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ADVANCES IN GAAS LSI/VLSI PROCESSING TECHNOLOGYWELCH BM.1980; SOLID STATE TECHNOL.; USA; DA. 1980; VOL. 23; NO 2; PP. 95-101; BIBL. 18 REF.Article

GAAS MESFET'S WITH PARTIAL P-TYPE DRAIN REGIONSLEE CP; WELCH BM.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 200-202; BIBL. 11 REF.Article

TELLURIUM-IMPLANTED N+ LAYERS IN GAAS.PASHLEY RD; WELCH BM.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 11; PP. 977-981; BIBL. 19 REF.Article

CARRIER INJECTION AND BACKGATING EFFECT IN GAAS MESFET'SLEE CP; LEE SJ; WELCH BM et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 4; PP. 97-98; BIBL. 12 REF.Article

GALLIUM ARSENIDE FIELD-EFFECT TRANSISTORS BY ION IMPLANTATION.WELCH BM; EISEN FH; HIGGINS JA et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 8; PP. 3685-3687; BIBL. 13 REF.Article

RELIABILITY OF AUGE/PT AND AUGE/NI OHMIC CONTACTS ON GAASLEE CP; WELCH BM; FLEMING WP et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 12; PP. 407-408; BIBL. 4 REF.Article

RELIABILITY OF PULSED ELECTRON-BEAM-ALLOYED AUGE/PT OHMIC CONTACTS ON GAASLEE CP; WELCH BM; TANDON JL et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 7; PP. 556-558; BIBL. 7 REF.Article

PLANAR GAAS IC TECHNOLOGY: APPLICATIONS FOR DIGITAL LSIEDEN RC; WELCH BM; ZUCCA R et al.1978; I.E.E.E. J. SOLID STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 4; PP. 419-426; BIBL. 15 REF.Article

THE PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGICEDEN RC; WELCH BM; ZUCCA R et al.1979; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 2; PP. 221-239; BIBL. 35 REF.Article

SATURATED RESISTOR LOAD FOR GAAS INTEGRATED CIRCUITSCHIEN PING LEE; WELCH BM; ZUCCA R et al.1982; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 7; PP. 1103-1109; BIBL. 13 REF.Article

THE PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGICEDEN RC; WELCH BM; ZUCCA R et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 4; PP. 299-317; BIBL. 35 REF.Article

LSI PROCESSING TECHNOLOGY FOR PLANAR GAAS INTEGRATED CIRCUITSWELCH BM; YIE DERSHEN; ZUCCA R et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 6; PP. 116-1124; BIBL. 15 REF.Article

MSI HIGH-SPEED LOW-POWER GAAS INTEGRATED CIRCUITS USING SCHOTTKY DIODE FET LOGICLONG SI; LEE FS; ZUCCA R et al.1980; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1980; VOL. 28; NO 5; PP. 466-472; BIBL. 4 REF.Article

PROCESS EVALUATION TEST STRUCTURES AND MEASUREMENT TECHNIQUES FOR A PLANAR GAAS DIGITAL IC TECHNOLOGYZUCCA R; WELCH BM; CHIEN PING LEE et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 12; PP. 2293-2295; BIBL. 16 REF.Article

PERFORMANCE OF SELENIUM-ION-IMPLANTED GAAS F.E.T.S.HIGGINS JA; WELCH BM; EISEN FH et al.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 18; PP. 462-464; BIBL. 5 REF.Article

PERFORMANCE OF SULPHUR-ION-IMPLANTED GAAS F.E.T.S.HIGGINS JA; WELCH BM; EISEN FH et al.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 1; PP. 17-18; BIBL. 4 REF.Article

TELLURIUM IMPLANTATION IN GAAS.EISEN FH; WELCH BM; MULLER H et al.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 3; PP. 219-223; BIBL. 17 REF.Article

HIGH-SPEED GAAS SDFL DIVIDER CIRCUITWALTON ER JR; SHEN EK; LEE FS et al.1982; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 7; PP. 1116-1122; BIBL. 14 REF.Article

EFFECTS OF CR REDISTRIBUTION ON ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED SEMI-INSULATING GAASASBECK PM; TANDON J; WELCH BM et al.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 3; PP. 35-37; BIBL. 9 REF.Article

SELENIUM IMPLANTATION IN GAAS.GAMO K; INADA T; KREKELER S et al.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 3; PP. 213-217; BIBL. 22 REF.Article

HIGH SPEED GAAS INTEGRATED CIRCUITSLONG SI; WELCH BM; ZUCCA R et al.1982; PROC. IEEE; ISSN 0018-9219; USA; DA. 1982; VOL. 70; NO 1; PP. 35-45; BIBL. 38 REF.Article

A HIGH-SPEED LSI GAAS 8 X 8 BIT PARALLEL MULTIPLIERLEE FS; KAELIN GR; WELCH BM et al.1982; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 4; PP. 638-647; BIBL. 17 REF.Article

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