Vanishing contact resistance on polycrystalline YBa₂Cu₃O_7-xWIECK, A. D.Applied physics letters. 1988, Vol 52, Num 12, pp 1017-1019, issn 0003-6951Article

Superconducting contacts on YBa₂Cu₃O_7-x in magnetic fieldsWIECK, A. D.Applied physics letters. 1988, Vol 53, Num 13, pp 1216-1218, issn 0003-6951Article

High transconductance in-plane-gated transistorsWIECK, A. D; PLOOG, K.Applied physics letters. 1992, Vol 61, Num 9, pp 1048-1050, issn 0003-6951Article

tunable in-plane-gated (IPG) quantum wire structures fabricated with directly written focused ion beamsWIECK, A. D; PLOOG, K.Surface science. 1990, Vol 229, Num 1-3, pp 252-255, issn 0039-6028, 4 p.Conference Paper

In-plane-gated quantum wire transistor fabricated with directly written focused ion beamsWIECK, A. D; PLOOG, K.Applied physics letters. 1990, Vol 56, Num 10, pp 928-930, issn 0003-6951Article

Low-temperature transport characteristics of AlGaAs-GaAs in-plane-gated wiresHIRAYAMA, Y; WIECK, A. D; PLOOG, K et al.Journal of applied physics. 1992, Vol 72, Num 7, pp 3022-3028, issn 0021-8979Article

Quantum ballistic transport in in-plane-gate transistors showing onset of a novel ferromagnetic phase transitionTSCHEUSCHNER, R. D; WIECK, A. D.Superlattices and microstructures. 1996, Vol 20, Num 4, pp 615-622, issn 0749-6036Article

Resonant interaction of optical phonons with two-dimensional electron and hole space-charge layers on siliconHEITMANN, D; BATKE, E; WIECK, A. D et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 10, pp 6865-6868, issn 0163-1829Article

Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100)YANG, J. L; REUTER, D; WIECK, A. D et al.Journal of crystal growth. 2006, Vol 293, Num 2, pp 278-284, issn 0022-0248, 7 p.Article

Proposal of novel electron wave coupled devicesTSUKADA, N; WIECK, A. D; PLOOG, K et al.Applied physics letters. 1990, Vol 56, Num 25, pp 2527-2529, issn 0003-6951Article

Reply to Comment on 'Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN' [Phys. Status Sohdi A 205, 1872 (2008)]KAMMERMEIER, T; NEY, A; WIECK, A. D et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 8, pp 1957-1959, issn 1862-6300, 3 p.Article

Observation of resonant photon drag in a two-dimensional electron gasWIECK, A. D; SIGG, H; PLOOG, K et al.Physical review letters. 1990, Vol 64, Num 4, pp 463-466, issn 0031-9007Article

Velocity modulation in focused-ion-beam written in-plane-gate transistorsBEVER, T; KLITZING, K. V; WIECK, A. D et al.Applied physics letters. 1993, Vol 63, Num 5, pp 642-644, issn 0003-6951Article

Two-dimensional plasmons in hole space charge layers on siliconBATKE, E; HEITMANN, D; WIECK, A. D et al.Solid state communications. 1983, Vol 46, Num 3, pp 269-271, issn 0038-1098Article

Comparison of bismuth emitting liquid metal ion sourcesBISCHOFF, L; PILZ, W; MAZAROV, P et al.Applied physics. A, Materials science & processing (Print). 2010, Vol 99, Num 1, pp 145-150, issn 0947-8396, 6 p.Article

Picosecond step-function response of in-plane gate transistorsKLINGENSTEIN, M; KUHL, J; PLOOG, K et al.Semiconductor science and technology. 1995, Vol 10, Num 8, pp 1156-1158, issn 0268-1242Article

Lateral tunneling in point contactsBEVER, T; WIECK, A. D; KLITZING, K et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 7, pp 3424-3427, issn 0163-1829Article

High frequency characteristics of in-plane-gate transistorsMCLEAN, J. S; WIECK, A. D; BLEDER, M et al.Applied physics letters. 1992, Vol 61, Num 11, pp 1324-1325, issn 0003-6951Article

Parallel excitation of hole and electron intersubband resonances in space-charge layers on siliconWIECK, A. D; BATKE, E; HEITMANN, D et al.Physical review. B, Condensed matter. 1984, Vol 30, Num 8, pp 4653-4663, issn 0163-1829Article

Optical beam-induced current in planar two-dimensional n-p-n devicesWERNER, C; REUTER, D; WIECK, A. D et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 508-511, issn 1386-9477, 4 p.Conference Paper

Layer-compensated selectively doped Al_xGa_1-xAs/GaAs heterostructures as a base material for nanolithographyREUTER, D; KÄHLER, D; KUNZE, U et al.Semiconductor science and technology. 2001, Vol 16, Num 7, pp 603-607, issn 0268-1242Article

Electrical properties of GaAs overgrown by molecular beam epitaxy on gallium ion implanted substratesISHIBASHI, T; FISCHER, A; WIECK, A. D et al.Japanese journal of applied physics. 1993, Vol 32, Num 5B, pp L742-L744, issn 0021-4922, 2Article

Focused-ion-beam defined and overgrown collector-up AlGaAs/GaAs heterojunction bipolar transistorsISHIBASHI, T; FISCHER, A; WIECK, A. D et al.Applied physics letters. 1993, Vol 62, Num 5, pp 513-515, issn 0003-6951Article

Lifting of the spin degeneracy of hole subbands in a surface electric field on siliconWIECK, A. D; BATKE, E; HEITMANN, D et al.Physical review letters. 1984, Vol 53, Num 5, pp 493-496, issn 0031-9007Article

Odd and even Kondo effects from emergent localization in quantum point contactsIQBAL, M. J; LEVY, Roi; VAN DER WAL, C. H et al.Nature (London). 2013, Vol 501, Num 7465, pp 79-83, issn 0028-0836, 5 p.Article