A NOTE ON IC-YIELD STATISTICSWARNER RM JR.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 11; PP. 1045-1047; BIBL. 17 REF.Article

ON NEUTRALITY AND EQUILIBRIUM IN SEMICONDUCTORSWARNER RM JR.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 2; PP. 215-216; BIBL. 9 REF.Article

APPLYING A COMPOSITE MODEL TO THE IC YIELD PROBLEM.WARNER RM JR.1974; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1974; VOL. 9; NO 3; PP. 86-95; BIBL. 14 REF.Article

AVALANCHE BREAKDOWN IN SILICON DIFFUSED JUNCTIONSWARNER RM JR.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 12; PP. 1303-1318; BIBL. 27 REF.Serial Issue

MODELING THE TRANSITION REGION OF A SYMMETRIC STEP JUNCTIONLEE K; WARNER RM JR.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 2; PP. 115-118; BIBL. 14 REF.Article

A NOTE ON BETA _UP AND BETA _DOWN IN I²L TRANSISTORSWISTED JM; WARNER RM JR.1982; SOLID STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 3; PP. 251-252; BIBL. 10 REF.Article

THE CONTOURED-OXIDE MONOLITHIC SERIES-ARRAY SOLAR BATTERYMURRAY EM; WARNER RM JR.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6352-6356; BIBL. 7 REF.Article

A GENERAL SOLUTION FOR STEP JUNCTIONS WITH INFINITE EXTRINSIC END REGIONS AT EQUILIBRIUMJINDAL RP; WARNER RM JR.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 3; PP. 348-351; BIBL. 2 REF.Article

REPLACING THE DEPLETION APPROXIMATIONWARNER RM JR; JINDAL RP.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 335-342; BIBL. 9 REF.Article

MODELING THE SPACE-CHARGE-LAYER BOUNDARY OF A FORWARD-BIASED JUNCTIONWARNER RM JR; LEE K.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 7; PP. 5304-5310; BIBL. 15 REF.Article

A BIPOLAR LOCK-LAYER TRANSISTOR.WARNER RM JR; GRUNG BL.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 4; PP. 323-325; BIBL. 3 REF.Article

A MONOLITHIC SERIES-ARRAYSOLAR-CELL SYSTEM.WARNER RM JR; MURRAY EM; SMITH WK et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 12; PP. 838-839; BIBL. 3 REF.Article

CHANNEL-COLLECTOR TRANSISTORSZIPPERIAN TE; WARNER RM JR; GRUNG BL et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 341-343; BIBL. 13 REF.Article

ELECTRON-VELOCITY SATURATION AT A BJT COLLECTOR JUNCTION UNDER LOW-LEVEL CONDITIONSWARNER RM JR; DONG HYUK JU; GRUNG BL et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 3; PP. 230-236; BIBL. 26 REF.Article

BETA MEASUREMENT AND BETA REQUIREMENT IN I²L GATESWISTED JM; WARNER RM JR; MURRAY EM et al.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 1; PP. 93-95; BIBL. 6 REF.Article