au.\*:("WATAKABE Y")
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CHROMIUM ETCHING CHARACTERISTICS USING A PLANAR TYPE PLASMA REACTORSAEKI H; WATAKABE Y; TOYODA H et al.1982; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 6; PP. 1049-1063; BIBL. 4 REF.Article
Dynamic thermal response of photomasks caused by excimer laser pulseCHIBA, A; WATAKABE, Y.Japanese journal of applied physics. 1994, Vol 33, Num 1A, pp 341-346, issn 0021-4922, 1Article
A DRY ETCHING TECHNIQUE USING ELECTRON BEAM RESIST-PBSYAMAZAKI T; WATAKABE Y; SUZUKI Y et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 8; PP. 1859-1861; BIBL. 2 REF.Article
High sensitivity, dry-etch-resistant negative EB resistSAEKI, H; SHIGETOMI, A; WATAKABE, Y et al.Journal of the Electrochemical Society. 1986, Vol 133, Num 6, pp 1236-1239, issn 0013-4651Article
STABLE PERFORMANCE NB VARIABLE THICKNESS MICROBRIDGE TYPE JOSEPHSON JUNCTIONS: A REPRODUCIBLE FABRICATION TECHNIQUEKODAMA JI; HONTSU S; HIRAI H et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 6; PP. 3295-3301; BIBL. 5 REF.Article
Characteristics of submicron patterns fabricated by gallium focused-ion-beam sputteringMORIMOTO, H; SASAKI, Y; WATAKABE, Y et al.Journal of applied physics. 1985, Vol 57, Num 1, pp 159-160, issn 0021-8979Article
Focused ion beam lithography and its application to submicron devicesMORIMOTO, H; SASAKI, Y; SAITOH, K et al.Microelectronic engineering. 1986, Vol 4, Num 3, pp 163-179, issn 0167-9317Article
Fabrication of ECL gate arrays on quick turn-around lineWATAKABE, Y; TSUKAMOTO, K; HARADA, H et al.I.E.E.E. transactions on electron devices. 1983, Vol ED 30, Num 10, pp 1239-1244, issn 0018-9383Article
Novel electron beam direct writing technique for the hole pattern of quarter-micron devicesFUJINO, T; ISHII, A; KAWAI, K et al.Japanese journal of applied physics. 1992, Vol 31, Num 12B, pp 4262-4267, issn 0021-4922, 1Article
Novel technique for phase-shifting-mask repair using focused-ion-beam etch-back processHOSONO, K; NAGAMURA, Y; KUSUNOSE, H et al.Japanese journal of applied physics. 1992, Vol 31, Num 12B, pp 4468-4473, issn 0021-4922, 1Article
A study of electron beam metrology using computer simulationTAKEUCHI, S; NAKAMURA, H; WATAKABE, Y et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 1, pp 73-78, issn 0734-211XArticle
Registration accuracy in focused-ion-beam lithography for the fabrication of a GaAs FET with a mushroom gateYASUOKA, A; HOSONO, K; MORIMOTO, H et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 10, pp 3030-3033, issn 0013-4651, 4 p.Article
Mark detection technology in electron-beam direct writingKASHIWAKI, T; MORIMOTO, H; TAKEUCHI, S et al.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 10, pp 1403-1407, issn 0018-9383Article
Fabrication of 0.25-μm patterns on a membrane substrate-based X-ray absorberFUJINO, T; HASHIMOTO, M; YOSHIOKA, N et al.Japanese journal of applied physics. 1991, Vol 30, Num 11B, pp 3058-3064, issn 0021-4922, 1Article
Electron beam direct writing technologies for 0.3-μm ULSI devicesMORIIZUMI, K; TAKEUCHI, S; FUJINO, T et al.Japanese journal of applied physics. 1990, Vol 29, Num 11, pp 2584-2589, issn 0021-4922, 1Article
Organotin-containing resists (TMAR) for X-ray lithographyTANAKA, Y; HORIBE, H; KUBOTA, S et al.Japanese journal of applied physics. 1990, Vol 29, Num 11, pp 2638-2640, issn 0021-4922, 1Article
Chemical amplification electron beam positive resist process free from surface insoluble layerFUJINO, T; MAEDA, H; KUMADA, T et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 6, pp 2773-2778, issn 1071-1023Conference Paper