THE LIQUID SURFACE TENSION AS A FACTOR INFLUENCING THE VLS GROWTH OF SILICON CRYSTALS.WEYHER J.1975; MATER. SCI. ENGNG; NETHERL.; DA. 1975; VOL. 20; NO 2; PP. 171-177; BIBL. 17 REF.Article

STRUCTURE OF VLS SILICON CRYSTALS GROWN WITH PLATINUM AND GOLD.WEYHER J; SUROWIEC M.1978; J. CRYST. GROWTH; NETHERL.; DA. 1978; VOL. 43; NO 2; PP. 245-249; BIBL. 7 REF.Article

UNTERSUCHUNGEN ZU EINER NEUEN METHODE DER GASPHASENZUECHTUNG VON ALPHA -AL₂O₃-WHISKERN UND DEREN REALSTRUKTUR. = ETUDE D'UNE NOUVELLE METHODE D'OBTENTION EN PHASE GAZEUSE DE TRICHITES ALPHA -AL₂O₃ ET DE LEUR STRUCTURE REELLESZAJKO K; WASIAK J; WEYHER J et al.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO 10; PP. 1035-1043; ABS. ANGL.; BIBL. 26 REF.Article

Electron-beam-induced current and photoetching investigations of dislocations and impurity atmospheres in n-type liquid-encapsulated Czochralski GaAsFRIGERI, C; WEYHER, J. L.Journal of applied physics. 1989, Vol 65, Num 12, pp 4646-4653, issn 0021-8979, 8 p.Article

Selective etching and photoetching of {100} gallium arsenide in CrO₃-HF aqueous solutions. I: Influence of composition on etching behaviourWEYHER, J; VAN DE VEN, J.Journal of crystal growth. 1983, Vol 63, Num 2, pp 285-291, issn 0022-0248Article

On the absence of decoration As precipitates at dislocations in Te-doped GaAsFRIGERI, C; WEYHER, J. L; JIMENEZ, J et al.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 49, pp 10335-10342, issn 0953-8984Article

High resolution electron microscopy and etching study od twins in GaAsZANDBERGEN, H. W; WEYHER, J; VAN LANDUYT, J et al.Journal of crystal growth. 1987, Vol 84, Num 3, pp 476-482, issn 0022-0248Article

TEM study of the origin of the surface microroughness in DSL photoetched Si-implanted GaAs wafersFRIGERI, C; WEYHER, J. L; DE POTTER, M et al.Applied surface science. 1991, Vol 50, Num 1-4, pp 115-118, issn 0169-4332, 4 p.Conference Paper

Study of segregation inhomogeneities in GaAs by means of DSL photoetching and EBIC measurementsFRIGERI, C; WEYHER, J. L; ZANOTTI, L et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 1, pp 262-266, issn 0013-4651Article

Selective etching and photoetching of GaAs in CrO₃-HF aqueous solutions. III: Interpretation of defect-related etch figuresWEYHER, J. L; VAN DE VEN, J.Journal of crystal growth. 1986, Vol 78, Num 2, pp 191-217, issn 0022-0248Article

Revealing of defects in InP by shallow (submicron) photoetchingWEYHER, J. L; GILING, L. J.Journal of applied physics. 1985, Vol 58, Num 1, pp 219-222, issn 0021-8979Article

Selective etching and photoetching of {100} gallium arsenide in CrO₃-HF aqueous solutions. II: The nature of etch hillocksWEYHER, J; VAN ENCKEVORT, W. J. P.Journal of crystal growth. 1983, Vol 63, Num 2, pp 292-298, issn 0022-0248Article

Anodic etching of SiC in alkaline solutionsVAN DORP, D. H; WEYHER, J. L; KELLY, J. J et al.Journal of micromechanics and microengineering (Print). 2007, Vol 17, Num 4, issn 0960-1317, S50-S55Conference Paper

Chemical polishing of bulk and epitaxial GaNWEYHER, J. L; MÜLLER, S; GRZEGORY, I et al.Journal of crystal growth. 1997, Vol 182, Num 1-2, pp 17-22, issn 0022-0248Article

Study of decoration microdefects in LEC-grown Si-doped GaAs crystals by selective photoetching and laser scattering tomographyWEYHER, J. L; GALL, P; FRIGERIO, G et al.Journal of crystal growth. 1990, Vol 106, Num 2-3, pp 175-180, issn 0022-0248Article

Microdefects in sulphur doped GaAsPENNOCK, G. M; SCHAPINK, F. W; WEYHER, J. L et al.Journal of materials science letters. 1988, Vol 7, Num 4, pp 353-354, issn 0261-8028Article

Imaging extended non-homogeneities in HVPE grown GaN with Kelvin Probe Microscopy and photo-etchingNOWAK, G; WEYHER, J. L; KHACHAPURIDZE, A et al.Journal of crystal growth. 2012, Vol 353, Num 1, pp 68-71, issn 0022-0248, 4 p.Article

Defect-selective etching of SiCWEYHER, J. L; LAZAR, S; BORYSIUK, J et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 4, pp 578-583, issn 0031-8965, 6 p.Conference Paper

Analysis of large impurity atmospheres at dislocations and associated point defect reactions in differently n-doped GaAs crystalsFRIGERI, C; WEYHER, J. L; JIMENEZ, J et al.Journal de physique. III (Print). 1997, Vol 7, Num 12, pp 2339-2360, issn 1155-4320Conference Paper

Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor depositionMACHT, L; WEYHER, J. L; GRZEGORCZYK, A et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 7, pp 073309.1-073309.4, issn 1098-0121Article

Identification of individual and aligned microdefects in bulk vertical Bridgman- and liquid encapsulated Czochralski-grown GaAsWEYHER, J. L; SCHOBER, T; SONNENBERG, K et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1998, Vol 55, Num 1-2, pp 79-85, issn 0921-5107Article

Microstructure changes after annealing of undoped and Cr-doped liquid-encapsulated Czochralski-grown GaAsVISSER, E. P; WEYHER, J. L; GILING, L. J et al.Journal of applied physics. 1991, Vol 69, Num 8, pp 4234-4246, issn 0021-8979, 13 p., 1Article

The influence of free-carrier concentration on the PEC etching of GaN : A calibration with Raman spectroscopyLEWANDOWSKA, R; WEYHER, J. L; KELLY, J. J et al.Journal of crystal growth. 2007, Vol 307, Num 2, pp 298-301, issn 0022-0248, 4 p.Article

HBr-K₂Cr₂O₇-H₂O etching system for indium phosphideWEYHER, J. L; FORNARI, R; GÖRÖG, T et al.Journal of crystal growth. 1994, Vol 141, Num 1-2, pp 57-67, issn 0022-0248Article

Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVDGRZEGORCZYK, A. P; HAGEMAN, P. R; WEYHER, J. L et al.Journal of crystal growth. 2005, Vol 283, Num 1-2, pp 72-80, issn 0022-0248, 9 p.Article