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Synthesis of thin silicon nanowires using gold-catalyzed chemical vapor depositionSHARMA, S; KAMINS, T. I; WILLIAMS, R. Stanley et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 6, pp 1225-1229, issn 0947-8396, 5 p.Article

Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal―oxide―metal memristorsSTRUKOV, Dmitri B; ALIBART, Fabien; WILLIAMS, R. Stanley et al.Applied physics. A, Materials science & processing (Print). 2012, Vol 107, Num 3, pp 509-518, issn 0947-8396, 10 p.Article

Exponential ionic drift : fast switching and low volatility of thin-film memristorsSTRUKOV, Dmitri B; WILLIAMS, R. Stanley.Applied physics. A, Materials science & processing (Print). 2009, Vol 94, Num 3, pp 515-519, issn 0947-8396, 5 p.Article

NanoelectronicsWANG, S.-Y; WILLIAMS, R. Stanley.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 6, issn 0947-8396, 258 p.Serial Issue

Effect of conductance variability on resistor-logic demultiplexers for nanoelectronicsKUEKES, Philip J; ROBINETT, Warren; WILLIAMS, R. Stanley et al.IEEE transactions on nanotechnology. 2006, Vol 5, Num 5, pp 446-454, issn 1536-125X, 9 p.Article

Computing with hysteretic resistor crossbarsSNIDER, G.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 6, pp 1165-1172, issn 0947-8396, 8 p.Article

Diameter control of Ti-catalyzed silicon nanowiresSHARMA, S; KAMINS, T. I; WILLIAMS, R. Stanley et al.Journal of crystal growth. 2004, Vol 267, Num 3-4, pp 613-618, issn 0022-0248, 6 p.Article

A novel interconnection technique for manufacturing nanowire devicesSAIFISLAM, M; SHARMA, S; KAMINS, T. I et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 6, pp 1133-1140, issn 0947-8396, 8 p.Article

Defect-tolerant demultiplexers for nano-electronics constructed from error-correcting codesKUEKES, P. J; ROBINETT, W; SEROUSSI, G et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 6, pp 1161-1164, issn 0947-8396, 4 p.Article

Silicon nanowires for sequence-specific DNA sensing: device fabrication and simulationLI, Z; RAJENDRAN, B; KAMINS, T. I et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 6, pp 1257-1263, issn 0947-8396, 7 p.Article

Scanned probe imaging of nanoscale conducting channels in Pt/alkanoic acid monolayer/Ti devicesLAU, C. N; STEWART, D. R; BOCKRATH, M et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 6, pp 1373-1378, issn 0947-8396, 6 p.Article

Annealing of chemically vapor deposited nanoscale Ti-Si islands on SiKAMINS, T. I; WILLIAMS, R. Stanley; OHLBERG, D. A. A et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 6, pp 1279-1286, issn 0947-8396, 8 p.Article

Optimization of in-vacuo template-stripped Pt surfaces via UHV STMOHLBERG, D; BLACKSTOCK, J. J; RAGAN, R et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 6, pp 1327-1334, issn 0947-8396, 8 p.Article

Nanoelectronic architecturesSNIDER, G; KUEKES, P; HOGG, T et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 6, pp 1183-1195, issn 0947-8396, 13 p.Article

Platinum passivation of self-assembled erbium disilicide nanowire arrays on Si(001)RAGAN, R; KIM, S; LI, X et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 6, pp 1339-1342, issn 0947-8396, 4 p.Article

Electrical characterization of Al/AlOx/molecule/Ti/Al devicesRICHTER, C. A; STEWART, D. R; OHLBERG, D. A. A et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 6, pp 1355-1362, issn 0947-8396, 8 p.Article

Selective surface functionalization of silicon nanowires via nanoscale joule heatingPARK, Inkyu; ZHIYONG LI; PISANO, Albert P et al.Nano letters (Print). 2007, Vol 7, Num 10, pp 3106-3111, issn 1530-6984, 6 p.Article

Chlorination of si surfaces with gaseous hydrogen chloride at elevated temperaturesZHIYONG LI; KAMINS, Theodore I; LI, Xuema et al.Surface science. 2004, Vol 554, Num 1, pp L81-L86, issn 0039-6028Article

Melamine Sensing in Milk Products by Using Surface Enhanced Raman ScatteringKIM, Ansoon; BARCELO, Steven J; WILLIAMS, R. Stanley et al.Analytical chemistry (Washington). 2012, Vol 84, Num 21, pp 9303-9309, issn 0003-2700, 7 p.Article

Growth and structure of chemically vapor deposited Ge nanowires on Si substratesKAMINS, T. I; LI, X; WILLIAMS, R. Stanley et al.Nano letters (Print). 2004, Vol 4, Num 3, pp 503-506, issn 1530-6984, 4 p.Article

Theory of electron current rectification, switching, and a role of defects in molecular devicesBRATKOVSKY, A. M.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 6, pp 1363-1372, issn 0947-8396, 10 p.Article

Intrinsic constrains on thermally-assisted memristive switchingSTRUKOV, Dmitri B; WILLIAMS, R. Stanley.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 4, pp 851-855, issn 0947-8396, 5 p.Article

Characterization of quantum conducting channels in metal/molecule/metal devices using pressure-modulated conductance microscopyFENG MIAO; OHLBERG, Douglas A. A; WILLIAMS, R. Stanley et al.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 4, pp 943-948, issn 0947-8396, 6 p.Article

'Memristive' switches enable 'stateful' logic operations via material implicationBORGHETTI, Julien; SNIDER, Gregory S; KUEKES, Philip J et al.Nature (London). 2010, Vol 464, Num 7290, pp 873-876, issn 0028-0836, 4 p.Article

Hybrid Nanoimprint―Soft Lithography with Sub-15 nm ResolutionZHIWEI LI; YANNI GU; LEI WANG et al.Nano letters (Print). 2009, Vol 9, Num 6, pp 2306-2310, issn 1530-6984, 5 p.Article

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