COMPARISON OF METHODS FOR DETECTING OUTLIERSMILO W; WASILEWSKI Z.1979; PUBL. ECONOMETR.; FRA; DA. 1979; VOL. 12; NO 2; PP. 43-53; BIBL. 10 REF.Article

The 15th International Conference on Molecular Beam Epitaxy (MBE-XV)WASILEWSKI, Z. R; BERESFORD, R.Journal of crystal growth. 2009, Vol 311, Num 7, issn 0022-0248, 639 p.Conference Proceedings

Magneto-optical studies of n-GaAs under high hydrostatic pressureWASILEWSKI, Z; STRADLING, R. A.Semiconductor science and technology. 1986, Vol 1, Num 4, pp 264-274, issn 0268-1242Article

Nitride-based laser diodes by plasma-assisted MBE-From violet to green emissionSKIERBISZEWSKI, C; WASILEWSKI, Z. R; GRZEGORY, I et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1632-1639, issn 0022-0248, 8 p.Conference Paper

Magneto-optical investigation of a deep centre in n-InSbWASILEWSKI, Z; STRADING, R. A; POROWSKI, S et al.Solid state communications. 1986, Vol 57, Num 2, pp 123-127, issn 0038-1098Article

Effective mass in the barriers of GaAs/AlAs resonant tunneling double barrier diodesLANDHEER, D; AERS, G. C; WASILEWSKI, Z. R et al.Superlattices and microstructures. 1992, Vol 11, Num 1, pp 55-59, issn 0749-6036Article

Comments on the identification of high-order spectral lines of donors in semiconductors in intermediate magnetic fieldsARMISTEAD, C. J; STRADLING, R. A; WASILEWSKI, Z et al.Semiconductor science and technology. 1989, Vol 4, Num 7, pp 557-564, issn 0268-1242, 8 p.Article

High pressure cell for magneto-optical experimentsWASILEWSKI, Z; POROWSKI, S; STRADLING, R. A et al.Journal of physics. E. Scientific instruments. 1986, Vol 19, Num 6, pp 480-482, issn 0022-3735Article

Molecular beam epitaxy in a high-volume GaAs fabROGERS, T. J.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1671-1675, issn 0022-0248, 5 p.Conference Paper

Improved growth uniformity in molecular-beam epitaxy : alternative strategiesAERS, G. C; WASILEWSKI, Z. R.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 2, pp 815-818, issn 0734-211XConference Paper

Measurements of intersubband photocurrents from quantum wells in asymmetrical-double-barrier structuresLIU, H. C; BUCHANAN, M; WASILEWSKI, Z. R et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 3, pp 1411-1414, issn 0163-1829Article

The growth of high electron mobility InAsSb for application to high electron-mobility transistorsLIAO, Chichih; CHENG, K. Y.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1976-1978, issn 0022-0248, 3 p.Conference Paper

High-resolution X-ray diffraction analysis of InGaAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxyMOZUME, T; GOZU, S.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1707-1710, issn 0022-0248, 4 p.Conference Paper

Real time extraction of quantum dot size from RHEED intensity profilesRAJAPAKSHA, C; FREUNDLICH, A.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1758-1760, issn 0022-0248, 3 p.Conference Paper

Experimental and theoretical electroabsorption in an InGaAs-GaAs strained-layer superlattice, and the performance of a wave-guide modulatorHUNT, N. E. J; JESSOP, P. E; WASILEWSKI, Z. R et al.Canadian journal of physics (Print). 1991, Vol 69, Num 3-4, pp 483-490, issn 0008-4204, 8 p.Conference Paper

Properties of very uniform In_xGa_1-xAs single crystals grown by liquid-phase electroepitaxyBRYSKIEWICZ, T; EDELMAN, P; WASILEWSKI, Z et al.Journal of applied physics. 1990, Vol 68, Num 6, pp 3018-3020, issn 0021-8979, 3 p.Article

Charge non-neutrality in the quantum well region of a GaAs-AlGaAs intersubband 9 μm detectorLIU, H. C; BUCHANAN, M; WASILEWSKI, Z. R et al.Applied physics letters. 1991, Vol 58, Num 10, pp 1059-1061, issn 0003-6951Article

Epitaxial films for Ge-Sb-Te phase change memorySHAYDUK, R; BRAUN, W.Journal of crystal growth. 2009, Vol 311, Num 7, pp 2215-2219, issn 0022-0248, 5 p.Conference Paper

Gallium-assisted deoxidation of patterned substrates for site-controlled growth of InAs quantum dotsATKINSON, P; SCHMIDT, O. G.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1815-1818, issn 0022-0248, 4 p.Conference Paper

High-frequency quantum-well infrared photodetectors measured by microwave-rectification techniqueLIU, H. C; LI, J; BUCHANAN, M et al.IEEE journal of quantum electronics. 1996, Vol 32, Num 6, pp 1024-1028, issn 0018-9197Article

Activation measurements of the fractional quantum Hall effect as a function of magnetic fieldSACHRAJDA, A; BOULET, R; WASILEWSKI, Z et al.Solid state communications. 1990, Vol 74, Num 9, pp 1021-1025, issn 0038-1098, 5 p.Article

Advances in quality and uniformity of (Al,Ga)N/GaN quantum wells grown by molecular beam epitaxy with plasma sourceNATALI, F; CORDIER, Y; CHAIX, C et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 2029-2032, issn 0022-0248, 4 p.Conference Paper

Al(In)As-(Ga)InAs strain-compensated active regions for injectorless quantum cascade lasersBOEHM, Gerhard; KATZ, Simeon; MEYER, Ralf et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1932-1934, issn 0022-0248, 3 p.Conference Paper

Chemical beam epitaxy of highly ordered network of tilted InP nanowires on siliconRADHAKRISHNAN, G; FREUNDLICH, A; FUHRMANN, B et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1855-1858, issn 0022-0248, 4 p.Conference Paper

Crystalline and electrical characteristics of C₆₀-doped GaAs filmsNISHINAGA, Jiro; TAKADA, Tomonori; HAYASHI, Takashi et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 2232-2235, issn 0022-0248, 4 p.Conference Paper