REF.Article

Effect of scattering by native defects on electron mobility in modulation-doped heterostructuresWALUKIEWICZ, W; HALLER, E. E.Applied physics letters. 1991, Vol 58, Num 15, pp 1638-1640, issn 0003-6951, 3 p.Article

MAGNETO-OPTICAL STUDY OF SHALLOW DONORS IN TRANSMUTATION-DOPED GAASSTOELINGA JHM; LARSEN DM; WALUKIEWICZ W et al.1978; J. PHYS. CHEM. SOLIDS; GBR; DA. 1978; VOL. 39; NO 8; PP. 873-877; BIBL. 16 REF.Article

The effects of synchrotron x-rays on the local structure and the recrystallization of ion damaged SiKIN MAN YU; WANG, L; WALUKIEWICZ, W et al.Semiconductor science and technology. 1997, Vol 12, Num 4, pp 460-463, issn 0268-1242Article

Deep-level defects in silicon and the band-edge hydrostatic deformation potentialsNOLTE, D. D; WALUKIEWICZ, W; HALLER, E. E et al.Physical review. B, Condensed matter. 1987, Vol 36, Num 17, pp 9392-9394, issn 0163-1829Article

Shallow donor associated with the main electron trap (EL2) in melt-grown GaAsWALUKIEWICZ, W; LAGOWSKI, J; GATOS, H. C et al.Applied physics letters. 1983, Vol 43, Num 1, pp 112-114, issn 0003-6951Article

Antiferromagnetic ordering of defects in GaAsBORNEMANN, H. J; WALUKIEWICZ, W; BLISS, D. E et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 15, pp 9849-9852, issn 0163-1829Article

ELECTRON MOBILITY AND FREE-CARRIER ABSORPTION IN INP; DETERMINATION OF THE COMPENSATION RATIOWALUKIEWICZ W; LAGOWSKI J; JASTRZEBSKI L et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 5; PP. 2659-2668; BIBL. 30 REF.Article

MAGNETIC-FIELD-INDUCED ENERGY GAP IN HGTE OBSERVED IN TRANSPORT MEASUREMENTS.BYSZEWSKI P; DZIUBA EZ; GALAZKA RR et al.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 71; NO 1; PP. 117-124; ABS. ALLEM.; BIBL. 10 REF.Article

ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORSLAGOWSKI J; GATOS HC; PARSEY JM et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 4; PP. 342-344; BIBL. 16 REF.Article

Critical criterion for axial models of defects in as-grown n-type GaAsNOLTE, D. D; WALUKIEWICZ, W; HALLER, E. E et al.Physical review. B, Condensed matter. 1987, Vol 36, Num 17, pp 9374-9377, issn 0163-1829Article

On the optical evaluation of the EL2 deep level concentration in semi-insulating GaAsWALUKIEWICZ, W; LAGOWSKI, J; GATOS, H. C et al.Applied physics letters. 1983, Vol 43, Num 2, pp 192-194, issn 0003-6951Article

Electron mobility limits in a two-dimensional electron gas: GaAs-GaAlAs heterostructuresWALUKIEWICZ, W; RUDA, H. E; LAGOWSKI, J et al.Physical review. B, Condensed matter. 1984, Vol 29, Num 8, pp 4818-4820, issn 0163-1829Article

Electrical and electrothermal transport in InN: The roles of defectsMILLER, N; AGER, J. W; SCHAFF, W. J et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4862-4865, issn 0921-4526, 4 p.Conference Paper

Effects of quantum confinement on the doping limit of semiconductor nanowiresKHANAL, D. R; YIM, Joanne W. L; WALUKIEWICZ, W et al.Nano letters (Print). 2007, Vol 7, Num 5, pp 1186-1190, issn 1530-6984, 5 p.Article

TEM studies of as-grown, irradiated and annealed InN filmsLILIENTAL-WEBER, Z; JONES, R. E; VAN GENUCHTEN, H. C. M et al.Physica. B, Condensed matter. 2007, Vol 401-02, pp 646-649, issn 0921-4526, 4 p.Conference Paper