Surface transient effects in ultralow-energy O₂+ sputtering of siliconCHANBASHA, A. R; WEE, A. T. S.Surface and interface analysis. 2005, Vol 37, Num 7, pp 628-632, issn 0142-2421, 5 p.Article

Surface chemical states on LPCVD-grown 4H-SiC epilayersWEE, A. T. S; LI, K; TIN, C. C et al.Applied surface science. 1998, Vol 126, Num 1-2, pp 34-42, issn 0169-4332Article

6H-SiC(0 0 0 1) phase transition: evolution of the (6 x 6) magic clustersTOK, E. S; ONG, W. J; WEE, A. T. S et al.Surface science. 2004, Vol 558, Num 1-3, pp 145-158, issn 0039-6028, 14 p.Article

Miscibility and interactions in poly(N-acryloylthiomorpholine)/ poly(p-vinylphenol) blendsJUZHEN YI; GOH, S. H; WEE, A. T. S et al.Macromolecules. 2001, Vol 34, Num 13, pp 4662-4665, issn 0024-9297Article

Impact of Fluorination on Initial Growth and Stability of Pentacene on Cu(111)GLOWATZKI, H; HEIMEL, G; VOLLMER, A et al.Journal of physical chemistry. C. 2012, Vol 116, Num 14, pp 7726-7734, issn 1932-7447, 9 p.Article

Characterizations of In_zGa_1-zAs_1-x-yN_xSb_y P-i-N structures grown on gaas by molecular beam epitaxyCHEAH, W. K; FAN, W. J; TAN, K. H et al.Journal of materials science. Materials in electronics. 2005, Vol 16, Num 5, pp 301-307, issn 0957-4522, 7 p.Article

Reactive Co magic cluster formation on Si(111)-(7×7)ZILANI, M. A. K; SUN, Y. Y; XU, H et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 19, pp 193402.1-193402.4, issn 1098-0121Article

Surfactant and impurity properties of antimony on gaas and GaAs_1-xN_x on GaAs [100] by solid source molecular beam epitaxyCHEAH, W. K; FAN, W. J; YOON, S. F et al.Thin solid films. 2005, Vol 488, Num 1-2, pp 56-61, issn 0040-6090, 6 p.Article

Co-doping carbon tetrabromide (CBr₄) and antimony (Sb) on GaAs [100] in solid source molecular beam epitaxyCHEAH, W. K; FAN, W. J; YOON, S. F et al.Journal of crystal growth. 2004, Vol 267, Num 1-2, pp 364-371, issn 0022-0248, 8 p.Article

Multilayer relaxations of (3 11), (3 31) and (210) fcc transition metal surfaces studied by pseudopotential DFT calculationsSUN, Y. Y; XU, H; FENG, Y. P et al.Surface science. 2004, Vol 548, Num 1-3, pp 309-316, issn 0039-6028, 8 p.Article

Effect of parylene layer on the performance of OLEDKE, Lin; RAMADAS SENTHIL KUMAR; ZHANG, Keran et al.Microelectronics journal. 2004, Vol 35, Num 4, pp 325-328, issn 0959-8324, 4 p.Conference Paper

Dynamics and surface segregation during GSMBE of Si_1-yC_y and Si_1-x-yGe_xC_y on the Si(001) surface ^'PRICE, R. W; TOK, E. S; LIU, R et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 676-680, issn 0022-0248, 5 p.Conference Paper

SIMS backside depth profiling of ultra shallow implantsYEO, K. L; WEE, A. T. S; SEE, A et al.Applied surface science. 2003, Vol 203-04, pp 335-338, issn 0169-4332, 4 p.Conference Paper

On STM imaging of GaAs(001)-(n x 6) surface reconstructions: Does the (6 x 6) structure exist?HAI XU; LI, Y. G; WEE, A. T. S et al.Surface science. 2002, Vol 513, Num 2, pp 249-255, issn 0039-6028Article

Miscibility and interactions in Poly(methylthiomethyl methacrylate)/ poly(p-vinylphenol) blendsJUZHEN YI; GOH, S. H; WEE, A. T. S et al.Macromolecules. 2001, Vol 34, Num 21, pp 7411-7415, issn 0024-9297Article

Tungsten-carbon thin films deposited using screen grid technique in an electron cyclotron resonance chemical vapour deposition systemRUSLI; YOON, S. F; HUAN, A. C. H et al.Surface & coatings technology. 2000, Vol 123, Num 2-3, pp 134-139, issn 0257-8972Article

Scanning tunnelling microscopy study of palladium on stepped Cu(210) surfaces : chemical contrast and room-temperature tip-induced motionWEE, A. T. S; DIXON, R. A; EGDELL, R. G et al.Surface science. 1999, Vol 442, Num 1, pp 55-64, issn 0039-6028Article

Compositional and morphological analysis of In_xGa_1-xN/GaN epilayersLI, K; WEE, A. T. S; LIN, J et al.Surface and interface analysis. 1999, Vol 28, Num 1, pp 181-185, issn 0142-2421Conference Paper

Indium-doped zinc oxide films prepared by simultaneous r.f. and d.c. magnetron sputteringKERAN ZHANG; FURONG ZHU; HUAN, C. H. A et al.Surface and interface analysis. 1999, Vol 28, Num 1, pp 271-274, issn 0142-2421Conference Paper

Structure and dynamic behaviour of atoms and molecules at catalyst model surfacesSUZUKI, S; FUKUI, K.-I; ONISHI, H et al.Surface and interface analysis. 1999, Vol 28, Num 1, pp 135-141, issn 0142-2421Conference Paper

Studies on interfacial chemistry of polypropylene/aluminium hydroxide compositesDIANSHENG REN; JIANQI WANG.Surface and interface analysis. 1999, Vol 28, Num 1, pp 170-172, issn 0142-2421Conference Paper

Tensor LEED analysis for the Ni(111)-(√7 × √7)R19.1°-P surface structure : Comparison with other √7 systemsSAIDY, M; ZHOU, M. Y; MITCHELL, K. A. R et al.Surface and interface analysis. 1999, Vol 28, Num 1, pp 84-91, issn 0142-2421Conference Paper

Tribological and optical properties of hydrogen-free amorphous carbon films with varying sp³/sp² compositionTAY, B. K; SHI, X; LIU, E et al.Surface and interface analysis. 1999, Vol 28, Num 1, pp 226-230, issn 0142-2421Conference Paper

Surface and interface analysis of GaSb/GaAs semiconductor materialsLI, K; LIN, J; WEE, A. T. S et al.Applied surface science. 1996, Vol 99, Num 1, pp 59-66, issn 0169-4332Article

Surface and interface studies of titanium silicide formationWEE, A. T. S; HUAN, A. C. H; OSIPOWICZ, T et al.Thin solid films. 1996, Vol 283, Num 1-2, pp 130-134, issn 0040-6090Article