ZIRCONIUM FOR CHEMICAL PROCESSING APPLICATIONS.WEBSTER RT.1978; METAL PROGR.; U.S.A.; DA. 1978; VOL. 113; NO 2; PP. 62-64Article

PROGRAMMABLE SAW TRANSVERSAL FILTERSWEBSTER RT.1982; MICROWAVE J.; ISSN 0026-2897; USA; DA. 1982; VOL. 25; NO 5; PP. 139-148; 8 P.Article

ELECTRICAL PROPERTIES OF SEMI-CONDUCTOR-ELECTROLYTE (CDS-NICL₂) USING SURFACE ACOUSTIC WAVE TECHNIQUESDAS P; WEBSTER RT; DAVARI B et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 5; PP. 307-309; BIBL. 12 REF.Article

DETERMINATION OF SEMICONDUCTEUR SURFACE PROPERTIES USING SURFACE ACOUSTIC WAVES.DAS P; MOTAMEDI ME; WEBSTER RT et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 3; PP. 120-122; BIBL. 11 REF.Article

SEMICONDUCTOR SURFACE STUDY BY TRANSVERSE ACOUSTOELECTRIC VOLTAGE USING SURFACE ACOUSTIC WAVES.DAS P; MOTAMEDI ME; WEBSTER RT et al.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 2; PP. 121-123; BIBL. 13 REF.Article

SAW CHARACTERIZATION OF PHOTO-VOLTAIC SOLAR CELLSDAS P; WEBSTER RT; DAVARI B et al.1979; ELECTROCHEMICAL SOCIETY. MEETING. 155/1979/BOSTON MA; USA; PRINCETON: ELECTROCHEMICAL SOCIETY; DA. 1979; VOL. 1; PP. 199-200Conference Paper

UNTERSUCHUNG UEBER DAS KORROSIONSVERHALTEN VON ZIRKONIUMLEGIERUNGEN. IV. DAS LOCHFRASSVERHALTEN VON ZIRKONIUMLEGIERUNGEN. = ETUDE DU COMPORTEMENT A LA CORROSION DES ALLIAGES DE ZIRCONIUM. IV. COMPORTEMENT A LA CORROSION PAR PIQURE DES ALLIAGES DE ZIRCONIUMJANGG S; WEBSTER RT; SIMON M et al.1978; WERKST. U. KORROS.; DTSCH.; DA. 1978; VOL. 29; NO 1; PP. 16-26; ABS. ANGL.; BIBL. 40 REF.Article

DETERMINATION OF ELECTRICAL SURFACE PROPERTIES OF SI, GAAS, AND CDS USING ACOUSTIC SURFACE WAVE.DAS P; MOTAMEDI ME; GILBOA H et al.1976; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1976; VOL. 13; NO 4; PP. 948-953; BIBL. 15 REF.; (PHYS. COMPD. SEMICOND. INTERFACES. ANNU. CONF. 3. PROC.; SAN DIEGO, CALIF.; 1976)Conference Paper

CW ARGON LASER ANNEALING OF ANODIC OXIDE ON GAASCHAKRAVARTI SN; DAS P; WEBSTER RT et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 1132-1133; BIBL. 6 REF.Article

CONTACTLESS MONITORING OF IMPURITY ACTIVATION IN ION-IMPLANTED SILICON BY SURFACE ACOUSTIC WAVE TECHNIQUESVARAHRAMYAN K; WEBSTER RT; DAS P et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 2; PP. 1234-1237; BIBL. 8 REF.Article

TRANSVERSE-ACOUSTOELECTRIC-VOLTAGE (TAV) SPECTROSCOPY OF HIGH-RESISTIVITY GAASESTRADA VAZQUEZ H; WEBSTER RT; DAS P et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 4942-4950; BIBL. 23 REF.Article

STUDY OF THE SURFACE PROPERTIES OF THERMALLY OXIDIZED SILICON USING SURFACE ACOUSTIC WAVE ATTENUATIONWEBSTER RT; ESTRADA VAZQUEZ H; DAS P et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 6; PP. 541-548; BIBL. 15 REF.Article

POISSON'S RATION IN ZIRCALOY-4 BETWEEN 24 AND 316 C.SCHWENK EB; WHEELER WR; SHEARER GD et al.1978; J. MATER. NUCL.; PAYS-BAS; DA. 1978; VOL. 73; NO 1; PP. 129-131; BIBL. 2 REF.Article