Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("WESCH, W")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 47

  • Page / 2
Export

Selection :

  • and

CALCULATION OF OPTICAL REFLECTION AND TRANSMISSION COEFFICIENT OF A MULTI-LAYER SYSTEMHEHL K; WESCH W.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 58; NO 1; PP. 181-188; ABS. GER; BIBL. 16 REF.Article

RADIATION DAMAGE AND NEAR EDGE OPTICAL PROPERTIES OF NITROGEN IMPLANTED GALLIUM ARSENIDE = STRAHLUNGSSCHAEDIGUNG UND OPTISCHE EIGENSCHAFTEN NAHE DER BANDKANTE VON STICKSTOFF-IMPLANTIERTEM GALLIUMARSENID = DETERIORATION PAR RAYONNEMENT ET PROPRIETES OPTIQUES PRES DE L'ARETE D'UNE BANDE D'ARSENIURE DE GALLIUM IMPLANTEE A L'AZOTEWESCH W; WILK E; HEHL K et al.1982; PHYS. STATUS SOLIDI (A), APPL. RES.; DDR; DA. 1982-03; VOL. 70; NO 1; PP. 243-248; BIBL. 16 REF.Article

RADIATION DAMAGE AND NEAR EDGE OPTICAL PROPERTIES OF NITROGEN IMPLANTED GALLIUM ARSENIDEWESCH W; WILK E; HEHL K et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 70; NO 1; PP. 243-248; ABS. GER; BIBL. 16 REF.Article

CORRELATION BETWEEN STRUCTURAL DEFECTS AND OPTICAL PROPERTIES IN ION-IMPLANTED SILICONWESCH W; GLASER E; GOETZ G et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 1; PP. 225-232; ABS. GER; BIBL. 17 REF.Article

INVESTIGATIONS OF RADIATION DAMAGE PRODUCTION IN ION IMPLANTED SILICONGLASER E; GOTZ G; SOBOLEV N et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 69; NO 2; PP. 603-614; ABS. GER; BIBL. 28 REF.Article

INVESTIGATIONS OF RADIATION DAMAGE PRODUCTION IN ION IMPLANTED SILICONGLASER E; GOETZ G; SOBOLEV N et al.1982; PHYS. STATUS SOLIDI (A), APPL. RES.; DDR; DA. 1982-02; VOL. 69; NO 2; PP. 603-614; BIBL. 28 REF.Article

Investigation of Se+-implanted GaAs layers by temperature-dependent dechannelingBACHMANN, T; WESCH, W; GARTNER, K et al.Journal of applied physics. 1991, Vol 69, Num 12, pp 8072-8075, issn 0021-8979Article

Defect diffusion during ion implantation into GaAsWILK, E; WESCH, W; HEHL, K et al.Physica status solidi. A. Applied research. 1983, Vol 76, Num 2, pp K197-K201, issn 0031-8965Article

IONOMETRISCHE UND EPR-UNTERSUCHUNGEN AN IONENIMPLANTIERTEM SILIZIUM = ETUDE DU SILICIUM IMPLANTE PAR RETRODIFFUSION RUTHERFORD ET MESURES RPEGLASER E; GOETZ G; WESCH W et al.1980; EXP/TECH. PHYS.; ISSN 0014-4924; DDR; DA. 1980; VOL. 28; NO 4; PP. 331-340; ABS. ENG; BIBL. 29 REF.Article

Boundary effects on the plastic flow of amorphous layers during high-energy heavy-ion irradiationHEDLER, A; KLAUMÜNZER, S; WESCH, W et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 5, pp 054108.1-054108.12, issn 1098-0121Article

Defects in ion implanted and laser irradiated GaAsWESCH, W; GÄRTNER, K; WENDLER, E et al.Radiation effects. 1986, Vol 97, Num 3-4, pp 313-319, issn 0033-7579Article

Ohmic AuGe contacts on n-GaAs produced by nanosecond laser pulse irradiationSANDOW, E; WESCH, W; NEBAUER, E et al.Physica status solidi. A. Applied research. 1984, Vol 85, Num 2, pp K169-K173, issn 0031-8965Article

Ohmic AuGe contacts on n-GaAs produced by nanosecond laser pulse irradiation = Ohmsche AuGe-Kontakte auf n-GaAs, hergestellt durch Bestrahlung mit Nanosekunden-LaserimpulsenSANDOW, E; NEBAUER, E; WESCH, W et al.Physica status solidi. A. Applied research. 1984, Vol 85, Num 2, pp K169-K173, issn 0031-8965Article

Radiation damage and optical properties of Ar+-implanted GaPWENDLER, E; WESCH, W; GOTZ, G et al.Journal of applied physics. 1991, Vol 70, Num 1, pp 144-149, issn 0021-8979Article

Investigation of low-temperature epitaxial regrowth of ion-implanted amorphous GaAsHEROLD, J; BARTSCH, H; WESCH, W et al.Physica status solidi. A. Applied research. 1989, Vol 111, Num 1, pp 59-70, issn 0031-8965, 12 p.Article

Near-edge optical absorption behaviour in weakly damaged ion-implanted GaAsWENDLER, E; WESCH, W; GÖTZ, G et al.Physica status solidi. A. Applied research. 1986, Vol 93, Num 1, pp 207-212, issn 0031-8965Article

Sub-gap optical properties of amorphous InP produced by ion implantationWENDLER, E; MÜLLER, P; BACHMANN, T et al.Journal of non-crystalline solids. 1994, Vol 176, Num 1, pp 85-90, issn 0022-3093Article

RBS and ellipsometric investigation of amorphous GaAs layersWENDLER, E; KULIK, M; WESCH, W et al.Physica status solidi. A. Applied research. 1991, Vol 126, Num 2, pp K105-K108, issn 0031-8965Article

Defects in ion implanted and laser irradiated GaAsWESCH, W; GÄRTNER, K; WENDLER, E et al.Radiation effects. 1986, Vol 97, Num 3-4, pp 313-319, issn 0033-7579Article

Defect diffusion during ion implantation into GaAsWILK, E; WESCH, W; KEHL, K et al.Physica status solidi. A. Applied research. 1983, Vol 76, Num 2, pp K197-K201, issn 0031-8965Article

Quantum structures in SiCBECHSTEDT, F; FISSEL, A; FURTHMÜLLER, J et al.Applied surface science. 2003, Vol 212-13, pp 820-825, issn 0169-4332, 6 p.Conference Paper

Elastomer treatment by arc metal deposition assisted with self-ion irradiationTASHLYKOV, I. S; KASPEROVICH, V. I; SHADRUKHIN, M. G et al.Surface & coatings technology. 1999, Vol 116-19, pp 848-852, issn 0257-8972Conference Paper

Radiation damage formation and annealing in GaN and ZnOLORENZ, K; PERES, M; FRANCO, N et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7940, issn 0277-786X, isbn 978-0-8194-8477-2, 79400O.1-79400O.14Conference Paper

Ion-irradiation-induced preferential amorphization of Ge nanocrystals in silicaRIDGWAY, M. C; AZEVEDO, G. De M; ELLIMAN, R. G et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 9, pp 094107.1-094107.6, issn 1098-0121Article

Surface smoothing and patterning of SiC by focused ion beamsMENZEL, R; BACHMANN, T; MACHALETT, F et al.Applied surface science. 1998, Vol 136, Num 1-2, pp 1-7, issn 0169-4332Article

  • Page / 2