Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("WIGHT DR")

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 16 of 16

  • Page / 1
Export

Selection :

  • and

GREEN LUMINESCENCE EFFICIENCY IN GALLIUM PHOSPHIDE.WIGHT DR.1977; J. PHYS. D; G.B.; DA. 1977; VOL. 10; NO 4; PP. 431-454; BIBL. 1 P. 1/2Article

CONCENTRATION DEPENDENCE OF THE MINORITY CARRIER DIFFUSION LENGTH AND LIFETIME IN GAP.YOUNG ML; WIGHT DR.1974; J. PHYS. D; G.B.; DA. 1974; VOL. 7; NO 13; PP. 1824-1837; BIBL. 25 REF.Article

DEEP-STATE-CONTROLLED MINORITY-CARRIER LIFETIME IN N-TYPE GALLIUM PHOSPHIDEHAMILTON B; PEAKER AR; WIGHT DR et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 10; PP. 6373-6385; BIBL. 31 REF.Article

LIGHT GENERATION IN DIFFUSED GAP LIGHT EMITTING DIODES (LEDS)THOMAS BW; REES GJ; WIGHT DR et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 6; PP. 611-619; BIBL. 21 REF.Article

HIGH-EFFICIENCY BLUE LUMINESCENCE FROM MOCVD-GROWN ZNSE AT ROOM TEMPERATUREWIGHT DR; WRIGHT PJ; COCKAYNE B et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 14; PP. 593-595; BIBL. 6 REF.Article

PREPARATION AND PROPERTIES OF GAAS LAYERS FOR NOVEL F.E.T. STRUCTURESGRIFFITHS RJM; BLENKINSOP ID; WIGHT DR et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 20; PP. 629-630; BIBL. 11 REF.Article

INTERFACE-RECOMBINATION-CONTROLLED MINORITY-CARRIER LIFETIME IN N-TYPE GAP.BLENKINSOP ID; HARDING WR; WIGHT DR et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 1; PP. 14-16; BIBL. 4 REF.Article

NOVEL MICROWAVE GAAS FIELD-EFFECT TRANSISTORSVOKES JC; HUGHES BT; WIGHT DR et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 20; PP. 627-629; BIBL. 6 REF.Article

CEP5O14, A NEW ULTRAFAST SCINTILLATOR.BIMBERG D; ROBBINS DJ; WIGHT DR et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 2; PP. 67-68; BIBL. 4 REF.Article

DIFFUSION LENGTHS IN MU -TYPE MOCVD GAASWIGHT DR; OLIVER PE; PRENTICE T et al.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 55; NO 1; PP. 183-191; BIBL. 20 REF.Conference Paper

CARRIER RECOMBINATION AT DISLOCATIONS IN EPITAXIAL GALLIUM PHOSPHIDE LAYERS.TITCHMARSH JM; BOOKER GR; HARDING W et al.1977; J. MATER. SCI.; G.B.; DA. 1977; VOL. 12; NO 2; PP. 341-346; BIBL. 19 REF.Article

DEEP-LEVEL CONTROLLED LIFETIME AND LUMINESCENCE EFFICIENCY IN GAP.HAMILTON B; PEAKER AR; BRAMWELL S et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 12; PP. 702-704; BIBL. 8 REF.Article

DIFFUSION-LIMITED LIFETIME IN SEMICONDUCTORSWIGHT DR; BLENKINSOP ID; HARDING W et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 10; PP. 5495-5510; BIBL. 33 REF.Article

A DEEP CENTER ASSOCIATED WITH THE PRESENCE OF NITROGEN IN GAP.SMITH BL; HAYES TJ; PEAKER AR et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 3; PP. 122-124; BIBL. 13 REF.Article

OBSERVATION OF ELECTRON-HOLE LIQUID IN GAP.SHAH J; LEHENY RF; HARDING WR et al.1977; PHYS. REV. LETTERS; U.S.A.; DA. 1977; VOL. 38; NO 20; PP. 1164-1167; BIBL. 19 REF.Article

A TWO STAGE MODEL FOR DEEP LEVEL CAPTURE.GIBB RM; REES GJ; THOMAS BW et al.1977; PHILOS. MAG.; G.B.; DA. 1977; VOL. 36; NO 4; PP. 1021-1034; BIBL. 20 REF.Article

  • Page / 1